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5SGA20H2501

型号：

5SGA20H2501

描述：

栅极关断晶闸管[ Gate turn-off Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

312 K

下载PDF手册
VDRM = 2500 V  
ITGQM = 2000 A  
Gate turn-off Thyristor  
ITSM  
VT0  
rT  
=
=
=
16 kA  
1.66 V  
5SGA 20H2501  
0.57  
mΩ  
VDClin = 1400 V  
Doc. No. 5SYA1205-01 Jun. 04  
• Patented free-floating silicon technology  
• Low on-state and switching losses  
• Annular gate electrode  
• Industry standard housing  
• Cosmic radiation withstand rating  
Blocking  
VDRM  
VRRM  
IDRM  
Repetitive peak off-state voltage  
Repetitive peak reverse voltage  
Repetitive peak off-state current  
Repetitive peak reverse current  
2500 V  
17 V  
VGR ≥ 2V  
30 mA  
50 mA  
1400 V  
VD = VDRM  
VR = VRRM  
≤
≤
VGR ≥ 2V  
RGK = ∞  
IRRM  
VDClink Permanent DC voltage for 100  
FIT failure rate  
-40 ≤ Tj ≤ 125 °C. Ambient cosmic  
radiation at sea level in open air.  
Mechanical data (see Fig. 19)  
Fm  
min.  
17 kN  
24 kN  
Mounting force  
max.  
A
Acceleration:  
50 m/s2  
200 m/s2  
Device unclamped  
Device clamped  
M
Weight  
0.8 kg  
22 mm  
13 mm  
DS  
Da  
Surface creepage distance  
Air strike distance  
≥
≥
ABB Semiconductors AG reserves the right to change specifications without notice.  
5SGA 20H2501  
GTO Data  
On-state  
ITAVM  
ITRMS  
ITSM  
Max. average on-state current  
830 A  
1300 A  
16 kA  
32 kA  
Half sine wave, TC = 85 °C  
Max. RMS on-state current  
Max. peak non-repetitive  
surge current  
tP  
tP  
tP  
=
=
=
10 ms Tj = 125°C  
1 ms After surge:  
10 ms VD = VR = 0V  
I2t  
Limiting load integral  
A2s  
A2s  
1.28⋅106  
0.51⋅106  
tP  
IT  
=
=
1 ms  
VT  
VT0  
rT  
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
2.80 V  
1.66 V  
0.57  
2000 A  
IT = 200 - 2500 A  
Tj = 125 °C  
mΩ  
50 A  
IH  
Tj = 25 °C  
Gate  
VGT  
Gate trigger voltage  
Gate trigger current  
1.0 V  
2.5 A  
17 V  
VD = 24 V  
Tj =  
25 °C  
IGT  
RA  
=
0.1 Ω  
VGRM Repetitive peak reverse voltage  
IGRM Repetitive peak reverse current  
50 mA VG = VGRM  
Turn-on switching  
di/dtcrit Max. rate of rise of on-state  
400 A/µs f = 200Hz IT = 2000 A, Tj = 125 °C  
700 A/µs f = 1Hz IGM = 30 A, diG/dt = 20 A/µs  
0.5 VDRM Tj 125 °C  
di/dt = 200 A/µs  
diG/dt = 20 A/µs  
current  
td  
Delay time  
1.5 µs  
3.5 µs  
VD =  
=
tr  
Rise time  
IT  
=
=
2000 A  
30 A  
ton(min)  
Eon  
Min. on-time  
80 µs  
IGM  
Turn-on energy per pulse  
0.75 Ws  
CS =  
4 µF RS  
=
5
Ω
Turn-off switching  
ITGQM  
Max controllable turn-off  
2000 A  
VDM = VDRM  
CS = 4 µF  
diGQ/dt = 30 A/µs  
current  
LS  
0.3 µH  
VDRM  
≤
ts  
Storage time  
22.0 µs  
2.0 µs  
80 µs  
VD = ½ VDRM VDM  
Tj  
ITGQ = ITGQM  
=
tf  
Fall time  
=
125 °C diGQ/dt =  
30 A/µs  
toff(min)  
Eoff  
IGQM  
Min. off-time  
Turn-off energy per pulse  
Peak turn-off gate current  
3.5 Ws  
700 A  
CS  
LS  
=
4 µF RS  
0.3 µH  
=
5
Ω
≤
