请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

XU1005-BD-000V

型号：

XU1005-BD-000V

描述：

10.0-18.0 GHz的砷化镓MMIC变送器[ 10.0-18.0 GHz GaAs MMIC Transmitter ]

品牌：

MIMIX[ MIMIX BROADBAND ]

页数：

8 页

PDF大小：

363 K

下载PDF手册
10.0-18.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1005-BD  
Features  
Chip Device Layout  
Integrated Mixer, LO Buffer and Output Amplifier  
8 dB Conversion Gain  
15 dB Image Rejection  
+17 dBm OIP3  
+6 dBm LO Drive Level  
-12 dBm LO Leakage Power  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
XU1005-BD  
General Description  
Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17  
dBm output third order intercept and 15 dB image rejection across the  
band. This device is an image reject, balanced mixer followed by a two  
stage output amplifier. The image reject mixer reduces the need for  
unwanted sideband filtering before the power amplifier. I and Q mixer  
inputs are provided and an external 90 degree hybrid is required to  
select the desired sideband.This MMIC uses Mimix Broadband’s 0.15  
µm GaAs PHEMT device model technology, and is based upon electron  
beam lithography to ensure high repeatability and uniformity.The chip  
has surface passivation to protect and provide a rugged part with  
backside via holes and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This device is well suited  
for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (IF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
250,150,250 mA  
+0.3 VDC  
0.0 dBm  
-65 to +165 OC  
1
-55 to MTTF Table  
1
MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (LO)  
Min.  
10.0  
7.0  
DC  
-
-
-
-
-
-
-
-
Typ.  
-
-
Max.  
18.0  
21.0  
3.0  
-
-
-
-
-
+5.5  
-
-
+0.1  
200  
100  
200  
200  
Units  
GHz  
GHz  
GHz  
dB  
dB  
dBm  
dB  
dBm  
VDC  
VDC  
VDC  
VDC  
mA  
Frequency Range (IF)  
-
Output Return Loss RF (S22)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
Isolation LO/RF  
Output Third Order Intercept (OIP3)  
Drain Bias Voltage (Vd1,2,3)  
Source Bias Voltage (Vs1)  
Gate Bias Voltage (Vg1), Mixer  
Gate Bias Voltage (Vg2,3)  
Supply Current (Id1) (Vd1=5.0V)  
Supply Current (Id2) (Vd2=5.0V,Vg=-0.1V Typical)  
Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical)  
Supply Current (Iss) (Vss=-5.0V)  
18.0  
9.0  
+6.0  
18.0  
+17.0  
+5.0  
-5.0  
-0.6  
-0.1  
140  
70  
-1.2  
-
-
-
-
mA  
mA  
mA  
140  
140  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
10.0-18.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1005-BD  
Transmitter Measurements  
C onv. G ain / Image R ejection  
USB, IF = 2 G Hz, LO = +6 dBm  
C onv. G ain / Image R ejection  
LSB, IF = 2 G Hz, LO = +6 dBm  
20  
15  
10  
5
20  
15  
10  
5
0
0
-5  
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-35  
Conv. G ain  
LSB Conv Gain  
Image Re ject  
-40  
Image Rej ect  
-45  
-50  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
R F (GHz )  
R F (GHz )  
LS B, IF = 2 GH z, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,  
+6 dBm and +8 dBm , 3 0 May 2005: OIP3 avg (dBm ) vs . RF (GHz )  
US B, IF = 2 G Hz, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,  
+6 dBm and +8 dBm , 3 0 May 2005: OIP3 avg (dBm ) vs . RF (GHz )  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
OIP3, PL O (dBm)=4, RC=R1 0C6  
OIP3, PL O (dBm)=4, RC=R1 1C5  
OIP3, PL O (dBm)=4, RC=R1 1C7  
OIP3, PL O (dBm)=4, RC=R1 2C4  
OIP3, PL O (dBm)=6, RC=R1 0C6  
OIP3, PL O (dBm)=6, RC=R1 1C5  
OIP3, PL O (dBm)=6, RC=R1 1C7  
OIP3, PL O (dBm)=6, RC=R1 2C4  
OIP3, PL O (dBm)=8, RC=R1 0C6  
OIP3, PL O (dBm)=8, RC=R1 1C5  
OIP3, PL O (dBm)=8, RC=R1 1C7  
OIP3, PL O (dBm)=8, RC=R1 2C4  
OIP3, PL O (dBm)=4, RC=R1 0C6  
OIP3, PL O (dBm)=4, RC=R1 1C5  
OIP3, PL O (dBm)=4, RC=R1 1C7  
OIP3, PL O (dBm)=4, RC=R1 2C4  
OIP3, PL O (dBm)=6, RC=R1 0C6  
OIP3, PL O (dBm)=6, RC=R1 1C5  
OIP3, PL O (dBm)=6, RC=R1 1C7  
OIP3, PL O (dBm)=6, RC=R1 2C4  
OIP3, PL O (dBm)=8, RC=R1 0C6  
OIP3, PL O (dBm)=8, RC=R1 1C5  
OIP3, PL O (dBm)=8, RC=R1 1C7  
OIP3, PL O (dBm)=8, RC=R1 2C4  
0
0
-5  
-5  
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22  
RF (G Hz)  
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22  
RF (G Hz)  
LS B, IF = 2 GH z, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,  
+6 dBm and +8 dBm , 3 0 May 2005: IIP3 avg (dBm ) vs . RF (GHz )  
US B, IF = 2 G Hz, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,  
+6 dBm and +8 dBm , 3 0 May 2005: IIP3 avg (dBm ) vs . RF (GHz )  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
IIP3, PL O (dBm)=4, R C =R10C6  
IIP3, PL O (dBm)=4, R C =R10C6  
IIP3, PL O (dBm)=4, R C =R11C5  
IIP3, PL O (dBm)=4, R C =R11C7  
