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5SGA30J4505

型号：

5SGA30J4505

描述：

不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

10 页

PDF大小：

237 K

下载PDF手册
VDRM  
ITGQM  
ITSM  
VT0  
=
=
4500 V  
3000 A  
Asymmetric Gate turn-off  
Thyristor  
= 25×103 A  
=
=
=
1.9 V  
0.53  
5SGA 30J4505  
rT  
mW  
2200 V  
VDclink  
Doc. No. 5SYA1204-04 Sept. 05  
· Patented free-floating silicon technology  
· Low on-state and switching losses  
· Annular gate electrode  
· Industry standard housing  
· Cosmic radiation withstand rating  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Repetitive peak off-state  
voltage  
VDRM  
4500  
V
VGR ³ 2 V  
Repetitive peak reverse  
voltage  
VRRM  
17  
V
V
Permanent DC voltage for VDC-link  
100 FIT failure rate  
Ambient cosmic radiation at sea level  
in open air.  
2200  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Repetitive peak off-state  
current  
IDRM  
60  
mA  
VD = VDRM, VGR ³ 2 V  
Repetitive peak reverse  
current  
IRRM  
20  
mA  
VR = VRRM, RGK = ¥ W  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Mounting force  
Characteristic values  
Parameter  
Fm  
36  
40  
44  
kN  
Symbol Conditions  
min  
typ  
max  
Unit  
mm  
mm  
kg  
Pole-piece diameter  
Housing thickness  
Weight  
Dp  
H
± 0.1 mm  
75  
25.6  
26.0  
1.3  
m
Surface creepage distance Ds  
Air strike distance Da  
Anode to Gate  
Anode to Gate  
33  
15  
mm  
mm  
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SGA 30J4505  
GTO Data  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
IT(AV)M Half sine wave, TC = 85 °C  
min  
typ  
max  
Unit  
Max. average on-state  
current  
1000  
A
Max. RMS on-state current IT(RMS)  
1570  
25×103  
A
A
Max. peak non-repetitive  
surge current  
ITSM  
tp = ms, Tvj = 125°C, sine wave  
After Surge: VD = VR = 0 V  
Limiting load integral  
I2t  
3.1×106 A2s  
45×103  
Max. peak non-repetitive  
surge current  
ITSM  
tp = ms, Tvj = 125°C, sine wave  
After Surge: VD = VR = 0 V  
A
Limiting load integral  
Characteristic values  
Parameter  
I2t  
1.01×106 A2s  
Symbol Conditions  
min  
typ  
max  
3.5  
Unit  
V
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
V(T0)  
rT  
IT = 3000 A, Tvj = 125°C  
Tvj = 125°C  
IT = 500...4000 A  
1.9  
V
0.53  
mW  
IH  
Tvj = 25°C  
50  
A
Turn-on switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
Critical rate of rise of on-  
state current  
diT/dtcr  
400  
A/µs  
f = 200 Hz  
f = 1 Hz  
Tvj = 125°C,  
IT = 3000 A, IGM = 30 A,  
diG/dt = 20 A/µs  
Critical rate of rise of on-  
state current  
diT/dtcr  
ton  
800  
A/µs  
µs  
Min. on-time  
VD = 0.5 VDRM, Tvj = 125 °C  
IT = 3000 A, di/dt = 200 A/µs,  
IGM = 30 A, diG/dt = 20 A/µs,  
CS = 6 µF, RS = 5 W  
100  
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
typ  
max  
Unit  
µs  
µs  
J
Turn-on delay time  
Rise time  
td  
VD = 0.5 VDRM, Tvj = 125 °C  
3
6
3
IT = 3000 A, di/dt = 200 A/µs,  
IGM = 30 A, diG/dt = 20 A/µs,  
CS = 6 µF, RS = 5 W  
tr  
Turn-on energy per pulse  
Eon  
Turn-off switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
ITGQM  
min  
max  
Unit  
Max. controllable turn-off  
current  
3000  
A
VDM £ VDRM, diGQ/dt = 40 A/µs,  
CS = 6 µF, LS £ 0.3 µH  
Min. off-time  
toff  
VD = 0.5 VDRM, Tvj = 125 °C  
100  
µs  
V
DM £ VDRM, diGQ/dt = 40 A/µs,  
ITGQ = ITGQM  
RS = 5 W, CS = 6 µF, LS = 0.3 µH  
,
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
25  
Unit  
µs  
µs  
J
Storage time  
tS  
tf  
VD = 0.5 VDRM, Tvj = 125 °C  
DM £ VDRM, diGQ/dt = 40 A/µs,  
ITGQ = ITGQM  
RS = 5 W, CS = 6 µF, LS = 0.3 µH  
V
Fall time  
3
,
Turn-on energy per pulse  
Peak turn-off gate current  
Eoff  
IGQM  
11  
900  
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1204-04 Sept. 05  
page 2 of 10  
5SGA 30J4505  
Gate  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
max  
Unit  
Repetitive peak reverse  
voltage  
VGRM  
17  
V
Repetitive peak reverse  
current  
Characteristic values  
IGRM  
20  
mA  
VGR = VGRM  
Parameter  
Symbol Conditions  
typ  
1
max  
Unit  
V
Gate trigger voltage  
Gate trigger current  
VGT  
IGT  
Tvj = 25°C,  
VD = 24 V, RA = 0.1 W  
3
A
Thermal  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
0
typ  
typ  
max  
Unit  
Junction operating temperature  
Tvj  
125  
125  
°C  
°C  
Storage temperature range  
Characteristic values  
Parameter  
Tstg  
0
Symbol Conditions  
min  
max  
12  
