WTM1797
PNP EPITAXIAL PLANAR TRANSISTOR
P b
Lead(Pb)-Free
1. BASE
2. COLLECTOR
3. EMITTER
1
FEATURES
2
3
* Low saturation voltage
* Excellent DC current gain characteristics
* Complements to 2SC4672
SOT-89
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Units
Value
-50
V
V
V
-50
-6
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
-2
A
mW
℃
PC
500
150
TJ
Storage Temperature
Tstg
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
-50
-50
-6
-
TYP
MAX
UNIT
V
V(BR)CBO
-
-
-
-
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-50?A, IE=0
V(BR)CEO IC=-1mA, IB=0
-
V
-
-
V(BR)EBO
ICBO
V
IE=-50?A, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
-0.1
-0.1
270
-0.35
-
?A
?A
-
-
Emitter cut-off current
IEBO
DC current gain
hFE
VCE=-2V, IC=-500mA
82
-
-
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
IC=-1A, IB=-50mA
-
V
-
VCE=-2V, IC=-0.5A, f=100MHz
VCB=-10V, IE=0, f=1MHz
200
36
MHz
pF
-
-
Collector output capacitance
Cob
CLASSIFICATION OF hFE
Rank
P
Q
Range
82-180
AGP
120-270
Marking
AGQ
WEITRON
http://www.weitron.com.tw
1/3
14-Oct-08
