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IZ74HCU04

型号:

IZ74HCU04

描述:

六角无缓冲变频器高性能硅栅CMOS[ Hex Unbuffered Inverter High-Performance Silicon-Gate CMOS ]

品牌:

INTEGRAL[ INTEGRAL CORP. ]

页数:

6 页

PDF大小:

60 K

TECHNICAL DATA  
IN74HCU04  
Hex Unbuffered Inverter  
High-Performance Silicon-Gate CMOS  
The IN74HCU04A is identical in pinout to the LS/ALS04. The  
device inputs are compatible with standard CMOS outputs; with pullup  
resistors, they are compatible with LS/ALSTTL outputs.  
This device consists of six single-stage inverters. These inverters  
are well suited for use as oscillators, pulse shapers, and in many other  
applications requiring a high-input impedance amplifier. For digital  
applications, the HC04 is recommended.  
ORDERING INFORMATION  
·
·
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V; 2.5 to 6 V in Oscillator  
Configurations.  
IN74HCU04N  
IN74HCU04D  
IZ74HCU04 Chip  
Plastic  
SOIC  
·
·
Low Input Current: 1.0 mA  
High Noise Immunity Characteristic of CMOS Devices  
TA = -55° to 125° C for all packages  
PIN ASSIGNMENT  
LOGIC DIAGRAM  
A1  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V
CC  
Y1  
A6  
Y6  
A5  
Y5  
A4  
Y4  
A2  
Y2  
A3  
Y3  
GND  
8
FUNCTION TABLE  
Inputs  
Output  
A
L
Y
H
L
H
PIN 14 =VCC  
PIN 7 = GND  
1
IN74HCU04  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
-0.5 to +7.0  
-1.5 to VCC +1.5  
-0.5 to VCC +0.5  
±20  
Unit  
V
VCC  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
V
IN  
V
VOUT  
IIN  
V
mA  
mA  
mA  
mW  
IOUT  
ICC  
DC Output Current, per Pin  
±25  
DC Supply Current, VCC and GND Pins  
±50  
PD  
Power Dissipation in Still Air, Plastic DIP **  
SOIC Package **  
750  
500  
Tstg  
TL  
Storage Temperature  
-65 to +150  
260  
°C  
°C  
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP or SOIC Package)  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
** Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C  
SOIC Package: : - 7 mW/°C from 65° to 125°C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
VCC  
Parameter  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
Input Rise and Fall Time (Figure 1)  
Min  
2.0  
0
Max  
6.0  
Unit  
V
V , VOUT  
IN  
VCC  
V
TA  
-55  
-
+125  
°C  
ns  
1000  
500  
400  
tr, tf  
VCC =2.0 Â  
VCC =4.5 Â  
VCC =6.0 Â  
This device contains protection circuitry to guard against damage due to high static voltages or electric  
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated  
voltages to this high-impedance circuit. For proper operation, V and VOUT should be constrained to the range  
IN  
GND£(V or VOUT)£VCC.  
IN  
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
2
IN74HCU04  
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)  
VCC  
V
Guaranteed Limit  
Symbol  
Parameter  
Test Conditions  
VOUT=0.1 V *  
25 °C to  
-55°C  
£85  
°C  
£125  
°C  
Unit  
V
V
IH  
Minimum High-  
Level Input Voltage êIOUTê£ 20 mA  
2.0  
4.5  
6.0  
1.7  
3.6  
4.8  
1.7  
3.6  
4.8  
1.7  
3.6  
4.8  
V
Maximum Low -  
Level Input Voltage êIOUTê £ 20 mA  
VOUT= VCC-0.1 V *  
2.0  
4.5  
6.0  
0.3  
0.8  
1.1  
0.3  
0.8  
1.1  
0.3  
