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WTK4501

型号:

WTK4501

描述:

N和P沟道增强型功率MOSFET[ N AND P-Channel Enhancement Mode POWER MOSFET ]

品牌:

WEITRON[ WEITRON TECHNOLOGY ]

页数:

10 页

PDF大小:

2112 K

WTK4501  
N-CHANNEL  
DRAIN SOURCE VOLTAGE  
30 VOLTAGE  
7,8 DRAIN  
N AND P-Channel Enhancement  
Mode POWER MOSFET  
P b  
Lead(Pb)-Free  
DRAIN CURRENT  
7 AMPERES  
2 GATE  
P-CHANNEL  
DRAIN SOURCE VOLTAGE  
-30 VOLTAGE  
1 SOURCE  
5,6 DRAIN  
Features:  
* Low Gate change  
* Low On-Resistance  
DRAIN CURRENT  
-5.3 AMPERES  
N-CH R  
P-CH R  
<42mΩ@V = 4.5V  
<90mΩ@V = -4.5V  
DS(ON)  
DS(ON)  
GS  
GS  
* SOP-8 Package  
4 GATE  
3 SOURCE  
1
SOP-8  
Maximum Ratings (T =25˚C Unless Otherwise Specified)  
A
Value  
Unit  
Rating  
Symbol  
N-Channl  
P-Channl  
-30  
V
Drain-Source Voltage  
30  
DS  
V
V
GS  
±20  
7
±±1  
-5.3  
-4.7  
Gate-Source Voltage  
V
A
Continuous Drain Current3  
T =25˚C  
T =75˚C  
A
A
I
D
5.8  
Pulsed Drain Current±  
I
20  
-20  
DM  
A
W
T =25˚C  
A
P
Total Power Dissipation  
Maximum Junction-ambient3  
2.0  
D
R
12.5  
+±50  
˚C/W  
˚C  
θJA  
T
Operating Junction Temperature Range  
Storage Temperature Range  
J
T
-55~+±50  
stg  
˚C  
Device Marking  
WTK450±=450±SS  
WEITRON  
http:www.weitron.com.tw  
07-May-07  
1/10  
WTK4501  
N-Channel Electrical Characteristics (T = 25°C Unless otherwise noted)  
A
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
OFF Characteristics  
Drain-Source Breakdown Voltage  
VGS=0,ID=250μA  
Drain-Source Leakage Current  
Tj=25°C, VDS=30V, VGS=0V  
Tj=70°C, VDS=24V, VGS=0V  
BVDSS  
IDSS  
30  
-
-
V
-
-
-
-
1
25  
μA  
nA  
Gate-Source Leakage current  
VGS= 20V  
IGSS  
-
-
100  
ON Characteristics  
Gate-Source Threshold Voltage  
VDS=VGS, ID=250μA  
VGS(Th)  
1.0  
-
3.0  
V
Drain-Source On-Resistance  
VGS=10V,ID=7A  
VGS=4.5V,ID=5A  
28  
42  
-
-
-
-
RDS(on)  
mΩ  
S
Forward Transconductance  
VDS=10V,ID=7A  
g
-
-
fs  
13  
Dymamic Characteristics  
Input Capacitance  
VGS=0V, VDS=20V, f=1.0MHz  
Output Capacitance  
VGS=0V, VDS=20V, f=1.0MHz  
-
-
-
645  
150  
95  
-
-
-
Ciss  
Coss  
pF  
Reverse Transfer Capacitance  
VGS=0V, VDS=20V, f=1.0MHz  
Crss  
Switching Characteristics  
Turn-on Delay Time2  
VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω  
-
-
-
-
-
-
-
6
-
-
-
-
-
-
-
td(on)  
tr  
td(off)  
tf  
Rise Time  
5.2  
18.8  
4.4  
8.4  
2.1  
4.7  
VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω  
ns  
Turn-off Delay Time  
VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω  
Fall Time  
VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω  
Total Gate Charge2  
Qg  
VDS=24V,VGS=4.5V,ID=7A  
Gate-Source Charge  
VDS=24V,VGS=4.5V,ID=7A  
nC  
Qgs  
Qgd  
Gate-Source Change  
VDS=24V,VGS=4.5V,ID=7A  
Source-Drain Diode Characteristics  
Forward On Voltage2  
IS=7A, VGS=0V  
Continuous Source Current(Body diode)  
VD=VG=0V, VS=1.2V  
VSD  
IS  
-
-
-
-
1.2  
V
A
1.67  
Note: 1. Pulse width limited by Max. junction temperature.  
