Fuji PowerMOSFET SuperFAP-G series Target Specification
PRELIMINARY
2SK3679-01MR (900V/1.58Ω/9A)
1) Package
TO-220F
2) Absolute Maximum Ratings (Tc=25℃ꢀunless otherwise specified)
Symbols
Ratings
Items
Units
VDS
ID
900
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
V
A
A
V
±9
ID(pulse)
VGS
±36
±30
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
IAR
9
A
EAS
287.7
mJ
*1
*2
20
5
95
dVDS/dt
dV/dt
PDꢀ＠Ｔc=25℃
PD @Ta=25℃
Tch
kV/us
kV/us
W
Peak Diode recovery dV/dt
Maximum Power Dissipation
2.16
W
150
Operating and Storage
Temperature range
℃
℃
Tstg
-55 ～+150
3)Electrical Characteristics (Tch=25℃ unless otherwise specified)
Items
Symbols
BVDSS
Test Conditions
min.
900
3.0
---
typ.
---
max. Units
ID=250uA
VGS=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
---
5.0
25
V
V
VGS(th)
ID=250uA
VDS=900V
VGS=0V
VDS=VGS
Tch=25℃
Tch=125℃
VDS=0V
---
---
μA
μA
nA
IDSS
Zero Gate Voltage Drain Current
---
---
250
100
IGSS
VGS=±30V
Gate-Source Leakage Current
---
---
R (on)
DS
ID=4.5A
Drain-Source On-State Resistance
VGS=10V
---
---
1.58
Ω
Ciss
Coss
Crss
Qg
Qgs
Qgd
IAV
VDS=25V
VGS=0V
Input Capacitance
---
---
---
---
---
---
12
1200
140
7
32
7
---
---
---
---
---
---
---
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
f=1MHz
Vcc=450V
ID=9A
nC
VGS=10V
7
L=6.51mH
Tch=25℃
---
A
V
VSD
IF=9A,VGS=0V,Tch=25℃
Diode Forward On-Voltage
---
1.0
1.5
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min.
typ.
max. Units
1.316
58.0
℃/W
℃/W
*1 L=6.51mH,Vcc=90V
*2 I -I ,-di/dt=50A/ s,Vcc BV ,Tch 150 C
≤
≤
µ
≤
°
F
D
DSS
NAME
APPROVED
DATE
Sep.-10-'02
Fuji Electric Co.,Ltd.
DRAWN
CHECKED Sep.-10-'02
MT5F12613 1/1
REVISIONS
MA4LE
