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5SGA30J4502

型号：

5SGA30J4502

描述：

不对称的门关断晶闸管[ Asymmetric Gate turn-off Thyristor ]

品牌：

ABB[ THE ABB GROUP ]

页数：

9 页

PDF大小：

365 K

下载PDF手册
VDRM  
ITGQM  
ITSM  
VT0  
=
=
4500 V  
3000 A  
Asymmetric Gate turn-off  
Thyristor  
= 24×103 A  
=
=
=
2.2 V  
0.6  
5SGA 30J4502  
rT  
mΩ  
2800 V  
VDclink  
Doc. No. 5SYA1202-03 Jan. 03  
• Patented free-floating silicon technology  
• Low on-state and switching losses  
• Annular gate electrode  
• Industry standard housing  
• Cosmic radiation withstand rating  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
min  
typ  
typ  
max  
4500  
Unit  
V
Repetitive peak off-state  
VDRM  
VGR ≥ 2 V  
voltage  
Repetitive peak reverse  
voltage  
VRRM  
17  
V
V
Permanent DC voltage for VDclink  
Ambient cosmic radiation at sea level  
in open air.  
2800  
100 FIT failure rate  
Characteristic values  
Parameter  
Symbol Conditions  
max  
Unit  
Repetitive peak off-state  
IDRM  
60  
mA  
VD = VDRM, VGR ≥ 2 V  
current  
Repetitive peak reverse  
current  
IRRM  
20  
mA  
VR = VRRM, RGK = ∞ Ω  
Mechanical data  
Maximum rated values 1)  
Parameter  
Mounting force  
Characteristic values  
Parameter  
Pole-piece diameter  
Housing thickness  
Weight  
Symbol Conditions  
Fm  
min  
36  
typ  
40  
max  
44  
Unit  
kN  
Symbol Conditions  
min  
typ  
75  
26  
max  
Unit  
mm  
mm  
kg  
Dp  
± 0.1 mm  
H
± 0.5 mm  
m
1.3  
Surface creepage distance Ds  
Air strike distance Da  
Anode to Gate  
Anode to Gate  
33  
15  
mm  
mm  
1) Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
5SGA 30J4502  
GTO Data  
On-state  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
ITAVM Half sine wave, TC = 85 °C  
min  
typ  
max  
930  
Unit  
A
Max. average on-state  
current  
Max. RMS on-state current ITRMS  
1460  
A
A
Max. peak non-repetitive  
ITSM  
tp = 10 ms, Tvj = 125°C, sine wave  
After Surge: VD = VR = 0 V  
24×103  
surge current  
Limiting load integral  
I2t  
2.88×106 A2s  
40×103  
Max. peak non-repetitive  
ITSM  
tp = 1 ms, Tvj = 125°C, sine wave  
After Surge: VD = VR = 0 V  
A
surge current  
Limiting load integral  
Characteristic values  
Parameter  
I2t  
800×103 A2s  
Symbol Conditions  
min  
min  
typ  
max  
4
2.2  
0.6  
Unit  
V
V
mΩ  
A
On-state voltage  
Threshold voltage  
Slope resistance  
Holding current  
VT  
V(T0)  
rT  
IT = 3000 A, Tvj = 125°C  
Tvj = 125°C  
IT = 300...4000 A  
IH  
Tvj = 25°C  
50  
Turn-on switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
diT/dtcr  
typ  
typ  
max  
400  
Unit  
A/µs  
Critical rate of rise of on-  
f = 200 Hz  
f = 1 Hz  
Tvj = 125°C,  
state current  
IT = 3000 A, IGM = 30 A,  
Critical rate of rise of on-  
state current  
Min. on-time  
Characteristic values  
Parameter  
diT/dtcr  
ton  
800  
A/µs  
µs  
diG/dt = 20 A/µs  
100  
Symbol Conditions  
min  
max  
3
6
Unit  
µs  
µs  
J
Turn-on delay time  
td  
VD = 0.5 VDRM, Tvj = 125 °C  
IT = 3000 A, di/dt = 200 A/µs,  
Rise time  
tr  
IGM = 30 A, diG/dt = 20 A/µs, CS = 6  
Turn-on energy per pulse  
Eon  
3.6  
µF, RS = 5 Ω  
Turn-off switching  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
ITGQM  
min  
typ  
typ  
max  
3000  
Unit  
A
Max. controllable turn-off  
