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XU1004-BD_08

型号:

XU1004-BD_08

描述:

32.0-45.0 GHz的砷化镓MMIC[ 32.0-45.0 GHz GaAs MMIC ]

品牌:

MIMIX[ MIMIX BROADBAND ]

页数:

7 页

PDF大小:

264 K

32.0-45.0 GHz GaAs MMIC  
Transmitter  
October 2008 - Rev 16-Oct-08  
U1004-BD  
Features  
Chip Device Layout  
Sub-harmonic Transmitter  
Integrated Mixer, LO Doubler/Buffer & Output Amplifier  
+14.0 dBm Output Third Order Intercept (OIP3)  
+4.0 dBm LO Drive Level  
5.0 dB Conversion Gain  
100% On-Wafer RF and DC Testing  
100% Commercial-Level Visual Inspection Using  
Mil-Std-883 Method 2010  
General Description  
Mimix Broadbands 32.0-45.0 GHz GaAs MMIC transmitter has a  
+14.0 dBm output third order intercept across the band.This  
device is a balanced, resistive pHEMT mixer followed by a  
distributed output amplifier and includes an integrated LO  
doubler and LO buffer amplifier.The use of integrated LO  
doubler and LO buffer amplifier makes the provision of the LO  
easier than for fundamental mixers at these frequencies. IF and  
IF mixer inputs are provided and an external 180 degree hybrid  
is required to select the desired sideband.This MMIC uses  
Mimix Broadbands GaAs PHEMT device model technology, and  
is based upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface passivation to  
protect and provide a rugged part with backside via holes and  
gold metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id1,Id2)  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
200, 180 mA  
+0.3 VDC  
0.0 dBm  
-65 to +165 OC  
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
dB  
dBm  
dB  
Min.  
35.0  
32.0  
16.0  
DC  
-
-
-
Typ.  
-
-
-
-
Max.  
45.0  
42.0  
25.0  
4.0  
-
-
-
-
-
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Output Return Loss RF (S22)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Isolation LO/RF @ LOx1  
Isolation LO/RF @ LOx2  
Output Third Order Intercept (OIP3)  
Drain Bias Voltage (Vd1,2)  
Gate Bias Voltage (Vg1,2)  
Gate Bias Voltage (Vg3,4) Mixer, Doubler  
10.0  
5.0  
2
+4.0  
TBD  
TBD  
+14.0  
+4.0  
-0.3  
-0.5  
160  
145  
-
-
-
dB  
1,2  
dBm  
VDC  
VDC  
VDC  
mA  
-
-
-1.2  
-1.2  
-
+5.5  
+0.1  
+0.1  
180  
165  
Supply Current (Id1) (Vd1=4.0V,Vg=-0.3V Typical)  
Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)  
-
mA  
(1) Measured using constant current.  
(2) Measured using LO Input drive level of 0.0 dBm.  
Page 1 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
32.0-45.0 GHz GaAs MMIC  
Transmitter  
October 2008 - Rev 16-Oct-08  
U1004-BD  
Transmitter Measurements  
XU1004-BD Vd1,2=4.0 V, Id1=160 mA, Id2=145 mA, USB  
LO=+0.0 dBm, IF=2.0 GHz @ -15.0 dBm, ~1310 Devices  
10  
9
8
7
6
5
4
3
2
1
0
-1  
-2  
-3  
-4  
-5  
30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0  
RF Frequency (GHz)  
Max  
Median  
Mean  
-3sigma  
XU1004-BD Vd1,2=4.0 V, Id1=160 mA, Id2=145 mA, LSB  
LO=+0.0 dBm, IF=2.0 GHz @ -15.0 dBm, ~1310 Devices  
10  
9
8
7
6
5
4
3
2
1
0
-1  
-2  
-3  
-4  
-5  
30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0  
RF Frequency (GHz)  
Max  
Median  
Mean  
-3sigma  
XU1004-BD Vd1,2=4.0 V, Id1=160 mA, Id2=145 mA, USB/LSB  
LO=+0.0 dBm, IF=2.0 GHz @ -15.0 dBm, ~1680 Devices  
0
-5  
-10  
-15  
-20  
-25  
-30  
30.0 31.0 32.0 33.0 34.0 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0  
RF Frequency (GHz)  
Max  
Median  
Mean  
-3sigma  
Page 2 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
32.0-45.0 GHz GaAs MMIC  
Transmitter  
October 2008 - Rev 16-Oct-08  
U1004-BD  
Mechanical Drawing  
0.921  
1.621  
2.220  
(0.036)  
(0.064)  
(0.087)  
1.620  
4
(0.064)  
3
2
0.646  
5
(0.025)  
0.295  
1
(0.012)  
10  
9
8
7
6
0.0  
0.921  
1.621  
2.021  
2.421  
2.821  
0.0  
3.970  
(0.036)  
(0.064)  
(0.080)  
(0.095)  
(0.111)  
(0.156)  
(Note: Engineering designator is 40TX0531)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.013 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.987 mg.  
Bond Pad #1 (RF Out) Bond Pad #3 (IF1)  
Bond Pad #5 (LO)  
Bond Pad #6 (Vg4)  
Bond Pad #7 (Vg2)  
Bond Pad #8 (Vg3)  
Bond Pad #7 (IF2)  
Bond Pad #8 (Vg1)  
Bond Pad #2 (Vd1)  
Bond Pad #4 (Vd2)  
Bias Arrangement  
Bypass Capacitors - See App Note [2]  
Vd1  
Vd2  
Vd2  
Vd1  
IF1  
IF1  
4
3
2
XU1004-BD  
LO  
5
LO  
RF  
Vg4  
RF  
1
10  
9
8
7
6
Vg2  
IF2  
Vg1  
Vg4  
Vg3  
IF2  
Vg1  
Vg2  
Vg3  
Page 3 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
32.0-45.0 GHz GaAs MMIC  
Transmitter  
October 2008 - Rev 16-Oct-08  
U1004-BD  
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd(1,2)=4.0V,  
Id1=160mA and Id2=145mA. Additionally, a mixer and doubler bias are also required with Vg3=Vg4=-0.5V. Adjusting Vg3 and Vg4 above or  
below this value can adversely affect conversion gain, LO/RF isolation and intercept point performance. It is also recommended to use active  
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the  
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational  
amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain  
correct drain current and thus drain voltage.The typical gate voltage needed to do this is -0.3V.Typically the gate is protected with Silicon  
diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying  
the positive drain supply.  
App Note [2] Bias Arrangement -  
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass  
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if  
gate or drains are tied together) of DC bias pads.  
For Individual Stage Bias -- Each DC pad (Vd1,2 and Vg1,2,3,4) needs to have DC bypass capacitance (~100-200 pF) as close to the device as  
possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.  
MTTFTables (TBD)  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
deg Celsius  
deg Celsius  
deg Celsius  
C/W  
C/W  
C/W  
E+  
E+  
E+  
E+  
E+  
E+  
Bias Conditions: Vd1=Vd2=4.0V, Id1=160 mA, Id2=145 mA  
Typical Application  
IF In  
2 GHz  
XP1005-BD  
XU1004-BD  
Coupler  
RF OUT  
37.0-39.5 GHz  
Mixer  
X
Buffer  
X2  
LO(+2.0dBm)  
17.5-18.75 GHz (USB Operation)  
19.5-20.75 GHz (LSB Operation)  
Mimix Broadband MMIC-based 32.0-45.0 GHz Receiver Block Diagram  
(Changing LO and IF frequencies as required allows design to operate as high as 45 GHz)  
Mimix Broadband's 32.0-45.0 GHz XU1004 GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation  
schemes up to 128 QAM.The receiver can be used in upper and lower sideband applications from 32.0-45.0 GHz.  
Page 4 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
32.0-45.0 GHz GaAs MMIC  
Transmitter  
October 2008 - Rev 16-Oct-08  
U1004-BD  
App Note [3] USB/LSB Selection -  
LSB  
USB  
For Upper Side Band operation (USB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (180º)  
respectively as shown in the diagram,  
the USB signal will reside on the  
isolated port. The input port must be  
loaded with 50 ohms.  
For Lower Side Band operation (LSB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (180º)  
respectively as shown in the diagram,  
the LSB signal will reside on the input  
port. The isolated port must be loaded  
with 50 ohms.  
IF2  
IF1  
An alternate method of Selection of USB or LSB:  
LSB  
In Phase Combiner  
-180º  
USB  
In Phase Combiner  
-180º  
IF2  
IF1  
IF2  
IF1  
Page 5 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
32.0-45.0 GHz GaAs MMIC  
Transmitter  
October 2008 - Rev 16-Oct-08  
U1004-BD  
Block Diagram  
Device Schematic  
Vd1  
IF1  
Vd2  
LO Buffer  
Vg2  
Output Amp  
Mixer  
Doubler  
LO Out LO In  
LO  
RF Out  
RF Out RF In  
RF  
LO  
LO Out  
LO In  
Vg5  
Vg1  
IF2 Vg3  
Page 6 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
32.0-45.0 GHz GaAs MMIC  
Transmitter  
October 2008 - Rev 16-Oct-08  
U1004-BD  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body  
and the environment. For safety, observe the following procedures:  
• Do not ingest.  
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical  
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
• Observe government laws and company regulations when discarding this product.This product must be  
discarded in accordance with methods specified by applicable hazardous waste procedures.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or  
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1)  
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support  
or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a  
life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic  
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices  
need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.  
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside  
to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting  
surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK  
or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting  
any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information  
please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless  
gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die  
bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a  
nitrogen atmosphere is recommended.The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC  
(Note: Gold Germanium should be avoided).The work station temperature should be 310 ºC +/- 10 ºC. Exposure to these  
extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive  
thermal shock. Avoidance of air bridges and force impact are critical during placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's  
gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold  
ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds  
are acceptable for DC Bias connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended  
though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and  
ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All  
bonds should be as short as possible.  
Ordering Information  
Part Number  
XU1004-BD-000V Where“V”is RoHS compliant die packed in vacuum release gel paks  
XU1004-BD-EV1 XU1004 die evaluation module  
Description  
Caution: ESD Sensitive  
Appropriate precautions in handling, packaging  
and testing devices must be observed.  
Proper ESD procedures should be followed when handling this device.  
Page 7 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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