找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

5SGA06D4502

型号:

5SGA06D4502

描述:

不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ]

品牌:

ABB[ THE ABB GROUP ]

页数:

5 页

PDF大小:

391 K

VDRM  
ITGQM  
ITSM  
VT0  
=
=
=
=
=
=
4500 V  
600 A  
Asymmetric Gate turn-off  
Thyristor  
3×103 A  
1.9 V  
5SGA 06D4502  
rT  
3.5  
m  
PRELIMINARY  
VDclink  
2800 V  
Doc. No. 5SYA1236-00 Jun. 04  
Patented free-floating silicon technology  
Low on-state and switching losses  
Central gate electrode  
Industry standard housing  
Cosmic radiation withstand rating  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Repetitive peak off-state  
voltage  
VDRM  
4500  
V
VGR 2 V  
Repetitive peak reverse  
voltage  
VRRM  
17  
V
V
Permanent DC voltage for VDclink  
100 FIT failure rate  
Ambient cosmic radiation at sea level  
in open air.  
2800  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Repetitive peak off-state  
current  
IDRM  
20  
mA  
VD = VDRM, VGR 2 V  
Repetitive peak reverse  
current  
IRRM  
50  
mA  
VR = VRRM, RGK = ∞ Ω  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Mounting force  
Characteristic values  
Parameter  
Fm  
10  
11  
12  
kN  
Symbol Conditions  
min  
typ  
34  
max  
Unit  
mm  
mm  
kg  
Pole-piece diameter  
Housing thickness  
Weight  
Dp  
H
± 0.1 mm  
26  
m
0.25  
Surface creepage distance Ds  
Air strike distance Da  
Anode to Gate  
Anode to Gate  
30  
mm  
mm  
20.5  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SGA 06D4502  
GTO Data  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
IT(AV)M Half sine wave, TC = 85 °C  
min  
typ  
max  
Unit  
Max. average on-state  
current  
210  
A
Max. RMS on-state current IT(RMS)  
330  
3.1×103  
A
A
Max. peak non-repetitive  
surge current  
ITSM  
tp = 8.3 ms, Tvj = 125°C, sine wave  
After Surge: VD = VR = 0 V  
Limiting load integral  
I2t  
40×103  
3×103  
A2s  
A
Max. peak non-repetitive  
surge current  
ITSM  
tp = 10 ms, Tvj = 125°C, sine wave  
After Surge: VD = VR = 0 V  
Limiting load integral  
I2t  
45×103  
6×103  
A2s  
A
Max. peak non-repetitive  
surge current  
ITSM  
tp = 1 ms, Tvj = 125°C, sine wave  
After Surge: VD = VR = 0 V  
Limiting load integral  
Characteristic values  
Parameter  
I2t  
18×103  
A2s  
Symbol Conditions  
min  
typ  
max  
4
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
V(T0)  
rT  
IT = 600 A, Tvj = 125°C  
Tvj = 125°C  
IT = 200...600 A  
1.9  
3.5  
V
mΩ  
IH  
Tvj = 25°C  
20  
A
Turn-on switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Critical rate of rise of on-  
state current  
diT/dtcr  
400  
A/µs  
Tvj = 125°C,  
IT = 600 A, IGM = 20 A,  
f = 200 Hz  
f = 1 Hz  
Critical rate of rise of on-  
state current  
diT/dtcr  
ton  
600  
A/µs  
µs  
diG/dt = 20 A/µs  
Min. on-time  
80  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
1.5  
3
Unit  
µs  
µs  
J
Turn-on delay time  
Rise time  
td  
VD = 0.5 VDRM, Tvj = 125 °C  
IT = 600 A, di/dt = 200 A/µs,  
IGM = 20 A, diG/dt = 20 A/µs,  
tr  
Turn-on energy per pulse  
Eon  
0.8  
CS = 1 µF, RS = 10 Ω  
Turn-off switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
Max. controllable turn-off  
current  
ITGQM  
600  
A
VDM VDRM, VD = 0.5 VDRM  
diGQ/dt = 20 A/µs, CS = 1 µF,  
