IXZ210N50L & IXZ2210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for Linear Operation
VDSS
ID25
=
=
500 V
10 A
Ideal for Class AB & C, Broadcast & Communications Applications
150V (operating)
300 & 550 Watts
175MHz
Note: All data is per the IXZ210N50L single ended device unless otherwise noted.
Symbol
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mꢀ
Continuous
Maximum Ratings
VDSS
VDGR
VGS
500
500
±20
±30
10
V
V
V
V
A
A
Transient
VGSM
ID25
Tc = 25°C
Tc = 25°C, pulse width limited by
TJM
IDM
60
Tc = 25°C
Tc = 25°C
IAR
16
TBD
5
A
mJ
EAR
IS ≤ꢁIDM, di/dt ≤ꢁ 100A/ꢂs, VDD
VDSS
≤
V/ns
,
dv/dt
Tj ≤ 150°C, RG = 0.2ꢀ
IS = 0
>200
V/ns
IXZ210N50L IXZ2210N50L
PDC
470
235
940
470
W
W
Tc = 25°C, Derate 6.0W/°C above
25°C
PDHS
Tc = 25°C
PDAMB
RthJC
10
10
0.16
0.29
W
C/W
C/W
0.32
0.57
RthJHS
Features
min.
500
3.5
typ.
max.
•ꢁ Isolated Substrate
−ꢁ high isolation voltage (>2500V)
−ꢁ excellent thermal transfer
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250ꢂΑ
VGS = ±20 VDC, VDS = 0
VDSS
VGS(th)
IGSS
V
V
4.95
6.5
−ꢁ Increased temperature and power
cycling capability
±100
nA
•ꢁ IXYS RF Low Capacitance Z-MOSTM
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
IDSS
50
1
ꢂA
mA
Process
•ꢁ Very low insertion inductance (<2nH)
•ꢁ No beryllium oxide (BeO) or other
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300ꢂS, duty cycle d ≤ 2%
RDS(on)
1.0
3.8
ꢀ
hazardous materials
Advantages
VDS = 50 V, ID = 0.5ID25, pulse test
gfs
S
°C
°C
°C
°C
g
•ꢁ High Performance RF Package
•ꢁ Easy to mount—no insulators needed
TJ
-55
-55
+175
+175
+ 175
TJM
Tstg
TL
(1) Thermal specifications are for the pack-
age, not per transistor
1.6mm(0.063 in) from case for 10 s
300
4
Weight