PJP24N10 / PJF24N10
TO-220AB / ITO-220AB
TO-220AB
100V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=24mΩ
ITO-220AB
• Low On Resistance
• Excellent Gate Charge x RDS(ON) Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Designed for AC Adapter, High-Frequency Switch
and Synchronous Rectification
3
3
2
2
S
S
1
D
1
D
G
G
• Component are in compliance with EU RoHS 2002/95/EC
directives
INTERNAL SCHEMATIC DIAGRAM
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Drain
ORDERING INFORMATION
TYPE
MARKING
P24N10
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
PJP24N10
PJF24N10
Source
F24N10
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol PJP24N10
PJF24N10
Units
V
VDS
VGS
ID
100
+20
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
V
A
A
42
42
IDM
160
160
TA=25OC
Maximum Power Dissipation
Derating Factor
89
32
PD
TJ,TSTG
EAS
W
0.71
0.42
-55 to +150
680
OC
mJ
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
IAS=17A, VDD=80V, L=4.7m
Η
Junction-to-Case Thermal Resistance
R
1.4
62.5
3.8
OC/W
OC/W
θJC
Junction-to Ambient Thermal Resistance
R
100
θJA
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE
June 03, 2010-REV.01
PAGE . 1
