L
3VD156600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD156600YL is a High voltage N-Channel enhancement
mode power MOS-FET chip fabricated in advanced silicon
epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability.
¾ Avalanche Energy Specified.
¾ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
¾ The chips may packaged in TO-92DT-3L type and the
typical equivalent product is 1N60SS.
CHIP TOPOGRAPHY
¾ The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
¾ Die size: 1.6mm*1.54mm.
¾ Chip Thickness: 300±20μm.
¾ Top metal: Al, Backside Metal : Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Uni
Parameter
Symbol
Ratings
t
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
VDS
VGS
ID
600
±30
V
500
mA
°C
°C
Operation Junction Temperature
Storage Temperature
TJ
150
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
V(BR)DSS
Vth(GS)
lGSS
Test conditions
VGS = 0V, ID=250μA
ID=250μA ,VDS=VGS
VGS=±30V, VDS=0V
VDS=600V, VGS=0V
ID=0.5A, VGS=10V
Min.
600
2.0
---
Typ. Max. Unit
---
---
---
---
---
----
4.0
V
V
±100
1.0
nA
µA
Ω
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward On
Voltage
IDSS
---
RDS(on)
---
13.5
VFSD
ID=0.8A,VGS=0V
---
---
1.0
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.10.15
Page 1 of 1
