WTM2222A
NPN Epitaxial Planar Transistors
SOT-89
P b
Lead(Pb)-Free
1
2
1. BASE
2. COLLECTOR
Features:
* Low Collector Saturation Voltage
* High Spwwd Switching
3
3. EMITTER
* For Complementary Use With PNP Type WTM2907A
ABSOLUTE MAXIMUM RATINGS (T =25˚C)
A
Rating
Symbol
Limits
Unit
V
V
Collector-Base Voltage
CBO
75
V
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CEO
40
V
EBO
6.0
I
A
0.6
1.2
C
Collector Power Dissipation
Junction Temperature
W
P
D
T
j
+150
˚C
˚C
T
-55 to +150
Storage Temperature Range
stg
Device Marking
WTM2222A = 2222A , 1P
ELECTRICAL CHARACTERISTICS(T =25˚Cunless otherwise noted)
A
Min
Typ
Parameter
Symbol
Max
Unit
Collector-Base Breakdown Voltage
I =10µA
C
BV
BV
BV
75
-
-
V
V
CBO
CEO
EBO
CBO
CEX
Collector-Emitter Breakdown Voltage
I =10mA
C
40
6.0
-
-
-
-
-
-
-
Emitter-Base Breakdown Voltage
I =10µA
E
-
V
Collector Cutoff Current
I
I
I
10
10
50
nA
nA
nA
V =60V
CB
Collector Cutoff Current
=60V, V =3.0V
-
V
CB
EB(off)
Collector Cutoff Current
-
EBO
V
EB
=3.0V
WEITRON
http://www.weitron.com.tw
1/4
06-Apr-06