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1205-01 Jun. 04  
page 2 of 9  
5SGA 20H2501  
Thermal  
Tj  
Storage and operating  
-40...125°C  
junction temperature range  
RthJC  
Thermal resistance  
junction to case  
30 K/kW Anode side cooled  
39 K/kW Cathode side cooled  
17 K/kW Double side cooled  
10 K/kW Single side cooled  
5 K/kW Double side cooled  
RthCH  
Thermal resistance case to  
heat sink  
Analytical function for transient thermal  
impedance:  
i
1
2
3
4
4
RI (K/kW) 11.7  
0.9  
4.7  
0.26  
0.64  
0.0001  
ZthJC (t) =  
R )  
(1 - e -t /τi  
i
∑
0.002  
0.001  
τi (s)  
i
=
1  
Fig. 1 Transient thermal impedance, junction to case.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1205-01 Jun. 04  
page 3 of 9  
5SGA 20H2501  
Fig. 2 On-state characteristics  
Fig. 3 Average on-state power dissipation vs.  
average on-state current.  
Fig. 4 Surge current and fusing integral vs. pulse  
width  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1205-01 Jun. 04  
page 4 of 9  
5SGA 20H2501  
Fig. 5 Forward blocking voltage vs. gate-cathode  
Fig. 6 Static dv/dt capability: Forward blocking  
voltage vs. neg. gate voltage or gate  
cathode resistance.  
resistance.  
Fig. 7 Forwarde gate current vs. forard gate  
Fig. 8 Gate trigger current vs. junction  
voltage.  
temperature  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1205-01 Jun. 04  
page 5 of 9  
5SGA 20H2501  
Fig. 9 Turn-on energy per pulse vs. on-state  
Fig. 10 Turn-on energy per pulse vs. on.-state  
current and turn-on voltage.  
current and current rise rate  
Common Test conditions for figures 9, 10 and 11:  
diG/dt = 20 A/µs  
CS  
RS  
Tj  
= 4 µF  
= 5 Ω  
= 125 °C  
Definition of Turn-on energy:  
20µs  
Eon =  
VD ⋅ITdt (t = 0, IG = 0.1⋅IGM )  
∫
0
Common Test conditions for figures 12, 13 and 15:  
Definition of Turn-off energy:  
40µs  
E
off  
=
V
D
⋅ I  
T
dt ( t = 0, I = 0.9 ⋅ ITGQ )  
T
∫
0
Fig. 11 Turn-on energy per pulse vs. on-state  
current and turn-on voltage.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1205-01 Jun. 04  
page 6 of 9  
5SGA 20H2501  
Eoff [J]  
µ
Eoff [J]  
QGQa [ C]  
7000  
5SGA 20H2501  
5SGA 20H2501  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
Conditions:  
VD = 0.75 VDM , VDM = VDRM  
Conditions:  
µ
CS = 4  
F
⋅
VD = 0.5 VDM  
µ
di GQ/dt = 30 A/  
s
6000  
5000  
4000  
3000  
2000  
1000  
µ
QGQa  
di GQ / dt = 30 A/ s  
Ω
RS = 5  
µ
Ω
CS = 4 F, RS = 5  
Tj = 125°C  
Tj = 125°C  
VDM=VDRM  
µ
CS = 3  
F
0.75 V  
DRM  
0.5 VDRM  
µ
CS = 6  
F
0
500  
1000  
1500  
2000  
ITGQ [A]  
0
500  
1000  
1500  
2000  
ITGQ [A]  
Fig. 12 Turn-off energy per pulse vs. turn-off current Fig. 13 Turn-off energy per pulse vs. turn-off  
and peak turn-off voltage. Extracted gate  
charge vs. turn-off current.  
current and snubber capacitance.  
µ
Eoff[J] ts [ s]  
IGQM [A]  
1000  
5SGA 20H2501  
5
4
3
2
1
0
50  
40  
30  
20  
10  
0
800  
600  
