请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXZ210N50L2

型号：

IXZ210N50L2

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

861 K

下载PDF手册
IXZ210N50L2  
RF Power MOSFET  
N-channel enhancement mode linear RF power MOSFET  
Ideal for class AB and C industrial, scienꢀꢁc, medical, and commercial applicaꢀons.  
VDSS = 500 V  
ID25 = 10 A  
Advantages  
Features  
High Performance RF Package  
Easy to mount—no insulators needed  
Isolated Substrate  
high isolation voltage (>2500V)  
excellent thermal transfer  
DRAIN  
Increased temperature and power cycling  
capability  
GATE  
IXYS RF Low Capacitance Z-MOSTM Process  
Very low insertion inductance (<2nH)  
No beryllium oxide (BeO) or other  
hazardous materials  
SG1  
SG2  
SD1  
SD2  
Maximum Raꢀngs  
Symbol Parameter  
Test Conditions  
Maximum Units  
Drain-source voltage  
TJ = 25°C to 150°C  
VDSS  
500  
Drain-gate voltage  
TJ = 25°C to 150°C; RGS = 1 M  
Continuous  
VDGR  
500  
V
VGS  
±20  
Gate-source voltage  
Transient  
VGSM  
±30  
Continuous drain current  
Tc = 25°C  
Tc = 25°C  
ID25  
10  
390  
A
Package power dissipation  
PDC  
PDHS  
Dissipation to heat-sink  
Tc = 25°C, Derate 6.0W/°C above 25°C  
TAMB = 25°C  
220  
W
PDAMB  
RthJC  
RthJHS  
Ambient power dissipation  
10  
Thermal resistance junction to case  
0.32  
0.57  
-55 - 150  
° C/W  
° C  
Thermal resistance junction to heat-sink  
TJ, TSTG  
Operating and storage junction temperature range  
Lead temperature  
1.6mm(0.063 in) from case for 10 s  
TL  
300  
Electrical Characterisꢀcs  
Symbol Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Static  
VGS = 0 V, ID = 4 ma  
500  
V
Breakdown voltage drain to source  
BVDSS  
IDSS  
IGSS  
gfs  
VDS = 0.8VDSS  
VGS= 0  
TJ = 25C  
TJ =125C  
50  
1
A  
mA  
Drain leakage current  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
Gate leakage current  
Transconductance  
Threshold voltage  
VDS = 60 V, ID = 0.5ID25, pulse test  
3.1  
5.4  
S
VDS = VGS, ID = 250  
4.0  
6.5  
V
VGS(th)  
IXZ210N50L2  
RF Power MOSFET  
Electrical Characterisꢀcs cont.  
Symbol Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Dynamic  
VGS = 15 V, ID = 0.5 ID25  
Pulse test, t 300S, duty cycle d 2%  
1
Drain to source ON resistance  
RDS(on)  
611  
100  
6
pF  
pF  
pF  
Input capacitance  
CISS  
Output capacitance  
COSS  
VGS = 0 V, VDS = 0.8 VDSS, f = 1 MHz  
Reverse transfer capacitance  
CRSS  
tD(ON)  
tR  
4
3
4
ns  
ns  
ns  
Turn-on delay time  
Rise time  
VGS = 15 V, VDS = 0.8 VDSS  
Turn-off delay time  
tD(OFF)  
5
ns  
Fall time  
tF  
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the de-  
vice.  
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-  
lished in this document at any time and without notice.  
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYS  
Colorado web site.  
IXZ210N50L2  
RF Power MOSFET  
Fig. 2  
Fig. 1  
Capacitance vs. VDS  
ID vs. VDS  
10000  
1000  
100  
10  
25  
20  
15  
10  
5
VGS = 15 V  
Ciss  
VGS = 12 V  
VGS = 11 V  
Coss  
VGS = 10 V  
VGS = 9 V  
Crss  
V
GS = 8 V  
GS = 7 V  
V
0
1
0
20  
40  
60  
80  
100  
120  
140  
0
100  
200  
300  
400  
500  
VDS (V)  
VDS (V)  
Fig. 4  
Fig. 3  
RDS(ON) vs. VGS  
Typical Transfer Characteristics  
2.5  
2
16  
14  
12  
10  
8
85° C  
1.5  
1
25° C  
6
-40° C  
25 °C  
4
0.5  
0
85 °C  
2
-40 °C  
0
10  
11  
12  
13  
14  
15  
4
6
8
10  
12  
VGS Gate to Source Volatge (V)  
VGS Gate to Source Voltage (V)  
Fig. 5  
Fig. 6  
Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Time (s)  
IXZ210N50L2  
RF Power MOSFET  
Fig. 7  
Power Gain vs. Frequency  
40  
35  
30  
25  
20  
15  
10  
5
Bias 125V 0.5A  
Bias 100V 0.2A  
20  
0
0
40  
60  
80  
100  
Frequency (MHz)  
Table 1  
S Parameters  
VDS = 100V IBIAS = 0.2A  
Freq. (MHz) Mag. S11 Phase S11 Mag. S12 Phase S12  
Mag. S21 Phase S21 Mag. S22 Phase S22  
2
5
10  
13.56  
15  
20  
25  
27.12  
30  
35  
40  
45  
50  
60  
70  
80  
90  
100  
105  
110  
1
0.95  
-56  
0.011  
0.018  
0.019  
0.018  
0.018  
0.016  
0.015  
0.014  
0.013  
0.011  
0.009  
0.008  
0.007  
0.005  
0.005  
0.006  
0.008  
0.009  
0.01  
66  
31  
5.4  
-4.2  
