L
3VD235600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾
3VD235600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced
voltage-blocking capability.
¾
¾
¾
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
¾
¾
The chips may packaged in TO-251 type and the typical
equivalent product is 2N60.
CHIP TOPOGRAPHY
The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
¾
¾
¾
Die size: 2.72mm*2.06mm.
Chip Thickness: 300±20μm.
Top metal: Al, Backside Metal: Ag.
ABSOLUTE MAXIMUM RATINGS(Tamb=25°C)
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
ID
Ratings
Unit
600
±30
V
V
Gate-Source Voltage
Drain Current
2.0
A
Power Dissipation (TO-251 Package)
Operation Junction Temperature
Storage Temperature
PD
44
W
°C
°C
-55～+150
-55～+150
TJ
Tstg
ELECTRICAL CHARACTERISTICS(Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Symbol
BVDSS
VTH
Test conditions
Min.
600
2.0
-
Typ.
Max.
-
Unit
V
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=600V, VGS=0V
-
-
-
4.0
1.0
V
IDSS
µA
RDS(on) VGS=10V, ID=1.0A
-
-
-
-
-
-
4.6
±100
1.4
Ω
nA
V
Gate-Source Leakage Current
Source-Drain Diode Forward On
Voltage
IGSS
VGS=±30V, VDS=0V
IS=2.0A, VGS=0V
VFSD
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.10.15
Page 1 of 1
