CZDM1003N
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
www.centralsemi.com
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZDM1003N is a
3.0 Amp, 100 Volt silicon N-Channel enhancement-
mode MOSFET, designed for motor control and relay
driver applications. This MOSFET offers high current,
low r
, and low gate charge.
DS(ON)
MARKING: FULL PART NUMBER
SOT-223 CASE
FEATURES:
APPLICATIONS:
Motor control
Low r
•
•
•
•
•
•
DS(ON)
Relay driver
DC-DC converters
High current
Low gate charge
MAXIMUM RATINGS: (T =25°C)
Drain-Source Voltage
SYMBOL
UNITS
V
A
V
100
20
DS
Gate-Source Voltage
V
V
A
GS
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
I
3.0
D
I
12
A
DM
P
2.0
W
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-55 to +150
62.5
°C
°C/W
J
stg
Θ
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
=20V, V =0
MIN
TYP
MAX
100
UNITS
nA
I
, I
V
GSSF GSSR GS
DS
I
V
V
V
V
V
V
V
V
V
V
V
V
=100V, V =0
1.0
μA
V
DSS
DS
GS
=0, I =250μA
BV
100
2.0
DSS
GS(th)
SD
GS
D
V
V
=V , I =250μA
4.0
1.3
150
70
V
GS DS
D
=0, I =3.0A
V
GS
GS
DS
DS
DS
DS
DS
DS
DD
S
r
=10V, I =2.0A
70
55
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
DS(ON)
D
C
C
C
=25V, V =0, f=1.0MHz
rss
iss
GS
=25V, V =0, f=1.0MHz
GS
705
55
975
80
=25V, V =0, f=1.0MHz
oss
GS
Q
Q
Q
=80V, V =10V, I =9.2A
GS
15
g(tot)
gs
D
=80V, V =10V, I =9.2A
3.0
5.5
40
GS
D
=80V, V =10V, I =9.2A
gd
GS
D
t
t
=50V, V =10V, I =9.2A
80
on
off
GS
D
R =18Ω
60
155
G
R1 (21-January 2013)
