CZD5103
NPN Epitaxial Planar Silicon Transistor
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min. Typ. Max. Unit Test Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
100
-
-
V
IC=50ꢀA, IE=0
V(BR)CEO
V(BR)EBO
ICBO
60
5
-
-
-
V
V
A
A
V
V
V
V
IC=1mA, IB=0
-
-
IE=50ꢀA, IC=0
VCB=100V, IE=0
VEB=5V, IC=0
-
10
10
0.3
0.5
1.2
1.5
Emitter cut-off current
IEBO
-
-
*VCE(sat)1
-
0.15
IC=3A, IB=0.15A
IC=4A, IB=0.2A
IC=3A, IB=0.15A
IC=4A, IB=0.2A
Collector-emitter saturation voltage
Base-emitter saturation voltage
*DC current gain
*VCE(sat)
*VBE(sat)
*VBE(sat)
2
1
2
-
-
-
-
-
-
*hFE1
*hFE2
120
40
-
-
270
-
VCE=2V, IC=1A
VCE=2V, IC=3A
V
CB=10V, IE=-0.5A,
Transition frequency
Output Capacitance
Turn-On Time
fT
-
-
-
210
80
-
-
-
MHz
pF
f=30MHz
COB
TON
VCE=10V, IE=0, f=1MHz
0.3
IC=3A, RL=10Ω,
IB1=-IB2=0.15A, VCC=30V
Storage Time
Fall Time
TSTG
Tf
-
-
-
1.5
0.3
S
0.1
*Measured under pulse condition. Pulse width≦300μs, Duty Cycle≦2%
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Any changes of specification will not be informed individually.
23-Apr-2010 Rev. A
Page 2 of 4
