3VD250600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD250600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability.
3
1
1
¾ Avalanche Energy Specified
¾ Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
PAD1-Gate PAD3-Source
¾ The chips may packaged in TO-251 type and the
typical equivalent product is 2N60.
CHIP TOPOGRAPHY
¾ The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers.
¾ Die size: 2.59mm*2.42mm.
¾ Chip Thickness: 300±20μm.
¾ Top metal : Al, Backside Metal : Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Symbo
Parameter
l
Ratings
Unit
Drain-Source Voltage
VDS
VGS
ID
600
±30
V
V
Gate-Source Voltage
Drain Current
2.0
A
Power Dissipation (TO-251 Package)
Operation Junction Temperature
Storage Temperature
PD
44
W
°C
°C
-55～+150
-55～+150
TJ
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Symbo
Parameter
l
Test conditions
Min.
Typ. Max. Unit
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
BVDSS
VTH
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=600V, VGS=0V
600
2.0
-
-
-
-
-
V
V
4.0
1.0
IDSS
µA
RDS(on) VGS=10V, ID=1.0A
-
-
-
4.1
4.6
±100
1.4
Ω
nA
V
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
IGSS
VGS=±30V, VDS=0V
IS=2.0A, VGS=0V
-
-
VFSD
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2008.07.28
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