-7.3  
-16  
-20.9  
-22.4  
-24.6  
-26.8  
-26.3  
-24.4  
-19.6  
-2  
26.3  
45.8  
54.1  
60  
35.6  
23.2  
12.6  
8.45  
7.8  
5.5  
4.3  
3.97  
3.3  
2.76  
2.19  
1.88  
1.55  
1.19  
0.93  
0.746  
0.68  
0.585  
0.5  
155.4  
118.6  
92.9  
82.1  
78.3  
67.8  
60  
57.3  
54  
48.8  
44.5  
41.4  
38  
0.886  
0.727  
0.664  
0.674  
0.69  
0.725  
0.77  
0.782  
0.798  
0.83  
0.856  
0.87  
0.89  
0.909  
0.92  
0.935  
0.901  
0.939  
0.94  
-3.7  
-36  
-61  
-75  
-80  
-94.7  
-107.3  
-111.4  
-117.2  
-125.3  
-132.5  
-137.9  
-143.4  
-151  
-159  
-165  
-167.24  
-172.3  
-174.6  
-176.76  
-106.4  
-138.5  
-149.1  
-151.9  
-158.6  
-162.7  
-164.2  
-165.2  
-168  
-169.7  
-171.4  
-172.2  
-174.3  
-175.8  
-177.4  
-178.3  
-179.3  
-179.7  
179.7  
0.934  
0.937  
0.938  
0.945  
0.95  
0.954  
0.959  
0.96  
0.962  
0.965  
0.969  
0.971  
0.972  
0.9724  
0.972  
0.972  
0.973  
0.971  
33  
28.7  
25.4  
26.8  
20  
19.7  
17.1  
61.5  
64.3  
0.011  
0.468  
0.939  
IXZ210N50L2  
RF Power MOSFET  
Table 2  
S Parameters  
VDS = 100V IBIAS = 0.6A  
Freq. (MHz) Mag. S11 Phase S11 Mag. S12 Phase S12  
Mag. S21 Phase S21 Mag. S22 Phase S22  
2
5
10  
13.56  
15  
20  
25  
27.12  
30  
35  
40  
45  
50  
60  
70  
80  
90  
100  
105  
110  
1
-67.8  
-117  
-145.7  
-154  
-157  
-161  
0.01  
0.015  
0.016  
0.015  
0.015  
0.014  
0.012  
0.011  
0.011  
0.01  
0.008  
0.008  
0.006  
0.0057  
0.005  
0.006  
0.008  
0.01  
61.9  
26.6  
5.3  
-2.2  
-4.6  
-11  
-15  
-15.5  
-17.4  
-19  
-17.6  
-13  
-9  
8
31  
47  
56  
61  
62  
64  
62.5  
36.5  
19.7  
14.3  
12.9  
9.3  
6.9  
6.3  
5.4  
4.3  
3.6  
3
2.5  
1.94  
1.49  
1.19  
1.05  
0.903  
0.82  
0.78  
151  
114  
91  
81.6  
78.1  
68.7  
61.2  
58.4  
55.2  
50  
45.6  
42.1  
38.6  
33.1  
28.6  
25.3  
27.8  
19.7  
18  
0.79  
0.57  
0.51  
0.53  
0.54  
0.59  
0.62  
0.65  
0.702  
0.74  
-15  
-53  
-76  
-88  
-92  
0.924  
0.91  
0.916  
0.92  
0.927  
0.933  
0.935  
0.939  
0.945  
0.95  
0.955  
0.96  
0.964  
0.967  
0.97  
0.972  
0.971  
0.972  
0.972  
-105  
-115.6  
-118  
-123  
-130  
-136  
-141  
-146  
-154  
-160.5  
-166.5  
-169.7  
-173.7  
-175.8  
-177.8  
-165  
-166  
-167.5  
-169.5  
-171  
-172.3  
-173.4  
-175.4  
-177  
-178.3  
-178.5  
-179.5  
-179.9  
179.5  
0.78  
0.805  
0.825  
0.86  
0.885  
0.897  
0.865  
0.905  
0.912  
0.912  
0.01  
0.011  
16.7  
IXZ210N50L2  
RF Power MOSFET  
Table 3  
S Parameters  
VDS = 125V IBIAS = 0.5A  
Freq. (MHz) Mag. S11 Phase S11 Mag. S12 Phase S12  
Mag. S21 Phase S21 Mag. S22 Phase S22  
2
5
10  
13.56  
15  
20  
25  
27.12  
30  
35  
40  
45  
50  
60  
70  
80  
90  
100  
105  
110  
1
-60  
-112  
-142  
-151  
-155  
-160  
-164  
-165.8  
-167  
-169  
-171  
-172  
-173.2  
-175  
-177  
-178.3  
-179.6  
-179.4  
-179.9  
179  
0.009  
0.015  
0.016  
0.016  
0.015  
0.014  
0.0128  
0.0123  
0.0116  
0.01  
0.0089  
0.008  
0.007  
0.0055  
0.0055  
0.0064  
0.0084  
0.0095  
0.01  
64  
29  
6.5  
-1.4  
-3.7  
-11.2  
-15.1  
-16.3  
-17.5  
-18  
-17.8  
-15  
-11  
6
31  
55  
34  
18.7  
13.7  
12.5  
9
153  
116  
92  
0.825  
0.618  
0.54  
0.55  
0.56  
0.61  
0.67  
0.68  
0.72  
0.76  
0.79  
0.81  
0.83  
0.86  
0.88  
0.9  
-9.5  
-43  
-66  
-79  
-83  
0.935  
0.922  
0.925  
0.927  
0.933  
0.939  
0.942  
0.944  
0.95  
0.955  
0.959  
0.961  
0.967  
0.97  
83  
79.6  
70.1  
62.4  
59.8  
56.5  
51.3  
47  
-97  
6.7  
6
-107  
-111  
-116  
-124  
-130  
-136  
-141  
-150  
-157  
-164  
-165  
-171  
-173  
-175  
5.3  
4.2  
3.3  
2.8  
2.4  
1.8  
1.4  
1.1  
1.04  
0.88  
0.8  
0.74  
43.4  
39  
34.5  
29.6  
26.3  
28.5  
20.6  
19  
0.971  
0.972  
0.972  
0.97  
44.5  
56  
61  
61.7  
64  
0.86  
0.908  
0.91  
0.91  
0.97  
0.011  
17.5  
IXZ210N50L2  
RF Power MOSFET  
Fig. 8 Package Dimensions  
Source  
Drain  
Source  
Gate  
Source  
Source  
Doc #dsIXZ210N50L2 REV 8/16  
© 2016 IXYS RF  
An  
IXYS Company  
1609 Oakridge Dr. Suite 100  
Fort Collins, CO USA 80525  
970-493-1901 Fax: 970-232-3025  
Email: sales@ixyscolorado.com  
Web: http://www.ixyscolorado.com  
厂商 型号 描述 页数 下载

