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XU1009-BD

型号：

XU1009-BD

描述：

18.0-36.0 GHz的砷化镓MMIC变送器[ 18.0-36.0 GHz GaAs MMIC Transmitter ]

品牌：

MIMIX[ MIMIX BROADBAND ]

页数：

9 页

PDF大小：

281 K

下载PDF手册
18.0-36.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1009-BD  
Features  
Chip Device Layout  
Sub-harmonic Transmitter  
Integrated Mixer, LO Doubler/Buffer & Output Amplifier  
+25.0 dBm Output Third Order Intercept (OIP3)  
35.0 dB Gain Control  
2.0 dBm LO Drive Level  
9.0 dB Conversion Gain  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
XU1009-BD  
General Description  
Mimix Broadband’s 18.0-36.0 GHz GaAs MMIC transmitter has a +25.0  
dBm output third order intercept across the band.This device is a  
balanced resistive pHEMT mixer followed by a distributed amplifier  
and includes an integrated LO doubler and LO buffer amplifier.The use  
of integrated LO doubler and LO buffer amplifier makes the provision  
of the LO easier than for fundamental mixers at these frequencies. IF  
and IF mixer inputs are provided through an external 180 degree  
hybrid.This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT  
device model technology, and is based upon electron beam  
lithography to ensure high repeatability and uniformity.The chip has  
surface passivation to protect and provide a rugged part with backside  
via holes and gold metallization to allow either a conductive epoxy or  
eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
320,190,110 mA  
+0.3 VDC  
Input Power (IF Pin)  
0.0 dBm  
-65 to +165 OC  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
(1) Measured using constant current.  
3
-55 to MTTF Table  
3
MTTF Table  
(2) Measured using LO Input drive level of +2.0 dBm.  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
dB  
dBm  
dB  
Min.  
18.0  
18.0  
8.0  
DC  
-
-
-
-
-
-
-
Typ.  
-
-
-
-
Max.  
36.0  
36.0  
19.5  
3.0  
-
-
-
-
-
Frequency Range (IF)  
Output Return Loss RF (S22)  
Small Signal Conversion Gain IF/RF (S21)  
LO Input Drive (PLO)  
14.0  
9.0  
+2.0  
15.0  
5.0  
+25.0  
+5.0  
-5.0  
-0.2  
-0.5  
230  
140  
75  
2
Isolation LO/RF @ LOx1  
Isolation LO/RF @ LOx2  
Output Third Order Intercept (OIP3)  
dB  
1,2  
dBm  
VDC  
VDC  
VDC  
VDC  
mA  
-
Drain Bias Voltage (Vd1,2,3)  
Source Bias Voltage (Vss)  
Gate Bias Voltage (Vg1,2)  
+5.5  
-
-
-1.2  
-1.2  
-
-
-
-
+0.1  
+0.1  
280  
170  
90  
60  
Gate Bias Voltage (Vg3,4) Doubler, Mixer  
Supply Current (Id1) (Vd1=5.0V,Vg=-0.2V Typical)  
Supply Current (Id2) (Vd2=5.0V,Vg=-0.1V Typical)  
Supply Current (Id3) (Vd3=5.0V,Vg=-0.5V Typical)  
Supply Current (Iss) (Vss=-5.0V)  
mA  
mA  
mA  
50  
Page 1 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
18.0-36.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1009-BD  
Transmitter Measurements  
XU1009-BD_5samples: USB Conversion gain (dB) vs. RF USB (GHz)  
IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm  
XU1009-BD_samples: LSB Conversion gain (dB) vs. RF LSB (GHz)  
IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm  
20  
18  
16  
20  
18  
16  
14  
12  
10  
8
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13  
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13  
14  
12  
10  
8
6
6
4
4
2
2
0
0
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
RF USB (GHz)  
RF LSB (GHz)  
XU1009-BD_5samples: LO to RF gain (dB) vs. LO freq (GHz)  
IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm  
XU1009-BD_5samples: LOx2 to RF gain (dB) vs. LO freq (GHz)  
IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm  
5
20  
15  
10  
5
0
-5  
,
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13  
,
,
,
,
,
,
,
,
,
,
,
,
,
,
-10  
-15  
-20  
-25  
-30  
-35  
-40  
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=0, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13  
