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XU1003-BD-000V

型号:

XU1003-BD-000V

描述:

19.0-26.0 GHz的砷化镓MMIC变送器[ 19.0-26.0 GHz GaAs MMIC Transmitter ]

品牌:

MIMIX[ MIMIX BROADBAND ]

页数:

7 页

PDF大小:

220 K

19.0-26.0 GHz GaAs MMIC  
Transmitter  
August 2007 - Rev 20-Aug-07  
U1003-BD  
Features  
Chip Device Layout  
Sub-harmonic Transmitter  
Integrated IR Mixer, LO Buffer & Output Amplifier  
2.0 dBm LO Drive Level  
15.0 dB Image Rejection, 10.0 dB Conversion Gain  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s 19.0-26.0 GHz GaAs MMIC transmitter has a  
+20.0 dBm output third order intercept and 15.0 dB image  
rejection across the band.This device is an image reject  
sub-harmonic anti-parallel diode mixer followed by a balanced  
two stage output amplifier and includes an integrated LO buffer  
amplifier.The image reject mixer reduces the need for  
unwanted sideband filtering before the power amplifier.The  
use of a sub-harmonic mixer makes the provision of the LO  
easier than for fundamental mixers at these frequencies. I and Q  
mixer inputs are provided and an external 90 degree hybrid is  
required to select the desired sideband.This MMIC uses Mimix  
Broadband’s 0.15 µm GaAs PHEMT device model technology,  
and is based upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface passivation to  
protect and provide a rugged part with backside via holes and  
gold metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+5.0 VDC  
Supply Current (Id1,Id2)  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
320, 165 mA  
+0.5 VDC  
0.0 dBm  
-65 to +165 OC  
1
-55 to MTTF Table  
1
MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Min.  
19.0  
19.0  
8.0  
DC  
-
-
-
-
-
-
-
Typ.  
-
-
-
-
14.0  
10.0  
+2.0  
15.0  
-12.0  
TBD  
+4.0  
+4.0  
-0.1  
230  
116  
Max.  
26.0  
26.0  
14.5  
3.0  
-
-
-
-
-
Frequency Range (IF)  
Output Return Loss RF (S22)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Image Rejection  
Isolation 2xLO to RF  
Output Third Order Intercept (OIP3)  
Drain Bias Voltage (Vd1)  
Drain Bias Voltage (Vd2)  
Gate Bias Voltage (Vg1,2)  
Supply Current (Id1) (Vd1=4.0V,Vg=-0.1V Typical)  
Supply Current (Id2) (Vd2=4.0V,Vg=-0.1V Typical)  
dB  
dBm  
dBc  
dB  
dBm  
VDC  
VDC  
VDC  
mA  
-
+4.5  
+4.5  
+0.3  
280  
140  
-
-1.2  
-
-
mA  
Page 1 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
19.0-26.0 GHz GaAs MMIC  
Transmitter  
August 2007 - Rev 20-Aug-07  
U1003-BD  
Transmitter Measurements  
XU1003-BD: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, USB  
XU1003-BD: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, USB  
LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices  
LO = + 2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices  
20  
0
-5  
18  
16  
14  
12  
10  
8
-10  
-15  
-20  
-25  
-30  
-35  
-40  
6
4
2
0
19  
20  
21  
22  
23  
24  
25  
26  
19  
20  
21  
22  
23  
24  
25  
26  
RF Frequency (GHz)  
RF Frequency (GHz)  
Max  
Median  
Mean  
-3sigma  
Max  
Median  
Mean  
-3sigma  
XU1003-BD: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, LSB  
LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices  
XU1003-BD: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA, LSB  
LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices  
20  
18  
16  
14  
12  
10  
8
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
6
4
2
0
19  
20  
21  
22  
RF Frequency (GHz)  
Median Mean  
23  
24  
25  
26  
19  
20  
21  
22  
23  
24  
25  
26  
RF Frequency (GHz)  
Max  
-3sigma  
Max  
Median  
Mean  
-3sigma  
XU1003-BD: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA,  
LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices  
XU1003-BD: Vd1 = 4 V, Vd2 = 4 V, Id1 = 230 mA, Id2 = 216 mA,  
LO = +2 dBm, IF = 2 GHz, IF = -15 dBm, ~125 devices  
0
0
-5  
-2  
-4  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
-20  
19  
20  
21  
22  
23  
24  
25  
26  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
RF Frequency (GHz)  
2xLO Frequency (GHz)  
Max  
Median  
Mean  
-3sigma  
Max  
Median  
Mean  
-3sigma  
Page 2 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
19.0-26.0 GHz GaAs MMIC  
Transmitter  
August 2007 - Rev 20-Aug-07  
U1003-BD  
1.678  
2.478  
3.278  
Mechanical Drawing  
(0.066)  
(0.098)  
(0.129)  
1.945  
(0.077)  
4
2
3
1.608  
1
(0.063)  
1.487  
5
(0.059)  
10  
9
8
7
6
0.0  
1.678  
2.478  
3.077 3.278  
(0.121) (0.129)  
3.677  
3.970  
0.0  
(0.066)  
(0.098)  
(0.145)  
(0.156)  
(Note: Engineering designator is 22TX0523)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008).  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.787 mg.  
Bond Pad #1 (RF Out) Bond Pad #3 (IF1)  
Bond Pad #5 (LO)  
Bond Pad #6 (Vg2b)  
Bond Pad #7 (Vg2)  
Bond Pad #8 (Vg2a)  
Bond Pad #9 (IF2)  
Bond Pad #10 (Vg1)  
Bond Pad #2 (Vd1)  
Bond Pad #4 (Vd2)  
Bias Arrangement  
Bypass Capacitors - See App Note [2]  
Vd2  
Vd1  
Vd2  
IF1  
IF1  
Vd1  
4
2
3
1
RF  
RF  
5
LO  
LO  
XU1003-BD  
10  
9
8
7
6
IF2  
Vg1  
Vg2  
IF2  
Vg2  
Vg1  
