WTM2310A
Electrical Characteristics (Tj = 25 unless otherwise specified)
к
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
VGS=0, ID=250uA
VDS=VGS, ID=250uA
VDS=15V, ID=4A
VGS= ±20V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
60
-
-
V
BVDSS
VGS(th)
gfs
0.5
-
-
1.5
V
Forward Transconductance
12
-
-
S
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
Drain-Source Leakage Current(Tj=55к)
-
±100
nA
uA
uA
IGSS
-
-
1
VDS=60V, VGS=0
VDS=60V, VGS=0
VGS=10V, ID=5.0A
VGS=4.5V, ID=4.5A
IDSS
-
-
10
-
-
115
mӨ
Static Drain-Source On-Resistance
RDS(ON)
-
-
125
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
4.0
1.2
1.0
6
-
-
-
-
-
-
-
-
-
-
Qg
Qgs
Qgd
Td(on)
Tr
ID=4A
VDS=30V
nC
-
VGS=4.5V
-
-
VDD=30V
ID=2.5A
-
12
18
10
320
42
20
ns VGS=10V
RG=6Ө
Turn-off Delay Time
Fall Time
-
Td(off)
Tf
RL=12Ө
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
Ciss
Coss
Crss
VGS=0V
VDS=30V
f=1.0MHz
pF
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
Unit
Test Conditions
IS=2.5A, VGS=0V
-
-
1.2
V
VSD
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
3. Surface mounted on FR4 board, t Љ10sec.
WEITRON
http://www.weitron.com.tw
2/5
04-Feb-10