0
-5  
-10  
-15  
-20  
-25  
-30  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
LO freq (GHz)  
LO freq (GHz)  
XU1009-BD_4samples: OIP3 and IIP3 (dBm) vs. RF USB (GHz)  
IF1_ONLY = -3dBm per Tone, 2 and 2.1 GHz, LO = 0, 2 & 4 dBm  
XU1009-BD_4samples: OIP3 and IIP3 (dBm) vs. RF LSB (GHz)  
IF1_ONLY = -3dBm per Tone, 2 and 2.1 GHz, LO = 0, 2 & 4 dBm  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
OIP3 (dBm)  
OIP3 (dBm)  
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
LO Power (dBm)=0, RC=R5C10  
LO Power (dBm)=0, RC=R5C13  
LO Power (dBm)=0, RC=R7C11  
LO Power (dBm)=0, RC=R7C13  
LO Power (dBm)=2, RC=R5C10  
LO Power (dBm)=2, RC=R5C13  
LO Power (dBm)=2, RC=R7C11  
LO Power (dBm)=2, RC=R7C13  
LO Power (dBm)=4, RC=R5C10  
LO Power (dBm)=4, RC=R5C13  
LO Power (dBm)=4, RC=R7C11  
LO Power (dBm)=4, RC=R7C13  
LO Power (dBm)=0, RC=R5C10  
LO Power (dBm)=0, RC=R5C13  
LO Power (dBm)=0, RC=R7C11  
LO Power (dBm)=0, RC=R7C13  
LO Power (dBm)=2, RC=R5C10  
LO Power (dBm)=2, RC=R5C13  
LO Power (dBm)=2, RC=R7C11  
LO Power (dBm)=2, RC=R7C13  
LO Power (dBm)=4, RC=R5C10  
LO Power (dBm)=4, RC=R5C13  
LO Power (dBm)=4, RC=R7C11  
LO Power (dBm)=4, RC=R7C13  
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
LO Power (dBm)=0, RC=R5C10  
LO Power (dBm)=0, RC=R5C13  
LO Power (dBm)=0, RC=R7C11  
LO Power (dBm)=0, RC=R7C13  
LO Power (dBm)=2, RC=R5C10  
LO Power (dBm)=2, RC=R5C13  
LO Power (dBm)=2, RC=R7C11  
LO Power (dBm)=2, RC=R7C13  
LO Power (dBm)=4, RC=R5C10  
LO Power (dBm)=4, RC=R5C13  
LO Power (dBm)=4, RC=R7C11  
LO Power (dBm)=4, RC=R7C13  
LO Power (dBm)=0, RC=R5C10  
LO Power (dBm)=0, RC=R5C13  
LO Power (dBm)=0, RC=R7C11  
LO Power (dBm)=0, RC=R7C13  
LO Power (dBm)=2, RC=R5C10  
LO Power (dBm)=2, RC=R5C13  
LO Power (dBm)=2, RC=R7C11  
LO Power (dBm)=2, RC=R7C13  
LO Power (dBm)=4, RC=R5C10  
LO Power (dBm)=4, RC=R5C13  
LO Power (dBm)=4, RC=R7C11  
LO Power (dBm)=4, RC=R7C13  
IIP3 (dBm)  
IIP3 (dBm)  
6
6
4
4
2
2
0
0
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
RF USB (GHz)  
RF LSB (GHz)  
Page 2 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
18.0-36.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1009-BD  
Transmitter Measurements (cont.)  
XU1009-BD_5samples: USB Conversion gain (dB) vs. Vg1 (V)  
IF1_ONLY = 1.84 GHz, -10dBm, LO = 0, 2 & 4 dBm  
15  
10  
5
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
LO Power (dBm)=2, RF freq (GHz)=20, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=20, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=20, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=20, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=20, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=21, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=21, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=21, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=21, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=21, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=22, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=22, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=22, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=22, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=22, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=23, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=23, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=23, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=23, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=23, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=24, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=24, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=24, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=24, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