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2SK3749

型号:

2SK3749

描述:

N沟道MOSFET的高速开关[ N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING ]

品牌:

NEC[ NEC ]

页数:

5 页

PDF大小:

104 K

DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3749  
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHIG  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
2.1 ꢀ.1  
1.25 ꢀ.1  
The 2SK3749 is an N-channel vertical MOS FET. Because  
it can be driven by a voltage as low as 2.5 V and it is not  
necessary to consider a drive current, this FET is ideal as an  
actuator for low-current portable systems such as headphone  
stereos and video cameras.  
2
1
3
FEATURES  
Marking  
Gate can be driven by 2.5 V  
Because of its high input impedance, there’s no need to  
consider drive current  
ORDERING INFORMATION  
1 : Source  
2 : Gate  
3 : Drain  
PART NUMBER  
PACKAGE  
2SK3749  
SC-70 (SSP)  
Marking: G27  
EQUIVALENT CIRCUIT  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT  
50  
±7.0  
±100  
±200  
150  
V
V
mA  
mA  
mW  
°C  
Drain  
Body  
Diode  
Drain Current (pulse) Note  
Total Power Dissipation  
Gate  
Channel Temperature  
Tch  
150  
Gate  
Storage Temperature  
Note PW 10 ms, Duty Cycle 50%  
Tstg  
55 to +150  
°C  
Protection  
Diode  
Source  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.  
When this device actually used, an additional protection circuit is externally required if a voltage exceeding  
the rated voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D17136EJ1V0DS00 (1st edition)  
Date Published April 2004 NS CP(K)  
Printed in Japan  
2004  
2SK3749  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
1.2  
MAX.  
1.0  
UNIT  
µA  
µA  
V
IDSS  
VDS = 50 V, VGS = 0 V  
IGSS  
VGS = 7.0 V, VDS = 0 V  
VDS = 3.0 V, ID = 1.0 µA  
VDS = 3.0 V, ID = 10 mA  
VGS = 2.5 V, ID = 10 mA  
VGS = 4.0 V, ID = 10 mA  
VDS = 3.0 V  
5.0  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
0.9  
20  
1.5  
Note  
Forward Transfer Admittance  
mS  
Note  
Drain to Source On-state Resistance  
20  
15  
40  
20  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
6.0  
8.0  
1.2  
9.0  
50  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Coss  
VGS = 0 V  
Crss  
f = 1 MHz  
td(on)  
VDD = 3.0 V, ID = 20 mA  
VGS = 3.0 V  
tr  
Turn-off Delay Time  
Fall Time  
td(off)  
RG = 10 Ω  
20  
tf  
40  
Note Pulsed: PW 350 µs, Duty Cycle 2%  
TEST CIRCUIT SWITCHING TIME  
D.U.T.  
V
GS  
RL  
9ꢀ%  
V
GS  
V
GS  
1ꢀ%  
Wave Form  
RG  
PG.  
V
DD  
9ꢀ%  
I
D
9ꢀ%  
1ꢀ%  
I
D
V
GS  
1ꢀ%  
I
D
Wave Form  
t
d(on)  
t
r
t
d(off)  
t
f
τ
t
on  
t
off  
µ
τ = 1  
s
Duty Cycle 1%  
2
Data Sheet D17136EJ1V0DS  
2SK3749  
TYPICAL CHARACTERISTICS (TA = 25°C)  
TOTAL POWER DISSIPATION vs.  
AMBIENT TEMPRATURE  
DRAIN CURRENT vs.  
DRAIN TO SOURCE VOLTAGE  
18ꢀ  
1ꢀꢀ  
8ꢀ  
6ꢀ  
4ꢀ  
2ꢀ  
15ꢀ  
12ꢀ  
9ꢀ  
