WTK4501
P-Channel Electrical Characteristics (T = 25°C Unless otherwise noted)
A
Characteristic
Symbol Min
Typ
Max
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
VGS=0,ID=-250μA
Drain-Source Leakage Current
Tj=25°C, VDS=-30V, VGS=0V
Tj=70°C, VDS=-24V, VGS=0V
BVDSS
IDSS
-30
-
-
V
-
-
-
-
-1
-25
μA
nA
Gate-Source Leakage current
VGS= 16V
IGSS
-
-
100
ON Characteristics
Gate-Source Threshold Voltage
VDS=VGS, ID=-250μA
VGS(Th)
-1.0
-
-3.0
V
Drain-Source On-Resistance2
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
-
-
-
-
50
90
RDS(on)
mΩ
S
Forward Transconductance
VDS=-10V,ID=-5.3A
g
fs
-
8.5
-
Dymamic Characteristics
Input Capacitance
VGS=0V, VDS=-15V, f=1.0MHz
Output Capacitance
VGS=0V, VDS=-15V, f=1.0MHz
-
-
-
790
440
120
-
-
-
Ciss
Coss
pF
Reverse Transfer Capacitance
VGS=0V, VDS=-15V, f=1.0MHz
Crss
Switching Characteristics
Turn-on Delay Time2
VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω
-
-
-
-
-
-
-
12
20
45
27
20
3.5
2
-
-
-
-
-
-
-
td(on)
tr
td(oꢀ)
tf
Rise Time
VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω
ns
Turn-oꢀ Delay Time
VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω
Fall Time
VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω
Total Gate Charge2
VDS=-15V, VGS=-10V, ID=-5.3A
Qg
Gate-Source Charge
VDS=-15V, VGS=-10V, ID=-5.3A
nC
Qgs
Qgd
Gate-Source Change
VDS=-15V, VGS=-10V, ID=-5.3A
Source-Drain Diode Characteristics
Forward On Voltage2
IS=-2.6A, VGS=0V
Continuous Source Current(Body Diode)
VD=VG=0V, VS=-1.2V
VSD
IS
-
-
-
-
-1.2
V
A
-1.67
Note: 1. Pulse width limited by Max. junction temperature.
2. Pulse width ≤ 300us, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, 135°C/W when mounted on Min. copper pad.
WEITRON
http:www.weitron.com.tw
3/10
07-May-07