=24, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=25, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=25, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=25, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=25, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=25, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=26, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=26, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=26, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=26, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=26, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=27, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=27, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=27, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=27, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=27, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=28, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=28, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=28, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=28, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=28, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=29, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=29, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=29, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=29, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=29, RC=R7C13  
LO Power (dBm)=2, RF freq (GHz)=30, RC=R5C10  
LO Power (dBm)=2, RF freq (GHz)=30, RC=R5C13  
LO Power (dBm)=2, RF freq (GHz)=30, RC=R6C11  
LO Power (dBm)=2, RF freq (GHz)=30, RC=R7C11  
LO Power (dBm)=2, RF freq (GHz)=30, RC=R7C13  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-1.2  
-1  
-0.8  
-0.6  
-0.4  
-0.2  
0
0.2  
Vg1 (V)  
XU1009-BD_5samples: USB Conv Gain (dB), Id1 & IIP3 (dBm) vs. Vg1 (V)  
IF1_ONLY = -3dBm per Tone, 2 and 2.1 GHz, LO = 2dBm  
XU1009-BD_5samples: LSB Conv Gain (dB) and IIP3 (dBm) vs. Vg1 (V)  
IF1_ONLY = -3dBm per Tone, 2 and 2.1 GHz, LO = 2dBm  
,
,
,
,
,
,
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,
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,
,
RF LSB (GHz)=21, RC=R5C10  
RF LSB (GHz)=21, RC=R5C12  
RF LSB (GHz)=21, RC=R6C11  
RF LSB (GHz)=21, RC=R7C11  
RF LSB (GHz)=21, RC=R7C13  
RF LSB (GHz)=23, RC=R5C10  
RF LSB (GHz)=23, RC=R5C12  
RF LSB (GHz)=23, RC=R6C11  
RF LSB (GHz)=23, RC=R7C11  
RF LSB (GHz)=23, RC=R7C13  
RF LSB (GHz)=25, RC=R5C10  
RF LSB (GHz)=25, RC=R5C12  
RF LSB (GHz)=25, RC=R6C11  
RF LSB (GHz)=25, RC=R7C11  
RF LSB (GHz)=25, RC=R7C13  
RF LSB (GHz)=27, RC=R5C10  
RF LSB (GHz)=27, RC=R5C12  
RF LSB (GHz)=27, RC=R6C11  
RF LSB (GHz)=27, RC=R7C11  
RF LSB (GHz)=27, RC=R7C13  
RF LSB (GHz)=29, RC=R5C10  
RF LSB (GHz)=29, RC=R5C12  
RF LSB (GHz)=29, RC=R6C11  
RF LSB (GHz)=29, RC=R7C13  
RF LSB (GHz)=21, RC=R5C10  
RF LSB (GHz)=21, RC=R5C12  
RF LSB (GHz)=21, RC=R6C11  
RF LSB (GHz)=21, RC=R7C11  
RF LSB (GHz)=21, RC=R7C13  
RF LSB (GHz)=23, RC=R5C10  
RF LSB (GHz)=23, RC=R5C12  
RF LSB (GHz)=23, RC=R6C11  
RF LSB (GHz)=23, RC=R7C11  
RF LSB (GHz)=23, RC=R7C13  
RF LSB (GHz)=25, RC=R5C10  
RF LSB (GHz)=25, RC=R5C12  
RF LSB (GHz)=25, RC=R6C11  
RF LSB (GHz)=25, RC=R7C11  
RF LSB (GHz)=25, RC=R7C13  
RF LSB (GHz)=27, RC=R5C10  
RF LSB (GHz)=27, RC=R5C12  
RF LSB (GHz)=27, RC=R6C11  
RF LSB (GHz)=27, RC=R7C11  
RF LSB (GHz)=27, RC=R7C13  
RF LSB (GHz)=29, RC=R5C10  
RF LSB (GHz)=29, RC=R5C12  
RF LSB (GHz)=29, RC=R6C11  
RF LSB (GHz)=29, RC=R7C13  
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
RF USB (GHz)=21, RC=R5C10  
RF USB (GHz)=21, RC=R5C12  
RF USB (GHz)=21, RC=R6C11  
RF USB (GHz)=21, RC=R7C11  
RF USB (GHz)=21, RC=R7C13  
RF USB (GHz)=23, RC=R5C10  
RF USB (GHz)=23, RC=R5C12  
RF USB (GHz)=23, RC=R6C11  
RF USB (GHz)=23, RC=R7C11  
