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QVE00034

型号：

QVE00034

描述：

光电晶体管光断续器开关[ PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH ]

品牌：

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数：

5 页

PDF大小：

481 K

下载PDF手册
PHOTOTRANSISTOR OPTICAL  
INTERRUPTER SWITCH  
QVE00034  
PACKAGE DIMENSIONS  
0.697 (17.70)  
D
0.236 (6.00)  
0.020 (0.50)  
C
L
E
C
L
0.315 (8.00)  
0.039 X 45°  
CHAMFER (2X)  
C
L
OPTICAL  
C.L.  
0.059 (1.50)  
(2X)  
0.394 (10.00)  
0.138 (3.51)  
0.295 (7.50)  
0.079 (2.00)  
0.030 (0.76)  
0.197 (5.00)  
0.543 [13.79]  
PINS  
0.020 (0.51) (4X)  
SQ. (TYP)  
C
SCHEMATIC  
L
0.333 (8.46)  
0.100 (2.54)  
(2X) (TYP)  
1
4
0.093 (2.36)  
PIN #1 (ANODE)  
PIN #2 (CATHODE)  
PIN #3 (COLLECTOR)  
PIN #4 (EMITTER)  
NOTES:  
1. Dimensions for all drawings are in inches (millimeters).  
2. Tolerance of .010 (.25) on all non-nominal dimensions  
unless otherwise specified.  
2
3
DESCRIPTION  
The QVE00034 is a slotted optical switch designed for multipurpose non-contact sensing. It consists of a GaAs LED and a silicon  
photo-transistor packaged into an injection molded housing and facing each other across a 0.315" (8.0 mm) gap. The housing is  
featuring locating knobs for accurate mounting.  
FEATURES  
• No contact switching  
• 8mm wide slot  
• 0.5 mm aperture width  
• Opaque black plastic housing  
• Locating knobs on housing base for accurate mounting  
• Transistor Output  
© 2003 Fairchild Semiconductor Corporation  
Page 1 of 5  
4/14/03  
PHOTOTRANSISTOR OPTICAL  
INTERRUPTER SWITCH  
QVE00034  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
A
Parameter  
Symbol  
Rating  
Units  
T
Operating Temperature  
Storage Temperature  
-55 to +100  
-55 to +100  
°C  
°C  
°C  
°C  
OPR  
T
STG  
(2,3,4)  
(2,3)  
T
240 for 5 sec  
260 for 10 sec  
Soldering Temperature (Iron)  
SOL-I  
T
Soldering Temperature (Flow)  
EMITTER  
SOL-F  
I
Continuous Forward Current  
50  
6
mA  
V
F
V
Reverse Voltage  
R
(1)  
P
100  
mW  
Power Dissipation  
D
SENSOR  
V
Collector-Emitter Voltage  
30  
4.5  
20  
V
V
CEO  
V
Emitter-Collector Voltage  
Collector Current  
ECO  
I
mA  
mW  
C
(1)  
P
150  
Power Dissipation  
D
NOTES  
1. Derate power dissipation linearly 1.67 mW/°C above 25°C.  
2. RMA flux is recommended.  
3. Methanol or isopropyl alcohols are recommended as cleaning agents.  
4. Soldering iron tip 1/16" (1.6mm) from housing.  
ELECTRICAL/OPTICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
MIN  
TYP  
MAX  
UNITS  
EMITTER  
I = 20 mA  
V
Forward Voltage  
—
—
—
1.2  
—
1.5  
10  
—
V
F
F
V = 4 V  
I
Reverse Current  
µA  
nm  
R
R
I = 20 mA  
λ
Peak Emission Wavelength  
940  
F
PE  
SENSOR  
V
V
= 10 V, I = 0 mA  
—
—
—
—
200  
3
nA  
µA  
CE  
F
I
Dark Current  
D
= 2.5 V, I = 0 mA, T = -40°C to +85°C  
CE  
F
A
COUPLED  
I = 20 mA, V = 10 V  
I
Collector Current  
0.5  
—
—
—
14  
mA  
V
F
CE  
C(ON)  
I = 20 mA, I = 0.1 mA  
Collector Emitter Saturation  
Voltage  
F
C
V
0.4  
CE (SAT)  
T = -40°C to +85°C  
A
t
Rise Time  
Fall Time  
—
—
4
4
—
—