IIP3, PL O (dBm)=4, R C =R12C4  
IIP3, PL O (dBm)=6, R C =R10C6  
IIP3, PL O (dBm)=6, R C =R11C5  
IIP3, PL O (dBm)=6, R C =R11C7  
IIP3, PL O (dBm)=6, R C =R12C4  
IIP3, PL O (dBm)=8, R C =R10C6  
IIP3, PL O (dBm)=8, R C =R11C5  
IIP3, PL O (dBm)=8, R C =R11C7  
IIP3, PL O (dBm)=8, R C =R12C4  
IIP3, PL O (dBm)=4, R C =R11C5  
IIP3, PL O (dBm)=4, R C =R11C7  
IIP3, PL O (dBm)=4, R C =R12C4  
IIP3, PL O (dBm)=6, R C =R10C6  
IIP3, PL O (dBm)=6, R C =R11C5  
IIP3, PL O (dBm)=6, R C =R11C7  
IIP3, PL O (dBm)=6, R C =R12C4  
IIP3, PL O (dBm)=8, R C =R10C6  
IIP3, PL O (dBm)=8, R C =R11C5  
IIP3, PL O (dBm)=8, R C =R11C7  
IIP3, PL O (dBm)=8, R C =R12C4  
0
0
-5  
-5  
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22  
RF (GH z)  
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22  
RF (GH z)  
Page 2 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
10.0-18.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1005-BD  
Transmitter Measurements (cont.)  
LS B, IF = 2 GH z, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,  
+6 dB m a nd +8 dB m, 30 May 2005: LO ISO ( dB) vs . RF (GH z)  
US B, IF = 2 G Hz, IF1 - IF 2 = 100 MHz, PIFs cl = -10 dBm , PL O = +4 dB m,  
+6 dB m a nd +8 dB m, 30 May 2005: LO ISO ( dB) vs . RF (GH z)  
0
-5  
0
-5  
-10  
-15  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
O
O
O
O
O
O
O
O
O
O
O
O
(dBm)=4, R C =R10C6  
(dBm)=4, R C =R11C5  
(dBm)=4, R C =R11C7  
(dBm)=4, R C =R12C4  
(dBm)=6, R C =R10C6  
(dBm)=6, R C =R11C5  
(dBm)=6, R C =R11C7  
(dBm)=6, R C =R12C4  
(dBm)=8, R C =R10C6  
(dBm)=8, R C =R11C5  
(dBm)=8, R C =R11C7  
(dBm)=8, R C =R12C4  
LO/R F, PL  
O
O
O
O
O
O
O
O
O
O
O
O
(dBm)=4, R C =R10C6  
(dBm)=4, R C =R11C5  
(dBm)=4, R C =R11C7  
(dBm)=4, R C =R12C4  
(dBm)=6, R C =R10C6  
(dBm)=6, R C =R11C5  
(dBm)=6, R C =R11C7  
(dBm)=6, R C =R12C4  
(dBm)=8, R C =R10C6  
(dBm)=8, R C =R11C5  
(dBm)=8, R C =R11C7  
(dBm)=8, R C =R12C4  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
LO/R F, PL  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22  
RF ( GHz )  
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22  
RF ( GHz )  
Page 3 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
10.0-18.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1005-BD  
Mechanical Drawing  
0.169  
0.569  
1.169  
1.968  
2.368  
(0.007)  
(0.022)  
(0.046)  
(0.077)  
(0.093)  
2.200  
(0.087)  
2
4
5
6
3
1.824  
(0.072)  
7
1.100  
1
(0.043)  
10  
9
8
12  
11  
0.0  
0.169  
0.569  
1.169  
1.968  
2.368  
3.200  
(0.126)  
0.0  
(0.007) (0.022)  
(0.046)  
(0.077)  
(0.093)  
(Note: Engineering designator is 14TX0614)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008).  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.36 mg.  
Bond Pad #1 (LO)  
Bond Pad #2 (Vg1)  
Bond Pad #3 (Vd1A) Bond Pad #5 (Vg2)  
Bond Pad #7 (RF)  
Bond Pad #8 (Vd3) Bond Pad #10 (IF2)  
Bond Pad #9 (Vd2)  
Bond Pad #11 (Vd1B)  
Bond Pad #12 (Vg1)  
Bond Pad #4 (IF1)  
Bond Pad #6 (Vg3)  
Bias Arrangement  
Bypass Capacitors - See App Note [2]  
Vd1A  
Vg1  
Vg2,3  
IF1  
2
4
5
6
3
RF  
7
LO  
1
XU1005-BD  
10  
9
8
12  
11  
IF2  
Vg1  
Vd2,3  
Vd1B  
Page 4 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
10.0-18.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1005-BD  
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd(1,2,3)=5.0V,  
Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA and Is1=140mA. Additionally, a mixer is also required with Vg1=-0.6V.  
Adjusting Vg1 above or below this value can adversely affect conversion gain, LO/RF isolation and intercept point  
performance. Gain control can be adjusted by varying Vg2,3 from 0.0 to -1.2 V with 0.0V providing minimum  
attenuation and -1.2 V providing maximum attenuation. It is also recommended to use active biasing to keep the  
currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the  
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power  
operational amplifier, with a low value resistor in series with the drain supply used to sense the current.The gate of the  
pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate voltage needed to do this  
is -0.2V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the  
applied voltage to ensure negative gate bias is available before applying the positive drain supply.  
App Note [2] Bias Arrangement -  
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or  
gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also  
recommended to all DC or combination (if gate or drains are tied together) of DC bias pads.  
For Individual Stage Bias -- Each DC pad (Vd1,2,3,Vss, and Vg1,2,3) needs to have DC bypass capacitance (~100-200 pF)  