RF USB (GHz)=23, RC=R7C13  
RF USB (GHz)=25, RC=R5C10  
RF USB (GHz)=25, RC=R5C12  
RF USB (GHz)=25, RC=R6C11  
RF USB (GHz)=25, RC=R7C11  
RF USB (GHz)=25, RC=R7C13  
RF USB (GHz)=27, RC=R5C10  
RF USB (GHz)=27, RC=R5C12  
RF USB (GHz)=27, RC=R6C11  
RF USB (GHz)=27, RC=R7C11  
RF USB (GHz)=27, RC=R7C13  
RF USB (GHz)=29, RC=R5C10  
RF USB (GHz)=29, RC=R5C12  
RF USB (GHz)=29, RC=R6C11  
RF USB (GHz)=29, RC=R7C11  
RF USB (GHz)=29, RC=R7C13  
RF USB (GHz)=21, RC=R5C10  
RF USB (GHz)=21, RC=R5C12  
RF USB (GHz)=21, RC=R6C11  
RF USB (GHz)=21, RC=R7C11  
RF USB (GHz)=21, RC=R7C13  
RF USB (GHz)=23, RC=R5C10  
RF USB (GHz)=23, RC=R5C12  
RF USB (GHz)=23, RC=R6C11  
RF USB (GHz)=23, RC=R7C11  
RF USB (GHz)=23, RC=R7C13  
RF USB (GHz)=25, RC=R5C10  
RF USB (GHz)=25, RC=R6C11  
RF USB (GHz)=25, RC=R7C11  
RF USB (GHz)=25, RC=R7C13  
RF USB (GHz)=27, RC=R5C10  
RF USB (GHz)=27, RC=R5C12  
RF USB (GHz)=27, RC=R6C11  
RF USB (GHz)=27, RC=R7C11  
RF USB (GHz)=27, RC=R7C13  
RF USB (GHz)=29, RC=R5C10  
RF USB (GHz)=29, RC=R5C12  
RF USB (GHz)=29, RC=R6C11  
RF USB (GHz)=29, RC=R7C11  
RF USB (GHz)=29, RC=R7C13  
RF USB (GHz)=21, RC=R5C10  
RF USB (GHz)=21, RC=R5C12  
RF USB (GHz)=21, RC=R6C11  
RF USB (GHz)=21, RC=R7C11  
RF USB (GHz)=21, RC=R7C13  
RF USB (GHz)=23, RC=R5C10  
RF USB (GHz)=23, RC=R5C12  
RF USB (GHz)=23, RC=R6C11  
RF USB (GHz)=23, RC=R7C11  
RF USB (GHz)=23, RC=R7C13  
RF USB (GHz)=25, RC=R5C10  
RF USB (GHz)=25, RC=R5C12  
RF USB (GHz)=25, RC=R6C11  
RF USB (GHz)=25, RC=R7C11  
RF USB (GHz)=25, RC=R7C13  
RF USB (GHz)=27, RC=R5C10  
RF USB (GHz)=27 RC=R5C12  
25  
25  
20  
15  
10  
5
450  
20  
15  
10  
5
400  
350  
300  
250  
200  
150  
100  
50  
0
0
-5  
-5  
-10  
-15  
-20  
-10  
-15  
-20  
0
-1  
-0.9  
-0.8  
-0.7  
-0.6  
-0.5  
-0.4  
-0.3  
-0.2  
-0.1  
0
0.1  
0.2  
-1  
-0.9  
-0.8  
-0.7  
-0.6  
-0.5  
-0.4  
-0.3  
-0.2  
-0.1  
0
0.1  
0.2  
Vg1 (V)  
Vg1 (V)  
XU1009-BD_4samples: USB Conversion Gain (dB) vs. RF (GHz)  
IF = -10 dBm per tone, LO Power = 2 and 4 dBm, Nominal Bias  
XU1009-0BD_4samples: LSB Conversion Gain (dB) vs. RF (GHz)  
IF = -10 dBm per tone, LO Power = 2 and 4 dBm, Nominal Bias  
15  
14  
13  
12  
11  
10  
9
15  
14  
13  
12  
11  
10  
9
,
,
,
,
,
,
,
,
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13  
,
,
,
,
,
,
,
,
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13  
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
RF USB (GHz)  
RF LSB (GHz)  
Page 3 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
18.0-36.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1009-BD  
Transmitter Measurements (cont.)  
XU1009-BD_4samples: USB IIP3 (dBm) vs. RF (GHz)  
IF = -10 dBm per tone, LO Power = 2 and 4 dBm, Nominal Bias  
XU1009-BD_4samples: LSB IIP3 (dBm) vs. RF (GHz)  
IF = -10dBm per tone, LO Power = 2 and 4dBm, Nominal Bias  
17  
16  
15  
14  
13  
12  
11  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
10  
9
,
,
,
,
,
,
,
,
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13  
10  
9
8
7
6
5
4
3
2
1
0
,
,
,
,
,
,
,
,
,
,
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R5C12  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=2, RC=R7C13  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C10  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R5C12  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R6C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C11  
Vg1 (V)=-0.2, LO Power (dBm)=4, RC=R7C13  
8
7
6
5
4
3
2
1
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
0
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
RF USB (GHz)  
RF LSB (GHz)  
Page 4 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
18.0-36.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1009-BD  
Mechanical Drawing  
0.305  
0.904  
1.904 2.104  
2.504  