V
DM ≤ VDRM, diGQ/dt = 40 A/µs,  
current  
CS = 6 µF, LS ≤ 0.3 µH  
Min. off-time  
Characteristic values  
Parameter  
Storage time  
Fall time  
Turn-on energy per pulse  
Peak turn-off gate current  
toff  
Symbol Conditions  
80  
µs  
min  
max  
25  
3
13  
900  
Unit  
µs  
µs  
J
tS  
tf  
Eoff  
IGQM  
VD = 0.5 VDRM, Tvj = 125 °C  
DM ≤ VDRM, diGQ/dt = 40 A/µs,  
ITGQ = ITGQM  
RS = 5Ω, CS = 6 µF, LS = 0.3 µH  
V
,
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1202-03 Jan. 03  
page 2 of 9  
5SGA 30J4502  
Gate  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
VGRM  
min  
min  
typ  
max  
17  
Unit  
V
Repetetive peak reverse  
voltage  
Repetetive peak reverse  
current  
IGRM  
20  
mA  
VGR = VGRM  
Characteristic values  
Parameter  
Symbol Conditions  
typ  
1
3
max  
Unit  
V
A
Gate trigger voltage  
Gate trigger current  
VGT  
IGT  
Tvj = 25°C,  
VD = 24 V, RA = 0.1 Ω  
Thermal  
Maximum rated values 1)  
Parameter  
Junction operating temperature  
Storage temperature range  
Characteristic values  
Parameter  
Symbol Conditions  
min  
-40  
-40  
typ  
typ  
max  
125  
125  
Unit  
°C  
°C  
Tvj  
Tstg  
Symbol Conditions  
min  
max  
12  
22  
27  
6
Unit  
K/kW  
K/kW  
K/kW  
K/kW  
K/kW  
Thermal resistance junction to case  
Rth(jc) Double side cooled  
Rth(jc)A Anode side cooled  
Rth(jc)C Cathode side cooled  
Rth(ch) Single side cooled  
Rth(ch) Double side cooled  
Thermal resistance case to heatsink  
(Double side cooled)  
3
Analytical function for transient thermal  
impedance:  
n
(t) = åR  
Z
thJC  
i
(1-e-t/τ i )  
i=1  
i
1
2
3
4
Ri(K/kW)  
5.400  
1.2000  
4.500  
0.1700  
1.700  
0.0100 0.0010  
0.400  
τi(s)  
Fig. 1 Transient thermal impedance, junction to  
case.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1202-03 Jan. 03  
page 3 of 9  
5SGA 30J4502  
IT [A]  
3000  
PAV [kW]  
5.00  
4.50  
4.00  
3.50  
3.00  
2.50  
2.00  
1.50  
1.00  
0.50  
0.00  
125°C  
25°C  
2500  
2000  
1500  
1000  
500  
DC  
180° Rect.  
180° Sine  
120° Rect.  
60° Rect.  
0
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
250  
500  
750  
1000  
1250  
1500  
ITAV [V]  
VT [V]  
Fig. 2 On-state characteristics.  
Fig. 3 Average on-state power dissipation vs.  
average on-state current..  
2
ò 2  
i dt [A s]  
1.E+07  
ITSM [kA]  
100.00  
Itsm  
òI2td  
1.E+06  
10.00  
Conditions:  
Before surge: T j = 125°C  
After surge: VD = 0V  
1.E+05  
1.00  
0
1
10  
100  
tp [ms]  
Fig. 4 Surge current and fusing integral vs. pulse  
width.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1202-03 Jan. 03  
page 4 of 9  
5SGA 30J4502  
Fig. 5 Forward blocking voltage vs. gate-cathode  
Fig. 6 Static dv/dt capability: Forward blocking  
resistance..  
voltage vs. neg. gate voltage or gate cathode  
resistance.  
Fig. 7 Forward gate current vs. forard gate voltage.  
Fig. 8 Gate trigger current vs. junction temperature  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1202-03 Jan. 03  
page 5 of 9  
5SGA 30J4502  
Fig. 9 Turn-on energy per pulse vs. on-state current  
Fig. 10 Turn-on energy per pulse vs. on.-state current  
and turn-on voltage.  
and current rise rate  
Common Test conditions for figures 9, 10 and 11:  
diG/dt  
CS  
= 20 A/µs  
