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NVMD6P02

型号：

NVMD6P02

描述：

功率MOSFET 6 A， 20 V ， PA ????频道SOICâ ???? 8 ，双[ Power MOSFET 6 A, 20 V, PâChannel SOICâ8, Dual ]

品牌：

ONSEMI[ ONSEMI ]

页数：

6 页

PDF大小：

124 K

下载PDF手册

NTMD6P02, NVMD6P02

Power MOSFET

6 A, 20 V, P−Channel SOIC−8, Dual

Features

• Ultra Low R

DS(on)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature Dual SOIC−8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

http://onsemi.com

6 AMPERES, 20 VOLTS

• These Devices are Pb−Free and are RoHS Compliant

• NVMD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

P−Channel

Applications

• Power Management in Portable and Battery−Powered Products,

i.e.: Cellular and Cordless Telephones, and PCMCIA Cards

MAXIMUM RATINGS

Rating

Drain−to−Source Voltage

Symbol Value

Unit

DSS

−20

MARKING DIAGRAM &

PIN ASSIGNMENT

Gate−to−Source Voltage − Continuous

"12

Thermal Resistance −

Junction−to−Ambient (Note 1)

62.5

2.0

−7.8

−5.7

0.5

−3.89

−40

°C/W

D1 D1 D2 D2

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ T = 25°C

Continuous Drain Current @ T = 70°C

E6P02x

SOIC−8

AYWW G

CASE 751

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 4)

STYLE 11

Thermal Resistance −

S1 G1 S2 G2

Junction−to−Ambient (Note 2)

1.28

−6.2

−4.6

0.3

−3.01

−35

°C/W

Total Power Dissipation @ T = 25°C

E6P02 = Specific Device Code

Continuous Drain Current @ T = 25°C

= Blank or S

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Continuous Drain Current @ T = 70°C

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 4)

Thermal Resistance −

Junction−to−Ambient (Note 3)

166

0.75

−4.8

−3.5

0.2

−2.48

−30

°C/W

(Note: Microdot may be in either location)

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ T = 25°C

Continuous Drain Current @ T = 70°C

ORDERING INFORMATION

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 4)

†

Device

Package

Shipping

NTMD6P02R2G

NTMD6P02R2SG

NVMD6P02R2G

SOIC−8

(Pb−Free)

2500 / Tape & Reel

Operating and Storage Temperature Range

T , T

−55 to

+150

°C

stg

SOIC−8

(Pb−Free)

Single Pulse Drain−to−Source Avalanche

500

Energy − Starting T = 25°C (V = −20 Vdc,

= −5.0 Vdc, Peak I = −5.0 Apk,

SOIC−8

L = 40 mH, R = 25 W)

(Pb−Free)

Maximum Lead Temperature for Soldering

Purposes for 10 seconds

260

°C

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds.

2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state.

3. Minimum FR−4 or G−10 PCB, t = steady state.

4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

Publication Order Number:

December, 2012 − Rev. 4

NTMD6P02R2/D

NTMD6P02, NVMD6P02

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)*

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(V = 0 Vdc, I = −250 mAdc)

Vdc

mV/°C

mAdc

(BR)DSS

−20

−

−11.6

Temperature Coefficient (Positive)

Zero Gate Voltage Drain Current

DSS

(V = −20 Vdc, V = 0 Vdc, T = 25°C)

−

−1.0

−5.0

(V = −20 Vdc, V = 0 Vdc, T = 70°C)

Gate−Body Leakage Current

(V = −12 Vdc, V = 0 Vdc)

nAdc

GSS

−

−100

Gate−Body Leakage Current

(V = +12 Vdc, V = 0 Vdc)

GSS

100

ON CHARACTERISTICS

Gate Threshold Voltage

Vdc

mV/°C

GS(th)

(V = V , I = −250 mAdc)

−0.6

−0.88

−1.20

−

2.6

−

Temperature Coefficient (Negative)

Static Drain−to−Source On−State Resistance

DS(on)

(V = −4.5 Vdc, I = −6.2 Adc)

−

0.027

0.038

0.033

0.050

−

(V = −2.5 Vdc, I = −5.0 Adc)

(V = −2.5 Vdc, I = −3.1 Adc)

Forward Transconductance (V = −10 Vdc, I = −6.2 Adc)

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

−

1380

515

1700

775

iss

(V = −16 Vdc, V = 0 Vdc,

Output Capacitance

oss

f = 1.0 MHz)

Reverse Transfer Capacitance

250

450

rss

SWITCHING CHARACTERISTICS (Notes 5 and 6)

Turn−On Delay Time

−

4.0

8.0

125

110

−

d(on)

(V = −10 Vdc, I = −1.0 Adc,

Rise Time

= −10 Vdc,

Turn−Off Delay Time

Fall Time

= 6.0 W)

d(off)

Turn−On Delay Time

Rise Time

d(on)

(V = −16 Vdc, I = −6.2 Adc,

−

= −4.5 Vdc,

Turn−Off Delay Time

Fall Time

−

= 6.0 W)

d(off)

−

Total Gate Charge

Gate−Source Charge

Gate−Drain Charge

−

tot

(V = −16 Vdc,

= −4.5 Vdc,

= −6.2 Adc)

−

BODY−DRAIN DIODE RATINGS (Note 5)

Diode Forward On−Voltage

(I = −1.7 Adc, V = 0 Vdc)

−

−0.80

−0.65

−1.2

Vdc

(I = −1.7 Adc, V = 0 Vdc, T = 125°C)

−

Diode Forward On−Voltage

(I = −6.2 Adc, V = 0 Vdc)

−

−0.95

−0.80

−

(I = −6.2 Adc, V = 0 Vdc, T = 125°C)

Reverse Recovery Time

−

(I = −1.7 Adc, V = 0 Vdc,

dI /dt = 100 A/ms)

−

Reverse Recovery Stored Charge

0.04

−

5. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.