2.904  
(0.012)  
(0.036)  
(0.075) (0.083) (0.099)  
(0.114)  
2.000  
2
(0.079)  
4
5
6
7
3
0.996  
(0.039)  
8
0.295  
1
XU1009-BD  
(0.012)  
12  
11  
10  
9
0.0  
0.504  
0.904  
2.305  
2.704  
(0.106)  
3.200  
0.0  
(0.020)  
(0.036)  
(0.091)  
(0.126)  
(Note: Engineering designator is 26TX0555)  
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.  
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold  
All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008).  
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.  
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.968 mg.  
Bond Pad #1 (RF Out) Bond Pad #3 (IF1)  
Bond Pad #2 (Vd1) Bond Pad #4 (Vg4)  
Bond Pad #5 (Vg3)  
Bond Pad #6 (Vg2)  
Bond Pad #7 (Vss)  
Bond Pad #8 (LO)  
Bond Pad #9 (Vd3)  
Bond Pad #10 (Vd2) Bond Pad #12 (Vg1)  
Bond Pad #11 (IF2)  
Vg3  
Bias Arrangement  
Vd1 Vg4  
Vg2  
Bypass Capacitors - See App Note [2]  
Vss  
IF1  
2
4
5
6
7
3
LO  
8
RF  
1
XU1009-BD  
12  
11  
10  
9
IF2  
Vd2  
Vg1  
Vd3  
Page 5 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
18.0-36.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1009-BD  
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd(1,2,3)=5.0V,  
Vss=-5.0V, Id1=230mA, Id2=140mA, Id3=75mA and Iss=50mA. Additionally, a mixer and doubler bias are also required  
with Vg3=Vg4=-0.5V. Adjusting Vg3 and Vg4 above or below this value can adversely affect conversion gain, LO/RF  
isolation and intercept point performance. Gain control can be adjusted by varying Vg1 from 0.0 to -1.2 V with 0.0 V  
providing minimum attenuation and -1.2 V providing maximum attenuation. It is also recommended to use active  
biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results.  
Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single  
transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the  
current.The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage.The typical gate  
voltage needed to do this is -0.2V.Typically the gate is protected with Silicon diodes to limit the applied voltage. Also,  
make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain  
supply.  
App Note [2] Bias Arrangement -  
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or  
gate pad DC bypass capacitors ( 100-200 pF) can be combined. Additional DC bypass capacitance ( 0.01 uF) is also  
recommended to all DC or combination (if gate or drains are tied together) of DC bias pads.  
For Individual Stage Bias -- Each DC pad (Vd1,2,3,Vss, and Vg1,2,3,4) needs to have DC bypass capacitance ( 100-200 pF)  
as close to the device as possible. Additional DC bypass capacitance ( 0.01 uF) is also recommended.  
MTTFTables (TBD)  
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.  
Backplate  
Channel  
Rth  
MTTF Hours  
FITs  
Temperature  
Temperature  
55 deg Celsius  
75 deg Celsius  
95 deg Celsius  
deg Celsius  
deg Celsius  
deg Celsius  
C/W  
C/W  
C/W  
E+  
E+  
E+  
E+  
E+  
E+  
Bias Conditions: Vd1=Vd2=Vd3=5.0V,Vss=-5.0V, Id1=230mA, Id2=140mA, Id3=75mA, Iss=50mA  
Page 6 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
18.0-36.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1009-BD  
App Note [3] USB/LSB Selection -  
LSB  
USB  
For Upper Side Band operation (USB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (180º)  
respectively as shown in the diagram,  
the USB signal will reside on the  
isolated port. The input port must be  
loaded with 50 ohms.  
For Lower Side Band operation (LSB):  
With IF1 and IF2 connected to the  
direct port (0º) and coupled port (180º)  
respectively as shown in the diagram,  
the LSB signal will reside on the input  
port. The isolated port must be loaded  
with 50 ohms.  
IF2  
IF1  
An alternate method of Selection of USB or LSB:  
LSB  
In Phase Combiner  
