WTK6680
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
VGS=0, ID=250uA
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
30
-
-
V
BVDSS
ϦBVDSS /ϦTj
-
1.0
-
0.02
-
-
V/к
V
Reference to 25к, ID=1mA
3.0
VGS(th)
gfs
VDS=VGS, ID=250uA
Forward Transconductance
30
-
-
S
V
DS=15V, ID=11.5A
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
±100
nA
uA
uA
IGSS
VGS= ±20V
-
-
1
25
11
18
-
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=11.5A
VGS=4.5V, ID=9.5A
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
-
Static Drain-Source On-Resistance2
mꢀ
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
16.8
4.2
8
Qg
Qgs
Qgd
Td(on)
Tr
ID=11.5A
VDS=15V
VGS=5V
nC
-
-
-
-
-
8.9
7.3
25.6
18.6
1450
285
180
-
VDS=15V
ID=1A
-
-
ns
VGS=10V
Turn-off Delay Time
Fall Time
-
-
Td(off)
Tf
RG=5.5ꢀ
RD=10ꢀ
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
Ciss
Coss
Crss
VGS=0V
pF
-
-
VDS=25V
f=1.0MHz
-
-
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
Max.
1.3
Unit
V
Test Conditions
-
-
-
VSD
IS=3.5A, VGS=0V, Tj=25к
Continuous Source Current (Body Diode)
-
1.92
A
IS
VD=VG=0V, VS=1.3V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125к/W when mounted on Min. copper pad.
WEITRON
http://www.weitron.com.tw
2/6
15-Aug-08
