Fuji Power MOSFET SuperFAP-G series Target Specification
PRELIMINARY
2SK3683-01MR (500V/0.38 /19A)
Ω
TO-220F15R
1) Package
2) Absolute Maximum Ratings (Tc=25℃ꢀunless otherwise specified)
Symbols
Ratings
500
Items
Units
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
VDS
ID
ID(pulse)
VGS
V
A
A
V
±19
±76
±30
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
IAR
19
A
EAS
245.3
mJ
*1
kV/us
kV/us
W
W
℃
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
20
5
95
2.16
150
dVDS/dt
dV/dt
PDꢀ＠Ｔ
PD @Ta=25
Tch
Peak Diode recovery dV/dt
*2
c=25
℃
Maximum Power Dissipation
℃
Operating and Storage
Temperature range
-55
+150
Tstg
～
℃
3)Electrical Characteristics (Tch=25℃ unless otherwise specified)
Items
Symbols
BVDSS
Test Conditions
min.
typ.
---
---
---
---
max.
---
5.0
25
250
100
Units
V
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
ID=250uA
ID=250uA
VDS=500V
VGS=0V
VDS=VGS
T =25
500
3.0
---
---
---
V
GS(th)
A
A
A
℃
μ
μ
μ
ch
Zero Gate Voltage Drain Current
IDSS
V
GS=0V
T =125
℃
ch
Gate-Source Leakage Current
IGSS
VGS=±30V
VDS=0V
---
Drain-Source On-State Resistance
RDS(on)
ID=9.5A
VGS=10V
---
---
0.38
Ω
Input Capacitance
Output Capacitance
Ciss
Coss
VDS=25V
VGS=0V
---
---
1580
240
2370
360
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Crss
Qg
Qgs
f=1MHz
Vcc=250V
ID=19A
---
---
---
12
32
16
18
48
24
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
Qgd
IAV
VSD
V
GS=10V
---
19
---
12
---
1.0
18
---
1.5
L=1.25mH
I =19A,VGS=0V,Tch=25
F
Tch=25
A
V
℃
℃
4) Thermal Characteristics
Items
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min.
typ.
max.
1.316
58.0
Units
℃
Channel to Case
/W
Channel to Ambient
/W
℃
*1 L=1.25mH,Vcc=50V
*2 I -I ,-di/dt=50A/ s,Vcc BV ,Tch 150 C
≤
µ
≤
≤
°
F
D
DSS
NAME
APPROVED
DATE
Fuji Electric Co.,Ltd.
DRAWN
Sep.-02-'02
Sep.-02-'02
CHECKED
MT5F12582 1/1
REVISIONS
MA4LE
