IXZ12210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOSTM MOSFET Process
Optimized for Linear Operation
VDSS
ID25
=
=
500 V
10 A
Ideal for Class AB & C, Broadcast & Communications Applications
125V (operating)
175MHz
Note: All data is per the IXZ1210N50L single ended device unless otherwise
Symbol
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Maximum Ratings
500
500
±20
±30
10
V
V
V
V
A
A
VDSS
VDGR
VGS
Transient
VGSM
ID25
Tc = 25°C
Tc = 25°C, pulse width limited by
TJM
60
IDM
Tc = 25°C
Tc = 25°C
16
TBD
5
A
mJ
IAR
EAR
IS ≤ IDM, di/dt ≤ 100A/µs, VDD
VDSS
≤
V/ns
,
dv/dt
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
>200
V/ns
Per Device
Total
180
150
360
W
W
PDC
Tc = 25°C, Derate 6.0W/°C above
25°C
300
PDHS
Tc = 25°C
10
W
C/W
C/W
PDAMB
RthJC
0.83
1.00
0.42
0.50
RthJHS
Features
min.
500
3.5
typ.
max.
• IXYS RF Low Capacitance Z-MOSTM
Process
VGS = 0 V, ID = 4 ma
VDS = VGS, ID = 250µΑ
VGS = ±20 VDC, VDS = 0
V
V
VDSS
VGS(th)
IGSS
• Very low insertion inductance (<2nH)
4.83
6.5
Advantages
±100
nA
• High Performance RF Package
• Easy to mount—no insulators needed
• Standard RF Package
VDS = 0.8VDSS
VGS=0
TJ = 25C
TJ =125C
50
1
IDSS
µA
mA
VGS = 20 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
1.0
3.8
RDS(on)
Ω
(1) Thermal specifications are for the pack-
age, not per transistor
VDS = 50 V, ID = 0.5ID25, pulse test
S
°C
°C
°C
°C
g
gfs
-55
-55
+175
+175
+ 175
TJ
TJM
Tstg
TL
1.6mm(0.063 in) from case for 10 s
300
4
Weight