400  
200  
0
IGQM  
EOFF  
tS  
Conditions:  
VD = 0.5 VDM , VDM = VDRM  
ITGQ = 2000 A ,di GQ /dt = 30 A/ s  
µ
µ
Ω
CS = 4 F, RS = 5 , Tj = 125 °C  
-10  
0
0
10 20 30 40 50 60 70 80 90 100 110 120  
25 50 75 100 125  
Tj [°C]  
Fig. 14 Required snubber capacitor vs. max  
Fig. 15 Turn-off energy per pulse, storage time  
and peak turn-off gate current vs. junction  
temperature  
allowable turn-off current.  
IGQM [A]  
IGQM [A]  
ts [s]  
50  
ts [s]  
50  
5SGA 20H2501  
5SGA 20H2501  
1000  
1000  
40  
30  
20  
10  
0
800  
600  
400  
200  
0
40  
30  
20  
10  
0
800  
600  
400  
200  
0
tS  
IGQM  
IGQM  
Conditions:  
Conditions:  
tS  
diGQ/dt = 30 A/µs  
ITGQ = 2000 A  
Tj = 125 °C  
Tj = 125 °C  
0
500  
1000  
1500  
2000  
ITGQ [A]  
0
10  
20  
30  
40  
50  
60  
diGQ/dt [A/µs]  
Fig. 16 Storage time and peak turn-off gate current  
Fig. 17 Storage time and peak turn-off gate  
vs. neg. gate current rise rate.  
current vs. turn-off current  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1205-01 Jun. 04  
page 7 of 9  
5SGA 20H2501  
Fig. 18 General current and voltage waveforms with GTO-specific symbols  
Fig. 19 Outline drawing. All dimensions are in  
millimeters and represent nominal values  
unless stated otherwise.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1205-01 Jun. 04  
page 8 of 9  
5SGA 20H2501  
Reverse avalanche capability  
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate  
value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then  
driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time  
and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative  
during this time. Recommendation : VGR = 10… 15 V.  
ABB Semiconductors AG reserves the right to change specifications without notice.  
ABB Semiconductors AG  
Fabrikstrasse 3  
Doc. No. 5SYA1205-01 Jun. 04  
CH-5600 Lenzburg, Switzerland  
Tel:  
Fax:  
E-mail  
Internet  
+41 (0)62 888 6419  
+41 (0)62 888 6306  
info@ch.abb.com  
www.abbsem.com  
厂商 型号 描述 页数 下载

ABB

 		5SGA06D4502 不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ] 5 页

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 		5SGA15F2502 不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ] 9 页

ABB

 		5SGA20H4502 栅极关断晶闸管[ Gate turn-off Thyristor ] 9 页

ETC

 		5SGA20J4502 晶闸管| GTO | 4.5KV五（ DRM ） | TO- 200AE\n[ THYRISTOR|GTO|4.5KV V(DRM)|TO-200AE ] 2 页

ABB

 		5SGA25H2501 栅极关断晶闸管[ Gate turn-off Thyristor ] 9 页

ABB

 		5SGA30J2501 栅极关断晶闸管[ Gate turn-off Thyristor ] 6 页

ETC

 		5SGA30J2502 晶闸管| GTO | 2.5KV五（ DRM ） | TO- 200AF\n[ THYRISTOR|GTO|2.5KV V(DRM)|TO-200AF ] 2 页

ABB

 		5SGA30J4502 不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ] 9 页

ABB

 		5SGA30J4505 不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ] 10 页

ETC

 		5SGA30L2501 晶闸管| GTO | 2.5KV五（ DRM ） | TO- 200VAR120\n[ THYRISTOR|GTO|2.5KV V(DRM)|TO-200VAR120 ] 2 页

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