L
3VD186700YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
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3VD186700YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced
voltage-blocking capability.
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¾
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Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
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The chips may packaged in TO-251-3L type and the
typical equivalent product is 1N70.
CHIP TOPOGRAPHY
The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
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Die size: 1.96mm*1.78mm.
Chip Thickness: 300±20μm.
Top metal: Al, Backside Metal: Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
ID
Ratings
Unit
700
±30
V
V
Gate-Source Voltage
Drain Current
1.0
A
Operation Junction Temperature
Storage Temperature
TJ
150
°C
°C
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Symbol
V(BR)DSS
Vth(GS)
lGSS
Test conditions
VGS = 0V, ID=250μA
ID=250μA ,VDS=VGS
VGS=±30V, VDS=0V
VDS=700V, VGS=0V
ID=0.4A, VGS=10V
Min.
Typ.
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Max.
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Unit
V
700
2.0
---
---
4.0
V
---
±100
1.0
nA
µA
Ω
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward On
Voltage
IDSS
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---
RDS(on)
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14.5
VFSD
ID=1.0A,VGS=0V
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1.4
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.10.15
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