3VD393600YL
3VD393600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø
3VD393600YL is a High voltage N•Channel
enhancement mode power MOS•FET chip fabricated
in advanced silicon epitaxial planar technology.
Advanced termination scheme to provide enhanced
voltage•blocking capability.
Ø
Ø
Ø
Avalanche Energy Specified
Source•to•Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Ø
Ø
The chips may packaged in TO•220 type and the
typical equivalent product is 06N60.
The packaged product is widely used in AC•DC
power suppliers, DC•DC converters and H•bridge
PWM motor drivers.
Ø
Ø
Ø
Die size: 4.03mm*3.76mm.
Chip Thickness: 300±m2m0.
CHIP TOPOGRAPHY
Top metal : Al, Backside Metal : Ag.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain•Source Voltage
Symbol
VDS
VGS
ID
Ratings
600
Unit
V
Gate•Source Voltage
±30
V
Drain Current
7
A
Power Dissipation (TO•220 Package)
Operation Junction Temperature
Storage Temperature
PD
110
W
°C
°C
TJ
150
•55̚+150
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Symbol
BVDSS
VTH
Test conditions
Min
600
2
Typ
Max
Unit
Drain •Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=600V, VGS=0V
V
V
4
1
Drain•Source Leakage Current
Static Drain• Source On State
Resistance
IDSS
µA
RDS(on)
VGS=10V, ID=3.5A
1.2
W
Gate•Source Leakage Current
Source•Drain Forward on Voltage
IGSS
VGS=±30V, VDS=0V
IS=7A, VGS=0V
±100
1.3
nA
V
VFSD
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0
2007.07.02
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