WTK4224
Electrical Characteristics(Tj = 25ć Unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Unit
Test Conditions
VGS=0, ID=250uA
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
30
-
0.03
-
-
V
BVDSS
ϦBVDSS /ϦTj
V/к
V
-
1.0
-
-
Reference to 25к, ID=1mA
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VGS= ̈́20V
3.0
VGS(th)
gfs
Forward Transconductance
16
-
-
S
̈́100
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25к)
-
nA
uA
uA
IGSS
-
-
1
25
14
20
15
-
VDS=30V, VGS=0
VDS=24V, VGS=0
VGS=10V, ID=10A
VGS=4.5V, ID=7A
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
-
Static Drain-Source On-Resistance2
mӨ
RDS(ON)
-
-
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
-
23
6
Qg
Qgs
Qgd
Td(on)
Tr
ID=10A
VDS=24V
VGS=4.5V
nC
-
-
14
12
8
-
-
-
VDS=15V
ID=1A
-
-
ns VGS=10V
RG=3.3Ө
Turn-off Delay Time
Fall Time
-
34
16
-
Td(off)
Tf
RD=15Ө
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
-
1910 3070
Ciss
Coss
Crss
Rg
VGS=0V
VDS=25V
f=1.0MHz
pF
-
400
280
0.9
-
-
-
-
Ө
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol Min.
Typ.
-
Max.
Unit
V
Test Conditions
-
1.2
VSD
IS=1.7A, VGS=0V, Tj=25к
Reverse Recovery Time2
Trr
-
-
30
24
-
-
ns
IS=10A, VGS=0V
dI/dt=100A/ꢀs
Reverse Recovery Charge
Qrr
nC
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 135к/W when mounted on Min. copper pad.
WEITRON
http://www.weitron.com.tw
2/5
07-Apr-10