= 6 µF  
RS  
= 5 Ω  
Tj  
= 125 °C  
Definition of Turn-on energy:  
20µs  
Eon =  
(t = 0, IG = 0.1⋅IGM )  
òVD ⋅ITdt  
0
Common Test conditions for figures 12, 13 and 15:  
Definition of Turn-off energy:  
40µs  
E
off  
=
D
⋅ I  
T
dt ( t = 0, I = 0.9 ⋅ ITGQ )  
T
òV  
0
Fig. 11 Turn-on energy per pulse vs. on-state current  
and turn-on voltage.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1202-03 Jan. 03  
page 6 of 9  
5SGA 30J4502  
Eoff [J]  
14  
QGQa [A]  
10000  
Eoff [J]  
18  
16  
14  
12  
10  
8
Conditions:  
µ
CS = 4 F  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
⋅
VD = ½ VDRM  
12  
10  
8
µ
diGQ/dt = 40 A/  
s
QGQa  
µ
CS = 3 F  
µ
Ω
CS = 6 F, RS = 5  
Tj = 125°C  
µ
CS = 6 F  
VDM=VDRM  
¾ VDRM  
½ VDRM  
6
6
4
4
Conditions:  
2
µ
diGQ/dt =40 A/ s  
2
Tj = 125 °C  
0
0
0
0
500  
1000  
1500  
2000  
2500  
3000  
500  
1000  
1500  
2000  
2500  
3000  
ITGQ [A]  
ITGQ [A]  
Fig. 12 Turn-off energy per pulse vs. turn-off current  
and peak turn-off voltage. Extracted gate  
charge vs. turn-off current.  
Fig. 13 Turn-off energy per pulse vs. turn-off current  
and snubber capacitance.  
Eoff[J]  
µ
ts [ s]  
IGQM [A]  
µ
Cs [ F]  
30 50  
1000  
6
5
4
3
2
1
IGQM  
Condition:  
⋅
VD = ½ VDRM, VDM = VDRM  
24 40  
18 30  
12 20  
800  
600  
400  
200  
0
µ
diGQ/dt = 40 A/ s  
Ω
≤
R
S = 5 , LS 300 nH  
tS  
Eoff  
6
0
10  
0
µ
Condition:  
diGQ/dt = 40 A/ s  
Tj = 125 °C  
1000  
1500  
2000  
2500  
3000  
-10  
0
10 202530 40 50 60 707580 90 100 110 121025  
Tj [°C]  
IGQM [A]  
Fig. 14 Required snubber capacitor vs. max  
Fig. 15 Turn-off energy per pulse, storage time and  
peak turn-off gate current vs. junction  
temperature.  
allowable turn-off current.  
IGQM [A]  
IGQM [A]  
ts [s]  
ts [s]  
50  
1000  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
1000  
800  
600  
400  
200  
0
45  
900  
800  
700  
600  
500  
400  
300  
200  
100  
IGQM  
40  
35  
30  
tS  
25  
20  
15  
10  
5
IGQM  
Conditions:  
ITGQ = 3000 A  
Tj = 125 °C  
tS  
Conditions:  
µ
diGQ/dt =40 A/ s  
Tj = 125 °C  
0
0
0
0
10  
20  
30  
40  
50  
60  
0
500  
1000  
1500  
2000  
2500  
3000  
ITGQ [A]  
µ
diGQ/dt [A/ s]  
Fig. 16 Storage time and peak turn-off gate current  
Fig. 17 Storage time and peak turn-off gate current  
vs. neg. gate current rise rate.  
vs. turn-off current.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1202-03 Jan. 03  
page 7 of 9  
5SGA 30J4502  
Fig. 18 General current and voltage waveforms with GTO-specific symbols.  
Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1202-03 Jan. 03  
page 8 of 9  
5SGA 30J4502  
Reverse avalanche capability  
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM  
due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse  
avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs  
and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : V
GR  
10… 15 V.  
=
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
ABB Switzerland Ltd  
Semiconductors  
Doc. No. 5SYA1202-03 Jan. 03  
Fabrikstrasse 3  
CH-5600 Lenzburg, Switzerland  
Telephone +41 (0)58 586 1419  
Fax  
+41 (0)58 586 1306  
Email  
Internet  
abbsem@ch.abb.com  
www.abb.com/semiconductors  
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