V
= 5 V, R = 100 Ω  
L
r
CC  
µs  
I = 5 µA  
t
C
f
© 2003 Fairchild Semiconductor Corporation  
Page 2 of 5  
4/14/03  
PHOTOTRANSISTOR OPTICAL  
INTERRUPTER SWITCH  
QVE00034  
TYPICAL PERFORMANCE CURVES  
Fig. 1 Collector Current vs. Shield Distance  
Fig. 2 Collector Current vs. Shield Distance  
1.0  
1.0  
TA=25°C  
TA=25°C  
IF=20mA  
IF=20mA  
Normalized to  
value with shield  
removed  
Normalized to  
value with shield  
removed  
V
CE=5V  
V
CE=5V  
0.8  
0.6  
0.4  
0.2  
0.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Black Shield  
Black Shield  
+
E
D
+
d2  
0
d1  
0
0
1
2
3
4
5
6
0
2
4
6
8
d2-Shield Distance(mm)  
d1-Shield Distance(mm)  
Fig. 3 Collector-Emitter Voltage vs. Collector Current  
Fig. 4 Collector-Emitter Voltage vs.Temperature  
5
1.9  
T
A
= 25˚C  
I
= 20 mA, I = 0.1 mA  
C
I
= 40 mA  
= 30 mA  
F
F
F
4.5  
4
1.4  
1.2  
1
I
F
= 10 mA, I = 0.05 mA  
C
I
3.5  
3
2.5  
2
I
= 20 mA  
F
0.8  
0.6  
0.4  
0.2  
0
I
= 30 mA, I = 0.15 mA  
C
F
I
F
= 10 mA  
Normalized to  
= 20 mA, I = 0.1 mA, T = 25˚C  
1.5  
I
F
C
A
1
0.5  
0
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
-50  
-25  
0
25  
50  
75  
100  
V
(V)  
TEMP(C)  
CE  
© 2003 Fairchild Semiconductor Corporation  
Page 3 of 5  
4/14/03  
PHOTOTRANSISTOR OPTICAL  
INTERRUPTER SWITCH  
QVE00034  
Fig. 5 Collector Current vs.Temperature  
Fig. 6 Collector Current vs. Forward Current  
3
5
4.5  
4
I
= 100 mA  
F
Normalized to  
= 20 mA, V  
I
= 5 V, T = 25˚C  
A
2.5  
F
CE  
I
= 60 mA  
= 30 mA  
3.5  
3
F
2
2.5  
2
1.5  
T
V
= 25˚C  
= 10 V  
CE  
A
I
F
Normalized to  
= 20 mA  
1
0.5  
0
1.5  
1
I
F
I
= 20 mA  
F
I
= 10 mA  
F
0.5  
0
I
F
= 5 mA  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
-55  
-40  
-20  
0
20  
40  
60  
80  
100  
Temp(C)  
I
(mA)  
F
Fig. 7 Rise Time vs. Load Resistance  
Fig. 8 Fall Time vs. Load Resistance  
1.1  
4.5  
4.25  
4
3.75  
3.5  
3.25  
3
2.75  
2.5  
2.25  
2
1.75  
1.5  
1.25  
1
1.05  
TA = 25˚C  
1
0.95  
0.9  
PW = 300 µs  
PRR = 100 µs  
VCC = 5 V  
T(on)  
Normalized  
to RL = 2k Ω  
0.85  
0.8  
T
= 25˚C  
A
PW = 300 µs  
PRR = 100 µs  
= 5 V  
T(off)  
0.75  
0.7  
V
CC  
Normalized  
to RL = 2k Ω  
0.65  
0.6  
0.75  
0.5  
0.25  
0
0.55  
0.5  
1
2
3
4
5
6
7
8
9
10  
1
2
3
4
5
6
7
8
9
10  
RL(kΩ)  
R (kΩ)  
L
Fig. 9 Forward Voltage vs. Forward Current  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
= 30˚C  
A
T
T
= 25˚C  
= 70˚C  
A
A
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
V (V)  
F
© 2003 Fairchild Semiconductor Corporation  
Page 4 of 5  
4/14/03  
PHOTOTRANSISTOR OPTICAL  
INTERRUPTER SWITCH  
QVE00034  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO  
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME  
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body, or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in a significant injury of the user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
© 2003 Fairchild Semiconductor Corporation  
Page 5 of 5  
4/14/03  
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