WTM1624
NPN EPITAXIAL PLANAR TRANSISTOR
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Description
The WTM1624 applies to voltage regulators,
relay drivers,lamp drivers,and electrical equipment.
SOT-89
Features
Adoption of FBET, MBIT processes
Low collector-to-emitter saturation voltage
Fast switching speed
Large current capacity and wide ASO
Absolute Maximum Ratings at T = 25
A
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse) (Note1)
V
CBO
60
50
6
V
V
VCEO
V
EBO
V
I
C
3
A
I
CP
6
A
Total Power Dissipation
PD
0.5
W
Note 1: Single pulse, PW=10ms
Electrical Characteristics (Ta = 25 , unless otherwise stated)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
60
50
6
-
-
-
-
100
-
-
-
-
-
-
-
-
-
1
1
0.5
1.2
560
-
V
V
V
uA
uA
V
I
I
I
V
V
I
I
V
V
V
C
C
=10uA , I
=1mA, IB
E
=0
=0
=0
=0
=0
E=10uA ,IC
I
I
CBO
CB=40V, I
EB=4V, IC
E
EBO
*VCE(sat)
*VBE(sat)
*hFE
0.19
0.94
-
C
=2A, I
B
=100mA
=100mA
V
C=2A, I
B
CE=2V, I
C
=100mA
CE=10V, I =50mA
CB=10V, IE=0, f=1MHz
fT
150
MHz
C
Cob
tstg
tf
-
-
-
25
650
35
-
-
-
pF
ns
ns
See test circuit
*Measured under pulse condition. Pulse widthfi380fls, Duty Cyclefi2%
Classification of hFE
Rank
R
S
T
U
Range
100 - 200
140 - 280
200 - 400
280 - 560
WEITRON
http://www.weitron.com.tw
1/4
28-Dec-07