6. Switching characteristics are independent of operating junction temperature.

*Handling precautions to protect against electrostatic discharge are mandatory.

http://onsemi.com

NTMD6P02, NVMD6P02

−2.1 V

−4.5 V

−3.8 V

−10 V

≥ −10 V

8.0

6.0

4.0

T = 25°C

8.0

6.0

4.0

−3.1 V

−2.5 V

−1.8 V

25°C

100°C

T = −55°C

2.0

−1.5 V

= −1.3 V

0.25

0.50

0.75

1.00

1.25

1.50

1.75

1.0

1.5

2.0

2.5

−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−V , GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0.05

0.04

0.03

0.02

0.05

0.04

0.03

= −6.2 A

T = 25°C

= −2.5 V

−2.7 V

−4.5 V

0.02

0.01

2.0

4.0

6.0

8.0

2.0

4.0

6.0

8.0

−V , GATE−TO−SOURCE VOLTAGE (VOLTS)

−I , DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus

Gate−To−Source Voltage

Figure 4. On-Resistance versus Drain Current

and Gate Voltage

1.6

1.4

1.2

1000

100

= 0 V

T = 125°C

= −6.2 A

= −4.5 V

100°C

25°C

0.1

0.8

0.6

0.01

−50 −25

100

125

150

T , JUNCTION TEMPERATURE (°C)

−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance Variation with

Figure 6. Drain−To−Source Leakage Current

Temperature

versus Voltage

http://onsemi.com

NTMD6P02, NVMD6P02

5000

4500

4000

3500

3000

2500

2000

1500

1000

= 0 V

T = 25°C

iss

rss

= −6.2 A

iss

= −16 V

= −4.5 V

T = 25°C

oss

rss

500

5.0

−V

Q , TOTAL GATE CHARGE (nC)

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 8. Gate−To−Source

Figure 7. Capacitance Variation

and Drain−To−Source Voltage versus Total Charge

1000

= −16 V

= −1.0 A

I = −6.2 A

d(off)

= −10 V

= −4.5 V

100

d(off)

d(on)

R , GATE RESISTANCE (OHMS)

100

R , GATE RESISTANCE (OHMS)

100

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Resistive Switching Time Variation

versus Gate Resistance

DRAIN−TO−SOURCE DIODE CHARACTERISTICS

100

= 2.5 V

SINGLE PULSE

= 0 V

1.0 ms

10 ms

= 25°C

T = 25°C

LIMIT

DS(on)

THERMAL LIMIT

PACKAGE LIMIT

0.1

100

0.2

0.4

0.6

0.8

1.0

1.2

−V , SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−V , DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 11. Diode Forward Voltage versus Current

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

http://onsemi.com

NTMD6P02, NVMD6P02

di/dt

TIME

0.25 I

Figure 13. Diode Reverse Recovery Waveform

TYPICAL ELECTRICAL CHARACTERISTICS

D = 0.5

0.2

0.1

0.05

0.1

Normalized to qja at 10s.

0.02

0.01

Chip

0.0175 W

0.0710 W

0.2706 W

0.5776 W

0.7086 W

0.01

0.0154 F

0.0854 F

0.3074 F

1.7891 F

107.55 F

Ambient

1.0E+03

SINGLE PULSE

0.001

1.0E−05 1.0E−04

1.0E−03

1.0E−02

1.0E−01

t, TIME (s)

1.0E+00

1.0E+01

1.0E+02

Figure 14. Thermal Response

http://onsemi.com

NTMD6P02, NVMD6P02

PACKAGE DIMENSIONS

SOIC−8 NB

CASE 751−07

ISSUE AK

NOTES:

−X−

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE

MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL

IN EXCESS OF THE D DIMENSION AT

MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW

STANDARD IS 751−07.

0.25 (0.010)

−Y−

MILLIMETERS

DIM MIN MAX

INCHES

MIN

MAX

0.197

0.157

0.069

0.020

N X 45

4.80

3.80

1.35

0.33

5.00 0.189

4.00 0.150

1.75 0.053

0.51 0.013

SEATING

PLANE

−Z−

1.27 BSC

0.050 BSC

0.10 (0.004)

0.10

0.19

0.40

0.25 0.004

0.25 0.007

1.27 0.016

0.010

0.050

0.020

0.244

0.25

5.80

0.50 0.010

6.20 0.228

0.25 (0.010)

STYLE 11:

PIN 1. SOURCE 1

SOLDERING FOOTPRINT*

2. GATE 1

3. SOURCE 2

4. GATE 2

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

1.52

0.060

7.0

4.0

0.275

0.155

0.6

0.024

1.270

0.050

inches

SCALE 6:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

NTMD6P02R2/D

http://onsemi.com

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