Page 3 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
19.0-26.0 GHz GaAs MMIC  
Transmitter  
August 2007 - Rev 20-Aug-07  
U1003-BD  
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2  
with Vd1=4.0V, Id1=230mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents  
constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply  
voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power  
operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the  
pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed to do this  
is -0.3V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the  
applied voltage to ensure negative gate bias is available before applying the positive drain supply.  
App Note [2] Bias Arrangement - Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF)  
as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.  
MTTFTables (TBD)  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
deg Celsius  
deg Celsius  
deg Celsius  
C/W  
C/W  
C/W  
E+  
E+  
E+  
E+  
E+  
E+  
Bias Conditions: Vd1=4.0V,Vd2=4.0V, Id1=230 mA, Id2=116 mA  
Typical Application  
XP1013-BD  
XU1003-BD  
XB1004-BD  
Sideband  
Reject  
RF Out  
21.2-23.6 GHz  
IF IN  
2 GHz  
LO(+2.0dBm)  
9.6-10.8 GHz (USB Operation)  
11.6-12.8 GHz (LSB Operation)  
Mimix Broadband MMIC-based 19.0-26.0 GHz Transmitter Block Diagram  
(Changing LO and IF frequencies as required allows design to operate as high as 26 GHz)  
Mimix Broadband's 19.0-26.0 GHz XU1003-BD GaAs MMIC Transmitter can be used in saturated radio applications and  
linear modulation schemes up to 16 QAM.The transmitter can be used in upper and lower sideband applications from  
19.0-26.0 GHz.  
Page 4 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
19.0-26.0 GHz GaAs MMIC  
Transmitter  
August 2007 - Rev 20-Aug-07  
U1003-BD  
App Note [3] USB/LSB Selection -  
LSB  
USB  
For Upper Side Band operation (USB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the USB signal will reside on the  
isolated port. The input port must be  
loaded with 50 ohms.  
For Lower Side Band operation (LSB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the LSB signal will reside on the input  
port. The isolated port must be loaded  
with 50 ohms.  
IF2  
IF1  
An alternate method of Selection of USB or LSB:  
LSB  
In Phase Combiner  
-90o  
USB  
In Phase Combiner  
-90o  
IF2  
IF1  
IF2  
IF1  
Page 5 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
19.0-26.0 GHz GaAs MMIC  
Transmitter  
August 2007 - Rev 20-Aug-07  
U1003-BD  
Device Schematic  
Block Diagram  
Vd1  
IF1  
Vd2  
LO Buffer  
Vg2  
Output Amp  
IR Mixer  
RF Out  
RF Out  
RF In  
RF  
LO  
LO Out  
LO In  
LO  
Vg1  
IF2  
Page 6 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
19.0-26.0 GHz GaAs MMIC  
Transmitter  
August 2007 - Rev 20-Aug-07  
U1003-BD  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the  
environment. For safety, observe the following procedures:  
• Do not ingest.  
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these  
by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
• Observe government laws and company regulations when discarding this product.This product must be discarded in accordance  
with methods specified by applicable hazardous waste procedures.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or  
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life  
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain  
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or  
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic  
containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need  
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.  
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to  
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The mounting surface should  
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured  
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the  
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy  
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately  
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and  
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin  
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work station  
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.The collet should be  
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during  
placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond  
pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%  
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias  
connections. Aluminum wire should be avoided.Thermo-compression bonding is recommended though thermosonic bonding may  
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds  
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.  
Ordering Information  
Part Number for Ordering  
XU1003-BD-000V  
XU1003-BD-EV1  
Description  
Where“V”is RoHS compliant die packed in vacuum release gel paks  
XU1003 die evaluation module  
Page 7 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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