IXZ4DF12N100
RFꢀPowerꢀMOSFETꢀ&ꢀDRIVERꢀ
1000ꢀVoltsꢀ
12ꢀAꢀ
0.7ꢀOhmsꢀ
Driverꢀ/ꢀMOSFETꢀCombinationꢀꢀ
DEICꢁ515ꢀDriverꢀcombinedꢀwithꢀaꢀDE375ꢁ102N12AꢀMOSFETꢀ
GateꢀdriverꢀmatchedꢀtoꢀMOSFETꢀꢀ
Featuresꢀ
•ꢀ IsolatedꢀSubstrateꢀ
−ꢀ highꢀisolationꢀvoltageꢀ(>2500V)ꢀ
−ꢀ excellentꢀthermalꢀtransferꢀ
−ꢀ Increasedꢀtemperatureꢀandꢀpowerꢀcyclingꢀcapabilityꢀꢀꢀ
•ꢀ IXYSꢀadvancedꢀZꢁMOSꢀprocessꢀ
•ꢀ LowꢀRDS(on)ꢀ
•ꢀ Veryꢀlowꢀinsertionꢀinductanceꢀ(<2nH)ꢀ
•ꢀ Noꢀberylliumꢀoxideꢀ(BeO)ꢀorꢀotherꢀhazardousꢀmaterialsꢀꢀ
•ꢀ BuiltꢀusingꢀtheꢀadvantagesꢀandꢀcompatibilityꢀofꢀCMOSꢀandꢀIXYSꢀ
HDMOS™ꢀprocessesꢀ
•ꢀ LatchꢁUpꢀProtectedꢀ
•ꢀ LowꢀQuiescentꢀSupplyꢀCurrentꢀ
ꢀ
Applicationsꢀ
Advantagesꢀ
•ꢀ ClassꢀDꢀorꢀEꢀSwitchingꢀ
Amplifierꢀ
•ꢀ MultiꢀMHzꢀSwitchꢀModeꢀ
PowerꢀSuppliesꢀ(SMPS)ꢀ
•ꢀ OptimizedꢀforꢀRFꢀandꢀhighꢀspeedꢀ
•ꢀ Easyꢀtoꢀmount—noꢀinsulatorsꢀneededꢀ
•ꢀ Highꢀpowerꢀdensityꢀ
•ꢀ Singleꢀpackageꢀreducesꢀsizeꢀandꢀheatꢀsinkꢀareaꢀ
Description
ꢀ
TheꢀIXZ4DF12N100ꢀisꢀaꢀCMOSꢀhighꢀspeedꢀhighꢀcurrentꢀgateꢀdriverꢀandꢀaꢀMOSFETꢀcombinationꢀspecificallyꢀ
designedꢀClassꢀD,ꢀE,ꢀHF,ꢀRFꢀapplicationsꢀatꢀupꢀtoꢀ40MHz,ꢀasꢀwellꢀasꢀotherꢀapplications.ꢀTheꢀIXZ4DF12N100ꢀinꢀ
pulseꢀmodeꢀcanꢀprovideꢀ72Aꢀofꢀpeakꢀcurrentꢀwhileꢀproducingꢀvoltageꢀriseꢀandꢀfallꢀtimesꢀofꢀlessꢀthanꢀ5ns,ꢀandꢀ
minimumꢀpulseꢀwidthsꢀofꢀ8ns.ꢀTheꢀinputꢀofꢀtheꢀdriverꢀꢀisꢀfullyꢀimmuneꢀtoꢀlatchꢀupꢀoverꢀtheꢀentireꢀoperatingꢀ
range.ꢀDesignedꢀwithꢀsmallꢀinternalꢀdelays,ꢀtheꢀIXZ4DF12N100ꢀisꢀsuitableꢀforꢀhigherꢀpowerꢀoperationꢀwhereꢀ
combinersꢀareꢀused.ꢀItsꢀfeaturesꢀandꢀwideꢀsafetyꢀmarginꢀinꢀoperatingꢀvoltageꢀandꢀpowerꢀmakeꢀtheꢀ
IXZ4DF12N100ꢀunmatchedꢀinꢀperformanceꢀandꢀvalue.
TheꢀIXZ4DF12N100ꢀisꢀpackagedꢀinꢀDEIsꢀlowꢀinductanceꢀRFꢀpackageꢀincorporatingꢀDEI'sꢀRFꢀlayoutꢀtechniquesꢀ
toꢀminimizeꢀstrayꢀleadꢀinductancesꢀforꢀoptimumꢀswitchingꢀperformance.ꢀTheꢀIXZ4DF12N100ꢀisꢀaꢀsurfaceꢁ
mountableꢀdevice.ꢀ
Figureꢀ1.ꢀ
FunctionalꢀDiagramꢀ
