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2SK3812

型号：

2SK3812

描述：

切换N沟道功率MOSFET[ SWITCHING N-CHANNEL POWER MOSFET ]

品牌：

NEC[ NEC ]

页数：

8 页

PDF大小：

142 K

下载PDF手册
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3812  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
ORDERING INFORMATION  
The 2SK3812 is N-channel MOS Field Effect Transistor  
PART NUMBER  
2SK3812-ZP  
PACKAGE  
designed for high current switching applications.  
TO-263 (MP-25ZP)  
FEATURES  
• Super low on-state resistance  
RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A)  
RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A)  
• High current rating: ID(DC) = ±110 A  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
(TO-263)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
60  
±20  
V
V
±110  
±440  
213  
A
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
W
W
°C  
°C  
mJ  
A
PT2  
1.5  
Tch  
150  
Storage Temperature  
Tstg  
−55 to +150  
397  
Single Avalanche Energy Note2  
Repetitive Avalanche Current Note3  
Repetitive Avalanche Energy Note3  
EAS  
IAR  
63  
EAR  
397  
mJ  
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%  
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH  
3. Tch(peak) ≤ 150°C, RG = 25 Ω  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16738EJ1V0DS00 (1st edition)  
Date Published September 2004 NS CP(K)  
Printed in Japan  
2004  
2SK3812  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
µA  
nA  
V
IDSS  
VDS = 60 V, VGS = 0 V  
10  
IGSS  
VGS = 20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 55 A  
VGS = 10 V, ID = 55 A  
VGS = 4.5 V, ID = 55 A  
VDS = 10 V  
100  
2.5  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
1.5  
50  
2.0  
110  
2.3  
Note  
Forward Transfer Admittance  
S
Note  
Drain to Source On-state Resistance  
2.8  
3.7  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
2.6  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
16800  
1600  
1000  
42  
Coss  
Crss  
VGS = 0 V  
f = 1 MHz  
td(on)  
tr  
VDD = 30 V, ID = 55 A  
VGS = 10 V  
160  
140  
15  
ns  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
RG = 0 Ω  
ns  
ns  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
QG  
VDD = 48 V  
250  
41  
nC  
nC  
nC  
V
QGS  
QGD  
VF(S-D)  
trr  
VGS = 10 V  
ID = 110 A  
66  
Note  
Body Diode Forward Voltage  
IF = 110 A, VGS = 0 V  
IF = 110 A, VGS = 0 V  
di/dt = 100 A/µs  
0.87  
53  
1.5  
Reverse Recovery Time  
Reverse Recovery Charge  
Note Pulsed  
ns  
Qrr  
74  
nC  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
V
GS  
0
RG  
= 25 Ω  
50 Ω  
R
L
90%  
V
GS  
Wave Form  
V
GS  
10%  
90%  
R
G
PG.  
V
DD  
PG.  
GS = 20 → 0 V  
V
DD  
V
DS  
90%  
V
DS  
V
0
GS  
BVDSS  
10% 10%  
V
DS  
Wave Form  
0
I
AS  
V
DS  
I
D
τ
t
d(on)  
t
r
t
d(off)  
t
f
V
DD  
t
on  
t
off  
τ = 1  
µs  
Duty Cycle ≤ 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
50 Ω  
PG.  
V
DD  
2
Data Sheet D16738EJ1V0DS  
2SK3812  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
250  
200  
150  
100  
50  
0
0
25  
50  
75 100 125 150 175  
0
25  
50  
75 100 125 150 175  
TC - Case Temperature - °C  
TC - Case Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
10  
I
D(pulse)  
R
DS(on) Limited  
(at VGS = 10 V)  
PW =100 µs  
I
D(DC)  
Power Dissipation Limited  
1 ms  
10 ms  
1
T
C
= 25°C  
Single pulse  
0.1  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
R
th(ch-A) = 83.3°C/W  
1
R
th(ch-C) = 0.587°C/W  
0.1  
0.01  
Single pulse  
1 m  
0.001  
100 µ  
10 m  
100 m  
1
10  
100  
1000  
PW - Pulse Width - s  
3
Data Sheet D16738EJ1V0DS  
2SK3812  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
500  
400  
300  
200  
100  
0
1000  
100  
10  
V
DS = 10 V  
Pulsed  
Pulsed  
V
GS = 10 V  
4.5 V  
T
A
= 150°C  
75°C  
1
25°C  
0.1  
−55°C  
0.01  
0.001  
0
0.4  
0.8  
1.2  
1.6  
1
2
3
4
5
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
1000  
100  
10  
V
DS = 10 V  
V
DS = 10 V  
= 1 mA  
Pulsed  
I
D
TA  
= 150°C  
75°C  
25°C  
55°C  
−
1
