IXZR18N50 & IXZR18N50A/B
ZꢀMOSꢁRFꢁPowerꢁMOSFETꢁ
NꢁChannelꢀEnhancementꢀModeꢀSwitchꢀModeꢀRFꢀMOSFETꢀ
LowꢀCapacitanceꢀZꢁMOSTMꢀMOSFETꢀProcessꢀ
OptimizedꢀforꢀRFꢀOperationꢀ
VDSS
ꢀ
=ꢁ 500ꢁVꢁ
IdealꢀforꢀClassꢀC,ꢀD,ꢀ&ꢀEꢀApplicationsꢀ
ID25ꢀ
=ꢁ
19ꢁAꢁ
RDS(on)ꢀ ≤ꢁ
PDCꢀ
0.37ꢁꢀꢁ
Symbolꢁ
VDSS
DGRꢀ
VGS
VGSM
ID25
IDM
IAR
TestꢁConditionsꢁ
TJꢀ=ꢀ25°Cꢀtoꢀ150°Cꢀꢀ
TJꢀ=ꢀ25°Cꢀtoꢀ150°C;ꢀRGSꢀ=ꢀ1ꢀMꢀꢀꢀ
Continuousꢀ
MaximumꢁRatingsꢁꢁ
=ꢁ 350ꢁWꢁ
ꢀ
500ꢀꢀ
500ꢀꢀ
Vꢀ
V
V
ꢀ
±20ꢀꢀ
±30ꢀꢀ
19ꢀꢀ
Vꢀ
Vꢀ
Aꢀ
Aꢀ
Aꢀ
Transientꢀ
ꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
ꢀ
Tcꢀ=ꢀ25°C,ꢀpulseꢀwidthꢀlimitedꢀbyꢀTJMꢀꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
ꢀ
95ꢀꢀ
ꢀ
19ꢀꢀ
Tcꢀ=ꢀ25°Cꢀꢀ
EAR
ꢁ
ꢀ
TBDꢀꢀ mJꢀ
5ꢀꢀꢀ V/nsꢀ
ISꢀ≤ꢁIDM,ꢀdi/dtꢀ≤ꢁ100A/ꢂs,ꢀVDDꢀ≤ꢀVDSS,ꢀꢀ
Tjꢀ≤ꢀ150°C,ꢀRGꢀ=ꢀ0.2ꢀꢀꢀ
dv/dtꢁꢁ
ISꢀ=ꢀ0ꢀ
>200ꢀꢀ V/nsꢀ
ꢀ
PDC
PDHS
PDAMB
ꢀ
350ꢀꢀ
TBDꢀꢀ
3.0ꢀ
Wꢀ
Wꢀ
Wꢀ
Tcꢀ=ꢀ25°C,ꢀDerateꢀ4.4W/°Cꢀaboveꢀ25°Cꢀ
ꢀ
Tcꢀ=ꢀ25°Cꢀ
ꢀ
ꢀ
ꢀ
RthJC
ꢀ
TBDꢀ C/Wꢀ
TBDꢀ C/Wꢀ
RthJHS
ꢀ
Featuresꢁ
•ꢁ IsolatedꢀSubstrateꢀ
Symbolꢁ TestꢁConditions
CharacteristicꢁValues
−ꢁ highꢀisolationꢀvoltageꢀ(>2500V)ꢀ
−ꢁ excellentꢀthermalꢀtransferꢀ
(
TJꢀ=ꢀ25°Cꢀunlessꢀotherwiseꢀspecified
)
ꢀꢀꢀ
ꢀ
min.ꢁ
typ.ꢁ max.ꢁ ꢀ
VGSꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ4ꢀmaꢀ
VDSS
VGS(th)
IGSS
DSSꢀ
ꢀ
500ꢀꢀ
ꢀ
ꢀ
ꢀ
Vꢀ
Vꢀ
−ꢁ Increasedꢀtemperatureꢀandꢀpowerꢀ
cyclingꢀcapabilityꢀꢀꢀ
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢂΑꢀ
VGSꢀ=ꢀ±20ꢀVDC,ꢀVDSꢀ=ꢀ0ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
4.6ꢀ
•ꢁ IXYSꢀadvancedꢀZꢁMOSꢀprocessꢀ
•ꢁ Lowꢀgateꢀchargeꢀandꢀcapacitancesꢀ
−ꢁ easierꢀtoꢀdriveꢀ
ꢀ
ꢀ
ꢀ
±100ꢀꢀ
nAꢀ
VDSꢀ=ꢀ0.8VDSSꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀTJꢀ=ꢀ25Cꢀ
VGS=0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀTJꢀ
=125Cꢀ
I
50ꢀ
1ꢀ
ꢂAꢀ
mAꢀ
−ꢁ fasterꢀswitchingꢀ
•ꢁ LowꢀRDS(on)
ꢀ
•ꢁ Veryꢀlowꢀinsertionꢀinductanceꢀ(<2nH)ꢀ
VGSꢀ=ꢀ20ꢀV,ꢀIDꢀ=ꢀ0.5ID25
Pulseꢀtest,ꢀtꢀ≤ꢀ300ꢂS,ꢀdutyꢀcycleꢀdꢀ≤ꢀ2%ꢀꢀ
ꢀ
RDS(on)
gfsꢀ
ꢀ
0.37ꢀ
6.7ꢀ
ꢀ
ꢀ
ꢀꢀ
•ꢁ Noꢀberylliumꢀoxideꢀ(BeO)ꢀorꢀotherꢀ
hazardousꢀmaterialsꢀꢀ
VDSꢀ=ꢀ50ꢀV,ꢀIDꢀ=ꢀ0.5ID25,ꢀpulseꢀ
testꢀ
ꢀ
Sꢀ
ꢀ
Advantagesꢁ
ꢀ
ꢀ
ꢀ
TJꢀ
ꢁ55ꢀ
ꢀ
175ꢀꢀ
ꢀ
+175ꢀꢀ
°Cꢀꢀꢀ
•ꢁ OptimizedꢀforꢀRFꢀandꢀhighꢀspeedꢀ
•ꢁ Easyꢀtoꢀmount—noꢀinsulatorsꢀneededꢀ
•ꢁ Highꢀpowerꢀdensityꢀ
TJMꢀ
ꢀ
ꢀ
ꢁ55ꢀ
ꢀ
ꢀ
+ꢀ175ꢀ
ꢀ
°Cꢀꢀꢀꢀ
°Cꢀꢀꢀꢀꢀ
°Cꢀꢀꢀꢀꢀꢀ
Tstg
ꢀ
1.6mm(0.063ꢀin)ꢀfromꢀcaseꢀforꢀ10ꢀ
sꢀ
TLꢀ
300ꢀꢀ
ꢀ
Weightꢀ
ꢀ
3.5ꢀꢀ
ꢀ
gꢀ