VDSP LS 0.15 µH, RCD Snubber  
Spike Voltage  
V
650  
Min. off-time  
toff  
80  
µs  
Characteristic values  
Parameter  
Symbol Conditions  
min  
max  
15  
Unit  
µs  
µs  
J
Storage time  
tS  
tf  
VD = 0.5 VDRM, Tvj = 125 °C  
VDM VDRM, diGQ/dt = 20 A/µs,  
Fall time  
5
ITGQ = ITGQM  
,
Turn-on energy per pulse  
Peak turn-off gate current  
Eoff  
IGQM  
1.9  
300  
RS = 10 , CS = 1 µF, LS = 0.15 µH  
A
RCD Snubber  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1236-00 Jun. 04  
page 2 of 5  
5SGA 06D4502  
Gate  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
max  
Unit  
Repetitive peak reverse  
voltage  
VGRM  
17  
V
Repetitive peak reverse  
current  
IGRM  
20  
mA  
VGR = VGRM  
Characteristic values  
Parameter  
Symbol Conditions  
typ  
1
max  
Unit  
V
Gate trigger voltage  
Gate trigger current  
VGT  
IGT  
Tvj = 25°C,  
VD = 24 V, RA = 0.1 Ω  
2
A
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
0
typ  
typ  
max  
Unit  
Junction operating temperature  
Tvj  
125  
125  
°C  
°C  
Storage temperature range  
Characteristic values  
Parameter  
Tstg  
0
Symbol Conditions  
min  
max  
50  
Unit  
K/kW  
K/kW  
K/kW  
K/kW  
K/kW  
Thermal resistance junction to case  
Rth(jc) Double side cooled  
Rth(jc)A Anode side cooled  
Rth(jc)C Cathode side cooled  
Rth(ch) Single side cooled  
Rth(ch) Double side cooled  
85  
122  
16  
Thermal resistance case to heatsink  
(Double side cooled)  
8
Analytical function for transient thermal  
impedance:  
n
Z
thJC(t) = R  
i
(1-e-t/τ i )  
i=1  
i
1
2
3
4
Ri(K/kW)  
τi(s)  
15.000  
0.4610  
5.200  
0.0950  
7.500  
0.100  
0.0120 0.0010  
Fig. 1 Transient thermal impedance, junction to  
case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1236-00 Jun. 04  
page 3 of 5  
5SGA 06D4502  
Fig. 2 General current and voltage waveforms with GTO-specific symbols.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1236-00 Jun. 04  
page 4 of 5  
5SGA 06D4502  
Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.  
Reverse avalanche capability  
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM  
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse  
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs  
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation :  
VGR = 10…15 V.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1236-00 Jun. 04  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
厂商 型号 描述 页数 下载

ABB

5SGA15F2502 不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ] 9 页

ABB

5SGA20H2501 栅极关断晶闸管[ Gate turn-off Thyristor ] 9 页

ABB

5SGA20H4502 栅极关断晶闸管[ Gate turn-off Thyristor ] 9 页

ETC

5SGA20J4502 晶闸管| GTO | 4.5KV五( DRM ) | TO- 200AE\n[ THYRISTOR|GTO|4.5KV V(DRM)|TO-200AE ] 2 页

ABB

5SGA25H2501 栅极关断晶闸管[ Gate turn-off Thyristor ] 9 页

ABB

5SGA30J2501 栅极关断晶闸管[ Gate turn-off Thyristor ] 6 页

ETC

5SGA30J2502 晶闸管| GTO | 2.5KV五( DRM ) | TO- 200AF\n[ THYRISTOR|GTO|2.5KV V(DRM)|TO-200AF ] 2 页

ABB

5SGA30J4502 不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ] 9 页

ABB

5SGA30J4505 不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ] 10 页

ETC

5SGA30L2501 晶闸管| GTO | 2.5KV五( DRM ) | TO- 200VAR120\n[ THYRISTOR|GTO|2.5KV V(DRM)|TO-200VAR120 ] 2 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.187849s