2. Pulse width ≤ 300us, duty cycle ≤ 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board, 135°C/W when mounted on Min. copper pad.  
WEITRON  
http:www.weitron.com.tw  
2/10  
07-May-07  
WTK4501  
P-Channel Electrical Characteristics (T = 25°C Unless otherwise noted)  
A
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
OFF Characteristics  
Drain-Source Breakdown Voltage  
VGS=0,ID=-250μA  
Drain-Source Leakage Current  
Tj=25°C, VDS=-30V, VGS=0V  
Tj=70°C, VDS=-24V, VGS=0V  
BVDSS  
IDSS  
-30  
-
-
V
-
-
-
-
-1  
-25  
μA  
nA  
Gate-Source Leakage current  
VGS= 16V  
IGSS  
-
-
100  
ON Characteristics  
Gate-Source Threshold Voltage  
VDS=VGS, ID=-250μA  
VGS(Th)  
-1.0  
-
-3.0  
V
Drain-Source On-Resistance2  
VGS=-10V, ID=-5.3A  
VGS=-4.5V, ID=-4.2A  
-
-
-
-
50  
90  
RDS(on)  
mΩ  
S
Forward Transconductance  
VDS=-10V,ID=-5.3A  
g
fs  
-
8.5  
-
Dymamic Characteristics  
Input Capacitance  
VGS=0V, VDS=-15V, f=1.0MHz  
Output Capacitance  
VGS=0V, VDS=-15V, f=1.0MHz  
-
-
-
790  
440  
120  
-
-
-
Ciss  
Coss  
pF  
Reverse Transfer Capacitance  
VGS=0V, VDS=-15V, f=1.0MHz  
Crss  
Switching Characteristics  
Turn-on Delay Time2  
VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω  
-
-
-
-
-
-
-
12  
20  
45  
27  
20  
3.5  
2
-
-
-
-
-
-
-
td(on)  
tr  
td(oꢀ)  
tf  
Rise Time  
VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω  
ns  
Turn-oꢀ Delay Time  
VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω  
Fall Time  
VDS=-15V, VGS=-10V, ID=-1A, RG=6Ω, RD=15Ω  
Total Gate Charge2  
VDS=-15V, VGS=-10V, ID=-5.3A  
Qg  
Gate-Source Charge  
VDS=-15V, VGS=-10V, ID=-5.3A  
nC  
Qgs  
Qgd  
Gate-Source Change  
VDS=-15V, VGS=-10V, ID=-5.3A  
Source-Drain Diode Characteristics  
Forward On Voltage2  
IS=-2.6A, VGS=0V  
Continuous Source Current(Body Diode)  
VD=VG=0V, VS=-1.2V  
VSD  
IS  
-
-
-
-
-1.2  
V
A
-1.67  
Note: 1. Pulse width limited by Max. junction temperature.  
2. Pulse width ≤ 300us, duty cycle ≤ 2%.  
3. Surface mounted on 1 in2 copper pad of FR4 board, 135°C/W when mounted on Min. copper pad.  
WEITRON  
http:www.weitron.com.tw  
3/10  
07-May-07  
WTK4501  
Characteristics Curve N-Channel  
WEITRON  
http://www.weitron.com.tw  
4/10  
07-May-07  
WTK4501  
N-Channel  
WEITRON  
http://www.weitron.com.tw  
5/10  
07-May-07  
WTK4501  
N-Channel  
WEITRON  
http://www.weitron.com.tw  
6/10  
07-May-07  
WTK4501  
Characteristics Curve P-Channel  
WEITRON  
http://www.weitron.com.tw  
7/10  
07-May-07  
WTK4501  
P-Channel  
WEITRON  
http://www.weitron.com.tw  
8/10  
07-May-07  
WTK4501  
P-Channel  
WEITRON  
http://www.weitron.com.tw  
9/10  
07-May-07  
WTK4501  
SOP-8 Package Outline Dimensions  
Unit:mm  
1
θ
L
E1  
D
7(4X)  
(4X)  
7
e
B
eB  
MILLIMETERS  
SYMBOLS  
MIN  
1.35  
0.10  
0.35  
0.18  
4.69  
3.56  
5.70  
MAX  
1.75  
0.20  
0.45  
0.23  
4.98  
4.06  
6.30  
A
A1  
B
C
D
E1  
eB  
e
1.27 BSC  
0.60  
0˚  
0.80  
8˚  
L
θ
WEITRON  
http://www.weitron.com.tw  
10/10  
07-May-07  
厂商 型号 描述 页数 下载

WEITRON

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