6ꢀ  
3ꢀ  
3.ꢀ V  
4.ꢀ V  
3.5 V  
2.5 V  
V
GS = 2.ꢀ V  
3ꢀ  
9ꢀ  
12ꢀ  
15ꢀ  
18ꢀ  
1
2
3
4
5
6ꢀ  
T
A
- Ambient Temperature - ˚C  
VDS - Drain to Source Voltage - V  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
TRANSFER CHARACTERISTICS  
1ꢀꢀ  
1ꢀ  
1
1ꢀꢀ  
5ꢀ  
V
DS = 3.ꢀ V  
V
DS = 3.ꢀ V  
T
A
= –25˚C  
25˚C  
T
A
= 75˚C  
25˚C  
125˚C  
–25˚C  
ꢀ.1  
2ꢀ  
ꢀ.ꢀ1  
ꢀ.ꢀꢀ1  
1ꢀ  
1
2
3
1
2
5
1ꢀ  
2ꢀ  
5ꢀ  
1ꢀꢀ  
V
GS - Gate to Source Voltage - V  
I
D
- Drain Current - A  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. DRAIN CURRENT  
1ꢀꢀ  
5ꢀ  
1ꢀꢀ  
5ꢀ  
V
GS = 2.5 V  
VGS = 4.ꢀ V  
T
A
= 75˚C  
25˚C  
T
A
= 75˚C  
25˚C  
2ꢀ  
1ꢀ  
5
2ꢀ  
1ꢀ  
5
–25˚C  
–25˚C  
2
1
2
1
1
2
5
1ꢀ  
2ꢀ  
5ꢀ  
1ꢀꢀ  
1
2
5
1ꢀ  
2ꢀ  
5ꢀ  
1ꢀꢀ  
I
D
- Drain Current - mA  
I
D
- Drain Current - mA  
3
Data Sheet D17136EJ1V0DS  
2SK3749  
DRAIN TO SOURCE ON-STATE RESISTANCE  
vs. GATE TO SOURCE VOLTAGE  
CAPACITANCE vs. DRAIN TO  
SOURCE VOLTAGE  
3ꢀ  
2ꢀ  
1ꢀ  
1ꢀ  
5
Pulsed  
C
C
iss  
I
D
= 1 mA  
1ꢀ mA  
5ꢀ mA  
oss  
2
1
ꢀ.5  
C
rss  
ꢀ.2  
ꢀ.1  
V
GS = ꢀ V  
f = 1 MHz  
1
2
3
4
5
6
7
1
2
5
1ꢀ  
2ꢀ  
5ꢀ  
1ꢀꢀ  
V
GS - Gate to Source Voltage - V  
V
DS - Drain to Source Voltage - V  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
SWITCHING CHARACTERISTICS  
1ꢀꢀ  
1ꢀꢀ  
5ꢀ  
t
r
t
f
2ꢀ  
1ꢀ  
5
t
d(off)  
d(on)  
1ꢀ  
t
V
V
R
DD = 3.ꢀ V  
GS = 3.ꢀ V  
2
1
G
= 1ꢀ  
1
ꢀ.2  
ꢀ.4  
ꢀ.6  
ꢀ.8  
1.ꢀ  
2ꢀ  
5ꢀ  
1ꢀꢀ 2ꢀꢀ  
5ꢀꢀ 1ꢀꢀꢀ  
1ꢀ  
I
D
- Drain Current - mA  
VF(S-D) - Source to Drain Voltage - V  
4
Data Sheet D17136EJ1V0DS  
2SK3749  
The information in this document is current as of April, 2004. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or  
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all  
products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E ꢀ2. 11-1  
厂商 型号 描述 页数 下载

PANASONIC

2SK0065 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0065(2SK65) 小信号デバイス - 小信号FET - 接合形场效应管\n[ 小信号デバイス - 小信号FET - 接合形FET ] 3 页

ETC

2SK0065P 晶体管| JFET | N沟道| 12V V( BR ) DSS | 40uA的我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR ] 3 页

ETC

2SK0065Q 晶体管| JFET | N沟道| 12V V( BR ) DSS | 150UA我( DSS ) | SPAKVAR\n[ TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 150UA I(DSS) | SPAKVAR ] 3 页

PANASONIC

2SK0123 为在低频率阻抗变换[ For Impedance Conversion In Low Frequency ] 3 页

ETC

2SK0123(2SK123) 小信号器件 - 小信号场效应管 - 场效应管结\n[ Small-signal device - Small-signal FETs - Junction FETs ] 3 页

PANASONIC

2SK0198 对于低频放大[ For Low-Frequency Amplification ] 3 页

ETC

2SK0198(2SK198) 2SK0198 ( 2SK198 ) - N沟道结型场效应管\n[ 2SK0198 (2SK198) - N-Channel Junction FET ] 3 页

PANASONIC

2SK0198P [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

PANASONIC

2SK0198Q [ Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-236, ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN ] 3 页

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