as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.  
MTTFTables (TBD)  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
deg Celsius  
deg Celsius  
deg Celsius  
C/W  
C/W  
C/W  
E+  
E+  
E+  
E+  
E+  
E+  
Bias Conditions: Vd1=Vd2=Vd3=5.0V,Vss=-5.0V, Id1=140mA, Id2=70mA, Id3=140mA, Is1=140mA  
Page 5 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
10.0-18.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1005-BD  
App Note [3] USB/LSB Selection -  
LSB  
USB  
For Upper Side Band operation (USB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the USB signal will reside on the  
isolated port.The input port must be  
loaded with 50 ohms.  
For Lower Side Band operation (LSB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (90º)  
respectively as shown in the diagram,  
the LSB signal will reside on the input  
port.The isolated port must be loaded  
with 50 ohms.  
IF2  
IF1  
An alternate method of Selection of USB or LSB:  
LSB  
USB  
In Phase Combiner  
In Phase Combiner  
-90o  
-90o  
IF2  
IF1  
IF2  
IF1  
Page 6 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
10.0-18.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1005-BD  
Device Schematic  
Page 7 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
10.0-18.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1005-BD  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the  
human body and the environment. For safety, observe the following procedures:  
Do not ingest.  
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical  
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
Observe government laws and company regulations when discarding this product.This product must be  
discarded in accordance with methods specified by applicable hazardous waste procedures.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support  
devices or systems without the express written approval of the President and General Counsel of Mimix  
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for  
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a  
significant injury to the user. (2) A critical component is any component of a life support device or system whose  
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied  
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-  
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,  
sharp tweezers.  
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the  
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The  
mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die  
Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy  
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die  
periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If  
eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the  
die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action  
to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin eutectic  
(80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work  
station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.  
The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force  
impact are critical during placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to  
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x  
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm  
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be  
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing  
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.  
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short  
as possible.  
Ordering Information  
Part Number  
Description  
XU1005-BD-000V  
Where“V”is RoHS compliant die packed in vacuum release gel paks  
XU1005-BD-EV1  
XU1005 die evaluation module  
Page 8 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
厂商 型号 描述 页数 下载

ETC

 		XU1-N18PP340 REFLEXLICHTTASTER VERDRAHTET RLS INLINE\n[ REFLEXLICHTTASTER VERDRAHTET RLS INLINE ] 4 页

ETC

 		XU1-N18PP340W REFLEXLICHTTASTER VERDRAHTET RLS 90\n[ REFLEXLICHTTASTER VERDRAHTET RLS 90 ] 4 页

MIMIX

 		XU1000 17.0-27.0 GHz的砷化镓MMIC变送器[ 17.0-27.0 GHz GaAs MMIC Transmitter ] 5 页

MIMIX

 		XU1000-BD-000W [ Up Converter, ROHS COMPLIANT, PLASTIC, DIE-5 ] 5 页

MIMIX

 		XU1001 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1001-BD 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1001-BD-000V 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1001-BD-000W 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1001-BD-EV1 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1002 18.0-25.0 GHz的砷化镓MMIC变送器[ 18.0-25.0 GHz GaAs MMIC Transmitter ] 8 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.181854s