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WTK9410

型号:

WTK9410

描述:

表面贴装N沟道增强型MOSFET[ Surface Mount N-Channel Enhancement Mode MOSFET ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

6 页

PDF大小:

878 K

WTK9410  
Surface Mount N-Channel  
Enhancement Mode MOSFET  
DRAIN CURRENT  
18 AMPERES  
DRAIN SOURCE VOLTAGE  
30 VOLTAGE  
P b  
Lead(Pb)-Free  
Features:  
* Simple Drive Requirement.  
* Low On-Resistance.  
* Fast Switching.  
* Super high dense cell design for low R  
1
DS(ON)  
R
R
R
<5.5mΩ@V =10V  
DS(ON)  
DS(ON)  
DS(ON)  
GS  
<6.2mΩ@V =4.5V  
GS  
SOP-8  
<8.0mΩ@V =2.5V  
GS  
* Rugged and Reliable.  
* SOP-8 Package.  
Maximum Ratings(T =25°C Unless Otherwise Specified)  
A
Rating  
Symbol  
Value  
30  
Unite  
V
DS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
12  
V
A
GS  
Continuous Drain Current(1) (T =25°C)  
18  
15  
A
I
D
(T =70°C)  
A
Pulsed Drain Current(2)  
I
80  
A
DM  
Power Dissipation(T =25°C)  
PD  
2.5  
W
A
Maximax Junction-to-Ambient(1)  
Junction Temperature Range  
Storage Temperature Range  
R
50  
°C/W  
°C  
θJA  
T
+150  
J
T
-55 to +150  
°C  
stg  
Device Marking  
WTK9410 = 9410SC  
WEITRON  
http://www.weitron.com.tw  
1/6  
12-Mar-07  
WTK9410  
Electrical Characteristics (T =25°C Unless otherwise noted)  
A
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
(2)  
Static  
Drain-Source Breakdown Voltage  
V =0V, I =250µA  
V
30  
-
-
-
-
V
V
(BR)DSS  
GS  
D
Gate-Source Threshold Voltage  
V =V , I =250µA  
V
1.2  
GS(th)  
DS GS  
D
Gate-Source Leakage Current  
V =0V, V = 12V  
I
-
-
-
-
100  
nA  
µA  
GSS  
DS  
GS  
Drain-Source Leakage Current  
@Tj=25C, V =30V,V =0V  
1
25  
I
DS  
GS  
DSS  
@Tj=70C, V =24V,V =0V  
DS  
GS  
Drain-Source On-Resistance3  
VGS=10V, ID=18A  
VGS=4.5V, ID=12A  
5.5  
6.2  
8.0  
r
-
-
-
mΩ  
S
DS(on)  
VGS=2.5V, ID=6A  
Forward Transconductance  
VDS=10V, ID=12A  
gfs  
47  
-
(3)  
Dynamic  
Input Capacitance  
Ci  
-
-
-
5080  
660  
8100  
ss  
V
=25V,V =0V, f=1.0MHZ  
DS GS  
Output Capacitance  
=25V,V =0V, f=1.0MHZ  
C
oss  
pF  
-
-
V
DS  
GS  
Reverse Transfer Capacitance  
=25V,V =0V, f=1.0MHZ  
C
rss  
400  
V
DS  
GS  
WEITRON  
2/6  
12-Mar-07  
http://www.weitron.com.tw  
WTK9410  
Electrical Characteristics (T =25°C Unless otherwise noted)  
A
Min  
Typ  
Max  
Characteristic  
Symbol  
Unit  
Switching  
Turn-On Delay Time  
-
T
-
16  
d(on)  
V =15V, V =10V, I =1A, R =3.3Ω, R =15Ω  
DS  
GS  
D
G
D
Rise Time  
T
r
12  
96  
30  
-
-
-
-
-
-
V =15V, V =10V, I =1A, R =3.3Ω, R =15Ω  
DS  
GS  
D
G
D
nS  
Turn-Off Time  
V =15V, V =10V, I =1A, R =3.3Ω, R =15Ω  
DS  
T
d(off)  
GS  
D
G
D
Fall Time  
T
f
V =15V, V =10V, I =1A, R =3.3Ω, R =15Ω  
DS  
GS  
D
G
D
Total Gate Charge3  
V =24V, V =4.5V, I =18A  
Qg  
59  
10  
23  
95  
-
-
-
-
DS  
GS  
D
Gate-Source Charge  
V =24V, V =4.5V, I =18A  
Qgs  
Qgd  
nC  
DS  
GS  
D
Gate-Drain Charge  
V =24V, V =4.5V, I =18A  
-
DS  
GS  
D
Source-Drain Diode Characteristics  
Forward On Voltage3  
-
-
-
-
1.2  
V
V
SD  
V =0V,I =18A  
GS  
S
Reverse Recovery Time3  
V =0V,I =18A, dl/dt=100A/μs  
43  
39  
-
-
nS  
nC  
T
rr  
GS  
S
Reverse Recovery Charge  
V =0V,I =18A, dl/dt=100A/μs  
Q
rr  
GS  
S
Note: 1. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.  
2. Pulse width limited by Max. junction temperature.  
3. Pulse width ≤ 300us, duty cycle ≤ 2%.  
WEITRON  
http://www.weitron.com.tw  
3/6  
12-Mar-07  
WTK9410  
WEITRON  
WEITRON  
4/6  
12-Mar-07  
http://www.weitron.com.tw  
WTK9410  
WEITRON  
WEITRON  
http://www.weitron.com.tw  
5/6  
12-Mar-07  
WTK9410  
WEITRON  
SOP-8 Package Outline Dimensions  
Unit:mm  
1
θ
L
E1  
7(4X)  
D
(4X)  
7
e
B
eB  
MILLIMETERS  
SYMBOLS  
MIN  
1.35  
0.10  
0.35  
0.18  
4.69  
3.56  
5.70  
MAX  
1.75  
0.20  
0.45  
0.23  
4.98  
4.06  
6.30  
A
A1  
B
C
D
E1  
eB  
e
1.27BSC  
0.60  
0°  
0.80  
8°  
L
θ
WEITRON  
http://www.weitron.com.tw  
6/6  
12-Mar-07  
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