-180º  
USB  
In Phase Combiner  
-180º  
IF2  
IF1  
IF2  
IF1  
Page 7 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
18.0-36.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1009-BD  
Device Schematic  
Block Diagram  
Vd1  
IF1  
Vd2  
LO Buffer  
Vg2  
Vd3  
Vss  
Doubler  
Output Amp  
Mixer  
RF Out  
RF Out  
RF In  
RF  
LO  
LO Out  
LO In  
LO Out LO In  
LO  
Vg1  
IF2 Vg4  
Vg3  
Page 8 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
18.0-36.0 GHz GaAs MMIC  
Transmitter  
March 2007 - Rev 01-Mar-07  
U1009-BD  
Handling and Assembly Information  
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the  
human body and the environment. For safety, observe the following procedures:  
Do not ingest.  
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical  
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.  
Observe government laws and company regulations when discarding this product.This product must be  
discarded in accordance with methods specified by applicable hazardous waste procedures.  
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support  
devices or systems without the express written approval of the President and General Counsel of Mimix  
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for  
surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be reasonably expected to result in a  
significant injury to the user. (2) A critical component is any component of a life support device or system whose  
failure to perform can be reasonably expected to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied  
in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-  
static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,  
sharp tweezers.  
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the  
backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible.The  
mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die  
Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy  
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die  
periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If  
eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the  
die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action  
to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended.The gold-tin eutectic  
(80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided).The work  
station temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum.  
The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force  
impact are critical during placement.  
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to  
the die's gold bond pads.The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x  
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm  
(0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be  
avoided.Thermo-compression bonding is recommended though thermosonic bonding may be used providing  
the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.  
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short  
as possible.  
Ordering Information  
Part Number  
Description  
XU1009-BD-000V  
Where“V”is RoHS compliant die packed in vacuum release gel paks  
XU1009-BD-EV1  
XU1009 die evaluation module  
Page 9 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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 		XU1001 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1001-BD 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1001-BD-000V 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1001-BD-000W 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1001-BD-EV1 33.0-40.0 GHz的砷化镓MMIC变送器[ 33.0-40.0 GHz GaAs MMIC Transmitter ] 8 页

MIMIX

 		XU1002 18.0-25.0 GHz的砷化镓MMIC变送器[ 18.0-25.0 GHz GaAs MMIC Transmitter ] 8 页

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