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PJF12N65

型号：

PJF12N65

描述：

650V N沟道增强型MOSFET[ 650V N-Channel Enhancement Mode MOSFET ]

品牌：

PANJIT[ PAN JIT INTERNATIONAL INC. ]

页数：

6 页

PDF大小：

221 K

下载PDF手册

PJP12N65 / PJF12N65

TO-220AB / ITO-220AB

TO-220AB

650V N-Channel Enhancement Mode MOSFET

FEATURES

• 12A , 650V, R_DS(ON)=0.8Ω@V_GS=10V, I_D=6.0A

ITO-220AB

• Low ON Resistance

• Fast Switching

• Low Gate Charge

• Fully Characterized Avalanche Voltage and Current

• Specially Desigened for AC Adapter, Battery Charge and SMPS

• In compliance with EU RoHs 2002/95/EC Directives

MECHANICAL DATA

• Case: TO-220AB / ITO-220AB Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

INTERNAL SCHEMATIC DIAGRAM

Drain

ORDERING INFORMATION

TYPE

MARKING

P12N65

PACKAGE

TO-220AB

ITO-220AB

PACKING

50PCS/TUBE

Gate

PJP12N65

PJF12N65

Source

F12N65

Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )

PARAMETER

Drain-Source Voltage

Symbol PJP12N65

PJF12N65

Units

V_DS

V_GS

I_D

650

+30

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current ¹⁾

I_DM

T_A=25^OC

Maximum Power Dissipation

Derating Factor

175

1.4

P_D

T_J,T_STG

E_AS

0.42

-55 to +150

990

^OC

Operating Junction and Storage Temperature Range

Avalanche Energy with Single Pulse

I_AS=12A, VDD=90V, L=12m

Junction-to-Case Thermal Resistance

0.7

62.5

2.4

^OC/W

θJC

Junction-to Ambient Thermal Resistance

Note : 1. Maximum DC current limited by the package

100

θJA

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE

STAD-DEC.25.2009

PAGE . 1

PJP12N65 / PJF12N65

ELECTRICAL CHARACTERISTICS ( T_A=25^OC unless otherwise noted )

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

Units

Static

Drain-Source Breakdown Voltag e

BV_DSS

V_GS(th)

650

2.0

V_GS=0V, I _D=250uA

V_DS=V_GS, I _D=250uA

Gate Threshold Voltage

4.0

Drain-Source On-State

Resistance

R_DS(on)

0.66

0.8

Ω

V_GS= 10V, I _D= 6.0A

Zero Gate Voltage Drain

Current

I _DSS

I _GSS

V_DS=650V, V_GS=0V

Gate Body Leakage

+100

nΑ

V_GS=+30V, V_DS=0V

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Input Capacitance

Output Capacitance

Q_g

46.8

9.2

V_DS=520V, I_D=12A,

V_GS=10V

14.6

16.2

26.8

d(on)

V_DD=325V, I_D=12A

V_GS=10V, R_G=25Ω

2450

195

d(off)

24.6

1800

145

iss

V_DS=25V, V_GS=0V

f=1.0MH_Z

oss

Reverse Transfer

Capacitance

rss

Source-Drain Diode

Max. Diode Forward Current

I _S

1.4

Max.Pulsed Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

I _SM

V_SD

I_S=12A , V_GS=0V

450

5.0

V_GS=0V, I_F=12A

di/dt=100A/us

NOTE : Plus Test : Pluse Width < 300us, Duty Cycle < 2%.

STAD-DEC.25.2009

PAGE . 2

PJP12N65 / PJF12N65

Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)

100

V_GS= 20V~ 6.0V

V_DS=50V

5.0V

T_J= 125^oC

25^oC

-55^oC

0.1

V_DS- Drain-to-Source Voltage (V)

V_GS- Gate-to-Source Voltage (V)

Fig.1 Output Characteristric

Fig.2 Transfer Characteristric

1.5

1.2

0.9

0.6

0.3

2.5

I_D=6.0A

V_GS=10V

1.5

T_J=25^oC

V_GS= 20V

0.5

10 12 14 16 18 20

I_D- Drain Current (A)

V_GS- Gate-to-Source Voltage (V)

Fig.4 On Resistance vs Gate to Source Voltage

Fig.3 On Resistance vs Drain Current

2.5

3000

f = 1MHz

V_GS= 0V

V_GS=10 V

I_D=6.0A

2.3

2.1

1.9

1.7

1.5

1.3

1.1

0.9

0.7

0.5

2500

2000

1500

1000

500

Ciss

Coss

Crss

-50 -25

25 50 75 100 125 150

V_DS- Drain-to-Source Voltage (V)

T_J- Junction Temperature (^oC)

Fig.6 Capacitance

Fig.5 On Resistance vs Junction Temperature

PAGE. 3

STAD-DEC.25.2009

℃

PJP12N65 / PJF12N65

Typical Characteristics Curves ( Ta=25℃, unless otherwise noted)

100

I_D=12A

V_GS= 0V

DS=520V

DS=325V

DS=130V

T_J= 125^oC

25^oC

-55^oC

0.1

0.01

10 15 20 25 30 35 40 45 50

Q_g- Gate Charge (nC)

0.2

0.4

0.6

0.8

V_SD- Source-to-Drain Voltage (V)

1.2

1.4

Fig. 7 Gate Charge Waveform

Fig.8 Source-Drain Diode Forward Voltage

1.2

1.1

I_D= 250µA

0.9

0.8

-50 -25

TJ - Junction Temperature (^oC)

Fig.9 Breakdown Voltage vs Junction Temperature

100 125 150

PAGE. 4

STAD-DEC.25.2009

PJP12N65 / PJF12N65

LEGALSTATEMENT

The information presented in this document is believed to be accurate and reliable. The specifications and information herein

are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit

does not convey any license under its patent rights or rights of others.

STAD-DEC.25.2009

PAGE . 5

HALOGEN FREE PRODUCT DECLARATION

(Use green molding compound:ELER-8)

1. Pan Jit can produce halogen free product use molding compound for

packing from Mar.2008 that contain Br<700 ppm,Cl<700ppm,

Br+Cl<1000ppm,Sb2O3<100ppm.

2. If your company need halogen free product shall be note requirement

green compound material on order for the halogen free product

request.

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