PJP10N60 / PJF10N60
TO-220AB / ITO-220AB
TO-220AB
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 600V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A
ITO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
3
2
2
S
S
1
D
1
D
G
G
MECHANICAL DATA
INTERNAL SCHEMATIC DIAGRAM
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
Drain
ORDERING INFORMATION
TYPE
MARKING
P10N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
PJP10N60
PJF10N60
Source
F10N60
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol PJP10N60
PJF10N60
Units
V
VDS
VGS
ID
600
+30
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
V
A
A
10
40
10
40
IDM
TA=25OC
Maximum Power Dissipation
Derating Factor
156
50
PD
W
1.25
0.4
Operating Junction and Storage Temperature Range
TJ,TSTG
EAS
-55 to +150
500
OC
Avalanche Energy with Single Pulse
IAS=10A, VDD=50V, L=10mH
mJ
Junction-to-Case Thermal Resistance
R
0.8
62.5
2.5
OC/W
OC/W
θJC
Junction-to Ambient Thermal Resistance
Note: 1. Maximum DC current limited by the package
R
100
θJA
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE
March 31,2010-REV.00
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