IXYS

 		IXZ12210N50L RF功率MOSFET[ RF Power MOSFET ] 4 页

IXYS

 		IXZ210N50L N沟道增强型线性175MHz的射频MOSFET[ N-Channel Enhancement Mode Linear 175MHz RF MOSFET ] 9 页

IXYS

 		IXZ210N50L_07 RF功率MOSFET[ RF Power MOSFET ] 9 页

IXYS

 		IXZ2210N50L N沟道增强型线性175MHz的射频MOSFET[ N-Channel Enhancement Mode Linear 175MHz RF MOSFET ] 9 页

IXYS

 		IXZ2210N50L2 [ RF MOSFET 2N-CHANNEL DE275 ] 7 页

IXYS

 		IXZ308N120 Z- MOS RF功率MOSFET[ Z-MOS RF Power MOSFET ] 3 页

IXYS

 		IXZ316N60 Z- MOS RF功率MOSFET[ Z-MOS RF Power MOSFET ] 4 页

IXYS

 		IXZ318N50 Z- MOS RF功率MOSFET[ Z-MOS RF Power MOSFET ] 4 页

IXYS

 		IXZ4DF12N100 RF功率MOSFET和DRIVER[ RF Power MOSFET & DRIVER ] 7 页

IXYS

 		IXZ4DF18N50 RF功率MOSFET和DRIVER[ RF Power MOSFET & DRIVER ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.225265s