0.8  
1.1  
V
V
IL  
VOH  
Minimum High-  
Level Output  
Voltage  
V =V  
2.0  
4.5  
6.0  
1.8  
4.0  
5.5  
1.8  
4.0  
5.5  
1.8  
4.0  
5.5  
IN  
IL  
êIOUTê £ 20 mA  
V =V  
IN  
IL  
êIOUTê £ 4.0 mA  
êIOUTê £ 5.2 mA  
4.5  
6.0  
3.98  
5.48  
3.84  
5.34  
3.7  
5.2  
VOL  
Maximum Low-  
Level Output  
Voltage  
V =V  
êIOUTê £ 20 mA  
2.0  
4.5  
6.0  
0.2  
0.5  
0.5  
0.2  
0.5  
0.5  
0.2  
0.5  
0.5  
V
IN  
IH  
V =V  
IN  
IH  
êIOUTê £ 4.0 mA  
êIOUTê £ 5.2 mA  
4.5  
6.0  
0.26  
0.26  
0.33  
0.33  
0.4  
0.4  
IIN  
Maximum Input  
Leakage Current  
V =VCC or GND  
6.0  
±0.1  
±1.0  
±1.0  
mA  
mA  
IN  
ICC  
Maximum Quiescent V =VCC or GND  
6.0  
2.0  
20  
40  
IN  
Supply Current  
(per Package)  
IOUT=0mA  
* For VCC = 2.0 V, VOUT = 0.2 V or VCC – 0.2 V.  
3
IN74HCU04  
AC ELECTRICAL CHARACTERISTICS (CL=50pF, Input tr=tf=6.0 ns)  
VCC  
Guaranteed Limit  
Symbol  
Parameter  
V
25 °C to £85°C  
-55°C  
£125°C  
Unit  
ns  
tPLH, tPHL Maximum Propagation Delay, Input A to  
Output Y (Figures 1 and 2)  
2.0  
4.5  
6.0  
75  
15  
13  
95  
19  
16  
110  
22  
19  
tTLH, tTHL Maximum Output Transition Time, Any Output  
(Figures 1 and 2)  
2.0  
4.5  
6.0  
70  
15  
13  
85  
18  
16  
100  
22  
19  
ns  
CIN  
Maximum Input Capacitance  
-
10  
10  
10  
pF  
pF  
CPD  
Power Dissipation Capacitance (Per Inverter)  
TA=25?Ñ, VCC=5.0 V  
15  
Used to determine the no-load dynamic power  
consumption:  
PD=CPDVCC2f+ICCVCC  
For load considerations, see Chepter 4.  
TEST POINT  
OUTPUT  
t
t
f
r
V
CC  
90%  
50%  
INPUT A  
DEVICE  
UNDER  
TEST  
10%  
GND  
t
PLH  
C *  
t
PHL  
L
90%  
50%  
10%  
OUTPUT Y  
t
t
TLH  
THL  
* Includes all probe and jig capacitance  
Figure 1. Switching Waveforms.  
Figure 2. Test Circuit  
LOGIC DETAIL  
(1/6 of Device Show)  
VCC  
A
Y
4
IN74HCU04  
TYPICAL APPLICATIONS  
Crystal Oscillator  
Stable RC Oscillator  
R
2
1/6HCU04 1/6HCU04 1/6HCU04  
V
out  
R > >R  
2
1
1
2
C <C  
C
1/6HCU04  
R
1
R
R
1
2
C
C
2
1
V
out  
Schmitt Trigger  
High Input Single-Stage Amplifier  
with a 2 to 6 V Supply Range  
R
2
V
CC  
1 M  
R > 6R  
2
1
1/6HCU04  
1/6HCU04 1/6HCU04  
R
1
INPUT  
OUTPUT  
V
in  
V
out  
1 M  
Multi-Stage Amplifier  
LED Driver  
V
+V  
CC  
1/6HCU04 1/6HCU04 1/6HCU04  
1/6HCU04  
INPUT  
OUTPUT  
For reduced power suplly current, use high-efficiency LEDs  
such as the Hewlett-Packard HLMP series or equivalent  
5
IN74HCU04  
CHIP PAD DIAGRAM IZ74HCU04  
1.17 + 0.003  
(0,0)  
Chip marking  
25HCU04A  
(x=0.992, y=0.092)  
Thickness of chip 0.46 ± 0,02 mm  
PAD LOCATION  
Pad No  
01  
Symbol  
X
Y
Pad size* , mm  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
0.105x0.105  
A1  
Y1  
A2  
Y2  
A3  
Y3  
0.110  
0.170  
0.350  
0.610  
0.850  
0.950  
0.950  
0.950  
0.850  
0.610  
0.350  
0.170  
0.110  
0.110  
0.280  
0.110  
0.110  
0.110  
0.110  
0.320  
0.510  
0.760  
0.970  
0.970  
0.970  
0.970  
0.800  
0.550  
02  
03  
04  
05  
06  
07  
08  
09  
10  
11  
12  
13  
14  
GND  
Y4  
A4  
Y5  
A5  
Y6  
A6  
VCC  
* Pad size is given as per metallization layer  
6
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