22  
27  
6
Unit  
K/kW  
K/kW  
K/kW  
K/kW  
K/kW  
Thermal resistance junction to case  
Rth(j-c) Double side cooled  
Rth(j-c)A Anode side cooled  
Rth(j-c)C Cathode side cooled  
Thermal resistance case to heatsink Rth(c-h) Single side cooled  
(Double side cooled)  
Rth(c-h) Double side cooled  
3
Analytical function for transient thermal  
impedance:  
n
Z
th(j - c)(t)= R  
i
(1- e-t/t i )  
å
i=1  
i
1
2
3
4
Ri(K/kW)  
5.400  
1.2000  
4.500  
0.1700  
1.700  
0.400  
0.0100 0.0010  
ti(s)  
Fig. 1 Transient thermal impedance, junction to case  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1204-04 Sept. 05  
page 3 of 10  
5SGA 30J4505  
Fig. 2 On-state characteristics  
Fig. 3 Average on-state power dissipation vs.  
average on-state current  
Fig. 4 Surge current and fusing integral vs. pulse  
width  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1204-04 Sept. 05  
page 4 of 10  
5SGA 30J4505  
Fig. 5 Forward blocking voltage vs. gate-cathode  
Fig. 6 Static dv/dt capability; forward blocking  
resistance  
voltage vs. neg. gate voltage or gate cathode  
resistance  
Fig. 7 Forward gate current vs. forward gate voltage  
Fig. 8 Gate trigger current vs. junction temperature  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1204-04 Sept. 05  
page 5 of 10  
5SGA 30J4505  
Fig. 9 Turn-on energy per pulse vs. on-state current  
Fig. 10 Turn-on energy per pulse vs. on-state current  
and turn-on voltage  
and current rise rate  
Common Test conditions:  
diG/dt  
CS  
= 20 A/µs  
= 6 µF  
RS  
= 5 W  
Tj  
= 125 °C  
Definition of Turn-on energy:  
20ms  
Eon =  
VD ×ITdt (t = 0, IG = 0.1×IGM )  
ò
0
Definition of Turn-off energy:  
40ms  
E
off  
=
V
D
× I  
T
dt ( t = 0, I = 0.9 × ITGQ )  
T
ò
0
Fig. 11 Turn-on energy per pulse vs. on-state current  
and turn-on voltage  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1204-04 Sept. 05  
page 6 of 10  
5SGA 30J4505  
Fig. 12 Turn-off energy per pulse vs. turn-off current  
and peak turn-off voltage, extracted gate  
charge vs. turn-off current  
Fig. 13 Turn-off energy per pulse vs. turn-off current  
and snubber capacitance  
Fig. 14 Required snubber capacitor vs. max  
Fig. 15 Turn-off energy per pulse, storage time and  
peak turn-off gate current vs. junction  
temperature  
allowable turn-off current  
ts [µs]  
IGQM [A]  
1000  
IGQM [A]  
1000  
ts [ms]  
50  
50  
tS  
IGQM  
40  
30  
20  
10  
0
800  
600  
400  
200  
0
40  
30  
20  
10  
800  
600  
400  
200  
0
IGQM  
tS  
diGQ/dt =40 A/ms  
Tj = 125 °C  
ITGQ = 3000 A  
Tj = 125 °C  
0
0
0
10  
20  
30  
40  
50  
60  
500  
1000  
1500  
2000  
2500  
3000  
ITGQ [A]  
diGQ/dt [A/ms]  
Fig. 16 Storage time and peak turn-off gate current  
Fig. 17 Storage time and peak turn-off gate current  
vs. neg. gate current rise rate  
vs. turn-off current  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1204-04 Sept. 05  
page 7 of 10  
5SGA 30J4505  
Fig. 18 General current and voltage waveforms with GTO-specific symbols  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1204-04 Sept. 05  
page 8 of 10  
5SGA 30J4505  
Fig. 19 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1204-04 Sept. 05  
page 9 of 10  
5SGA 30J4505  
Reverse avalanche capability  
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM  
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse  
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs  
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR  
10… 15 V.  
=
Related documents:  
5SYA 2036  
5SYA 2046  
5SZK 9104  
5SZK 9105  
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors  
Cosmic Ray  
Specification of enviromental class for pressure contact GTO, STORAGE available on request, please contact factory  
Specification of enviromental class for pressure contact GTO, TRANSPORTATION available on request, please contact  
factory  
Please refer to http://www.abb.com/semiconductors for current version of documents.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1204-04 Sept. 05  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
厂商 型号 描述 页数 下载

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ETC

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ETC

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ETC

 		5SGA30L2501 晶闸管| GTO | 2.5KV五（ DRM ） | TO- 200VAR120\n[ THYRISTOR|GTO|2.5KV V(DRM)|TO-200VAR120 ] 2 页

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