WTK4435
Electrical Characteristics (T =25°C Unless otherwise noted)
A
Min
Typ
Max
Characteristic
Symbol
Unit
Static
Drain-Source Breakdown Voltage
GS
V
(BR)DSS
-
-
-
-
V
V
-30
-1.0
-
V
=0V, I =-250 uA
D
Gate-Source Threshold Voltage
=V , I =-250 uA
V
-3.0
GS (th)
V
D
DS GS
Gate-Source Leakage Current
I
GSS
100
nA
+
=0V,V = 20V
GS
V
DS
Zero Gate Voltage Drain Current
I
V
V
=-30V,V =0V
-1
-5
-
μA
-
DSS
DS
GS
=-24V,V =0V
DS
GS
Drain-Source On-Resistance
RDS (on)
-
-
-
-
V
GS
V
GS
=-10V, I =-8A
mΩ
S
D
20
35
=-4.5V, I =-5A
D
Forward Transconductance
=-10V , I =-8A
g
fs
-
20
-
V
DS
D
Dynamic
Input Capacitance
C
iss
2800
1400
350
-
-
-
-
V
=-15V,V =0V, f=1MHZ
DS
GS
Output Capacitance
=-15V,V =0V, f=1MHZ
C
oss
F
P
V
DS
GS
Reverse Transfer Capacitance
=-15V,V =0V, f=1MHZ
C
rss
-
-
V
DS
GS
Switching
(2)
urn-On Delay Time
T
t
-
-
-
-
-
-
-
nS
nS
d(on)
30
20
= -15V, I = -1A, V = -10V, R = 6Ω, RD = 15Ω
V
DS
D
GS
G
Rise Time
= -15V, I = -1A, V = -10V, R = 6Ω, RD = 15Ω
t
r
V
DS
D
GS
G
urn-O Time
T
V
t
nS
nS
120
80
)
-
-
= -15V, I = -1A, V = -10V, R = 6Ω, RD = 15Ω
DS
D
GS
G
Fall Time
= -15V, I = -1A, V = -10V, R = 6Ω, RD = 15Ω
t
f
V
DS
D
GS
G
(2)
otal Gate Charge
T
-
-
-
Qg
47
nc
=-15V, I =-4.6A,V =-10V
V
GS
DS
D
ate-Source Charge
G
V
Qgs
Qgd
9.5
8
nc
nc
-
-
=-15V, I =-4.6A,V =-10V
GS
DS
D
ate-Drain Charge
G
V
=-15V, I =-4.6A,V =-10V
GS
DS
D
(2)
Diode Forward Voltage
Drain-Source
=0V, I =-2.1A
-
-
-0.75
-
-1.2
-2.1
VSD
IS
V
A
V
GS
S
Continuous Source Current(Body Diode)
VD=VG=0V, VS=-1.2V
Pulsed Source Current(Body Diode)(1)
-
-
-50
ISM
A
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
WEITRON
http://www.weitron.com.tw
2/6
03-May-07
