L
3VD324500YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾
3VD324500YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology;
Advanced termination scheme to provide enhanced
voltage-blocking capability;
3
1
¾
¾
¾
Avalanche Energy Specified;
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode;
3-Source PAD
1-Gate PAD
¾
¾
The chips may packaged in TO-220 type;
The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers;
CHIP TOPOGRAPHY
¾
¾
¾
Die size: 3.78mm*2.78mm;
Chip Thickness: 300±20μm;
Top metal: Al, Backside Metal: Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
ID
Ratings
500
Unit
V
V
Gate-Source Voltage
±20
Drain Current
5.5
A
Power Dissipation (TO-220 Package)
Operation Junction Temperature
Storage Temperature
PD
74
W
°C
°C
TJ
150
-55～+150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Symbol
BVDSS
VTH
Test conditions
Min.
500
2
Typ.
Max.
Unit
V
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=500V, VGS=0V
-
-
-
-
4
1
V
IDSS
-
µA
RDS(on) VGS=10V, ID=2.7A
-
-
-
-
-
-
1.5
±100
1.6
Ω
nA
V
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
IGSS
VGS=±20V, VDS=0V
IS=5.5A, VGS=0V
VFSD
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2008.10.15
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