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PJF10NA65

型号：

PJF10NA65

品牌：

PANJIT[ PAN JIT INTERNATIONAL INC. ]

页数：

8 页

PDF大小：

345 K

下载PDF手册

PPJP10NA65 / PJF10NA65

650V N-Channel MOSFET

650 V

10 A

Voltage

Current

Features

 R_DS(ON), V_GS@10V,I_D@5A<1Ω

 High switching speed

 Improved dv/dt capability

 Low Gate Charge

ITO-220AB-F

TO-220AB

 Low reverse transfer capacitance

 Lead free in compliance with EU RoHS 2011/65/EU directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case : TO-220AB, ITO-220AB-F Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams

 ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

Drain-Source Voltage

SYMBOL

TO-220AB

ITO-220AB-F

UNITS

V_DS

V_GS

I_D

650

+30

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy ^{(Note 1)}

I_DM

E_AS

608

W/ ^oC

T_C=25^oC

Power Dissipation

156

P_D

Derate above 25^oC

1.25

0.4

Operating Junction and

T_J,T_STG

-55~150

^oC

Storage Temperature Range

Typical Thermal resistance

^oC/W

R_θJC

R_θJA

0.8

2.5

Junction to Case

62.5

120

Junction to Ambient

 Limited only By Maximum Junction Temperature

March 10,2014-REV.00

Page 1

PPJP10NA65 / PJF10NA65

Electrical Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Diode Forward Voltage

Dynamic ^{(Note 4)}

BV_DSS

V_GS(th)

R_DS(on)

I_DSS

V_GS=0V,I_D=250uA

V_DS=V_GS,I_D=250uA

V_GS=10V,I_D=5A

650

2.8

0.88

0.03

+10

0.9

1.0

+100

1.4

V_DS=650V,V_GS=0V

V_GS=+30V,V_DS=0V

I_S=10A,V_GS=0V

I_GSS

V_SD

Total Gate Charge

Q_g

Q_gs

V_DS=520V, I_D=10A,

V_GS=10V ^{(Note 2,3)}

Gate-Source Charge

Gate-Drain Charge

Q_gd

Input Capacitance

Ciss

Coss

Crss

1200

140

V_DS=25V, V_GS=0V,

f=1.0MHZ

Output Capacitance

Reverse Transfer Capacitance

Switching

Turn-On Delay Time

td_(on)

t_r

V_DD=325V, I_D=10A,

Turn-On Rise Time

R_G=25Ω

(Note 2,3)

Turn-Off Delay Time

td_(off)

t_f

Turn-Off Fall Time

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

Maximum Pulsed Drain-Source

Diode Forward Current

Reverse Recovery Time

I_S

---

I_SM

trr

570

4.7

V_GS=0V, I_S=10A

dI_F/ dt=100A/us ^{(Note 2)}

Reverse Recovery Charge

NOTES :

1. L=30mH, I_AS=6.2A, V_DD=50V, R_G=25 ohm, Starting T_J=25^oC

Qrr

2. Pulse width<300us, Duty cycle<2%

3. Essentially independent of operating temperature typical characteristics.

4. Guaranteed by design, not subject to production testing

March 10,2014-REV.00

Page 2

PPJP10NA65 / PJF10NA65

TYPICAL CHARACTERISTIC CURVES

Fig.1 Output Characteristics

Fig.2 Transfer Characteristics

Fig.4 Source-Drain Diode Forward Voltage

Fig.6 Gate Charge

Fig.3 On-Resistance vs. Drain Current

Fig.5 Capacitance vs. Drain-Source Voltage

March 10,2014-REV.00

Page 3

PPJP10NA65 / PJF10NA65

TYPICAL CHARACTERISTIC CURVES

Fig.7 BV_DSSvs. Junction Temperature

Fig.8 On-Resistance vs. Junction Temperature

Fig.9 Threshold Voltage Variation with Temperature

Fig.10 Maximum Safe Operating Area

Fig.11 Maximum Safe Operating Area

March 10,2014-REV.00

Page 4

PPJP10NA65 / PJF10NA65

TYPICAL CHARACTERISTIC CURVES

Fig.13 PJP10NA65 Normalized Transient Thermal Impedance vs. Pulse Width

Fig.14 PJF10NA65 Normalized Transient Thermal Impedance vs. Pulse Width

March 10,2014-REV.00

Page 5

PPJP10NA65 / PJF10NA65

Packaging Information

ITO-220AB-F Dimension

Unit: mm

TO-220AB Dimension

Unit: mm

March 10,2014-REV.00

Page 6

PPJP10NA65 / PJF10NA65

PART NO PACKING CODE VERSION

Part No Packing Code

PJP10NA65_T0_00001

PJF10NA65_T0_00001

Package Type

TO-220AB

Packing type

50pcs / Tube

Marking

P10NA65

F10NA65

Version

Halogen free

ITO-220AB-F

March 10,2014-REV.00

Page 7

PPJP10NA65 / PJF10NA65

Disclaimer

● Reproducing and modifying information of the document is prohibited without permission from Panjit

International Inc..

● Panjit International Inc. reserves the rights to make changes of the content herein the document anytime

without notification. Please refer to our website for the latest document.

● Panjit International Inc. disclaims any and all liability arising out of the application or use of any product

including damages incidentally and consequentially occurred.

● Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for

particular purpose, non-infringement and merchantability.

● Applications shown on the herein document are examples of standard use and operation. Customers are

responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no

representation or warranty that such applications will be suitable for the specified use without further testing or

modification.

● The products shown herein are not designed and authorized for equipments requiring high level of reliability or

relating to human life and for any applications concerning life-saving or life-sustaining, such as medical

instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these

products for use in such applications do so at their own risk and agree to fully indemnify Panjit International

Inc. for any damages resulting from such improper use or sale.

● Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when

complaining.

March 10,2014-REV.00

Page 8

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