5SGA 30J2501
GTO Data
On-state
ITAVM
ITRMS
ITSM
Max. average on-state current
1300 A
2040 A
30 kA
51 kA
Half sine wave, TC = 85 °C
Max. RMS on-state current
Max. peak non-repetitive
surge current
tP
tP
=
=
=
10 ms Tj =
125°C
1 ms After surge:
I2t
Limiting load integral
4.5x106 A2s tP
1.3x106 A2s tP
10 ms VD = VR = 0V
1 ms
=
VT
VT0
rT
On-state voltage
Threshold voltage
Slope resistance
Holding current
2.5 V
1.5 V
IT
IT
=
=
3000 A
400 - 4000 A
Tj =
125 °C
0.33
mW
IH
100 A
Tj = 25 °C
Gate
VGT
Gate trigger voltage
Gate trigger current
1.2 V
4 A
VD = 24 V
Tj =
25 °C
IGT
RA
=
0.1 W
VGRM Repetitive peak reverse voltage
IGRM Repetitive peak reverse current
17 V
50 mA
VGR = VGRM
Turn-on switching
di/dtcrit Max. rate of rise of on-state
500 A/µs f = 200Hz IT = 3000 A, Tj = 125 °C
1000 A/µs f = 1Hz IGM = 30 A, diGdt = 20 A/µs
0.5 VDRM Tj 125 °C
di/dt = 300 A/µs
diG/dt = 20 A/µs
current
td
Delay time
2.5 µs
5 µs
VD
IT
=
=
=
=
=
tr
Rise time
3000 A
30 A
ton(min)
Eon
Min. on-time
100 µs
2 Ws
IGM
CS
Turn-on energy per pulse
5 µF RS
=
5
W
Turn-off switching
ITGQM
Max controllable turn-off
3000 A
VDM = VDRM
CS = 5 µF
diGQ/dt = 40 A/µs
current
LS
0.3 µH
VDRM
£
ts
Storage time
25 µs
3 µs
VD = ½ VDRM VDM
Tj
ITGQ = ITGQM
=
tf
Fall time
=
125 °C diGQ/dt =
40 A/µs
toff(min)
Eoff
IGQM
Min. off-time
100 µs
4.7 Ws
1000 A
Turn-off energy per pulse
Peak turn-off gate current
CS
LS
=
5 µF RS
0.3 µH
=
5
W
£
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05
page 2 of 6