0.1  
1
10  
100  
1000  
-75  
-25  
25  
75  
125  
175  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
6
6
Pulsed  
Pulsed  
5
5
I
D
= 110 A  
55 A  
4
4
3
2
1
0
22 A  
V
GS = 4.5 V  
10 V  
3
2
1
0
1
10  
100  
1000  
0
2
4
6
8
10 12 14 16 18 20  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
4
Data Sheet D16738EJ1V0DS  
2SK3812  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE  
6
100000  
10000  
1000  
V
GS = 0 V  
Pulsed  
f = 1 MHz  
5
4
C
iss  
V
GS = 4.5 V  
3
2
1
0
10 V  
C
oss  
C
rss  
100  
-75  
-25  
25  
75  
125  
175  
0.1  
1
10  
100  
Tch - Channel Temperature - °C  
VDS - Drain to Source Voltage - V  
SWITCHING CHARACTERISTICS  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
10  
60  
50  
40  
30  
20  
10  
0
12  
10  
8
I = 110 A  
D
V
DD = 48 V  
30 V  
t
r
t
d(off)  
12 V  
t
t
d(on)  
f
6
V
GS  
4
V
V
DD = 30 V  
GS = 10 V  
= 0  
2
V
DS  
R
G
Ω
0
300  
1
0
50  
100  
150  
200  
250  
0.1  
1
10  
ID - Drain Current - A  
100  
1000  
QG - Gate Charge - nC  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
REVERSE RECOVERY TIME vs.  
DIODE FORWARD CURRENT  
1000  
100  
10  
1000  
100  
10  
di/dt = 100 A/µs  
V
GS = 10 V  
4.5 V  
V
GS = 0 V  
0 V  
1
Pulsed  
1.5  
1
0.1  
0.1  
1
10  
100  
1000  
0
0.5  
1
IF - Diode Forward Current - A  
VF(S-D) - Source to Drain Voltage - V  
5
Data Sheet D16738EJ1V0DS  
2SK3812  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
1000  
100  
10  
100  
80  
60  
40  
20  
0
V
DD = 30 V  
= 25 Ω  
GS = 20 → 0 V  
AS ≤ 63 A  
R
G
V
I
I
AS = 63 A  
EAS = 397 mJ  
V
DD = 30 V  
= 25 Ω  
GS = 20 → 0 V  
Starting Tch = 25°C  
R
G
V
1
0.001  
0.01  
0.1  
1
10  
25  
50  
75  
100  
125  
150  
L - Inductive Load - mH  
Starting Tch - Starting Channel Temperature - °C  
6
Data Sheet D16738EJ1V0DS  
2SK3812  
PACKAGE DRAWING (Unit: mm)  
TO-263 (MP-25ZP)  
10.0±0.3  
4.45±0.2  
1.3±0.2  
No plating  
7.88 MIN.  
4
0.025 to  
0.25  
0.5  
0.75±0.2  
2.54  
0.25  
1
2
3
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Source  
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately  
degrade the device operation. Steps must be taken to stop generation of static electricity as much as  
possible, and quickly dissipate it once, when it has occurred.  
7
Data Sheet D16738EJ1V0DS  
2SK3812  
•
The information in this document is current as of September, 2004. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not  
all products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
• No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of a customer's equipment shall be done under the full  
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by  
customers or third parties arising from the use of these circuits, software and information.  
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,  
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To  
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC  
Electronics products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment and anti-failure features.  
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and  
"Specific".  
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-  
designated "quality assurance program" for a specific application. The recommended applications of an NEC  
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of  
each NEC Electronics product before using it in a particular application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots.  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support).  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC  
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications  
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to  
determine NEC Electronics' willingness to support a given application.  
(Note)  
(1)  
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its  
majority-owned subsidiaries.  
(2)  
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as  
defined above).  
M8E 02. 11-1  
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